BCX54 [SECOS]
Plastic-Encapsulate Transistors; 塑料封装晶体管
| 型号： | BCX54 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Plastic-Encapsulate Transistors |
| 文件： | 总1页 (文件大小：1207K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BCX54
NPN Transistors
Elektronische Bauelemente
Plastic-Encapsulate Transistors
RoHS Compliant Product
1
2
3
SOT-89
1.BASE
4.4~4.6
2.COLLECTOR
3.EMITTER
1.4~1.8
1.4~1.6
Features
0.36~0.56
Power dissipation
PCM:
oC
0.5
W (Tamb=25 )
0.32~0.52
Collector current
0.35~0.44
1.5Ref.
2.9~3.1
ICM
Collector-base voltage
V(BR)CBO
:
1
A
V
:
45
Dimensision in Millimeter
Operating and storage junction temperature range
oC oC
TJ, Tstg: -55 to +150
ELECTRICAL CHARACTERISTICS (Tamb=25o
unless otherwise specified)
C
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Test
conditions
MIN
45
45
5
MAX
UNIT
V
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cut-off current
Ic=100µA , IE=0
IC= 1mA , IB=0
IE=10µA, IC=0
VCB=30V, IE=0
VEB=5V, IC=0
V
V
0.1
0.1
µA
µA
Emitter cut-off current
IEBO
63
63
100
250
160
250
DC current gain
BCX54
BCX54-10
BCX54-16
hFE (1)
VCE=2V, IC= 150mA
hFE(2)
hFE(3)
VCE=2V, IC= 5mA
40
25
VCE=2V, IC= 500mA
Collector-emitter saturation voltage
VCE(sat)
VBE(ON)
IC=500 mA, IB= 50mA
IC= 500 mA, VCE=2V
0.5
1
V
V
Base-emitter
voltage
VCE= 10V, IC= 50mA
f = 100MHz
Transition frequency
DEVICE MARKING
130
MHz
f T
BCX54=BA BCX54-10=BC
BCX54-16=BD
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 1
相关型号：
BCX54-10
NPN Silicon AF Transistors (For AF driver and output stages High collector current)
INFINEON
©2020 ICPDF网 联系我们和版权申明