D10JB60 [SECOS]

50V ~ 1000V, 10A Glass Passivated Bridge Rectifiers;
D10JB60
型号: D10JB60
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

50V ~ 1000V, 10A Glass Passivated Bridge Rectifiers

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中文:  中文翻译
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D10JB05 ~ D10JB100  
50V ~ 1000V, 10A  
Glass Passivated Bridge Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
FEATURES  
JB  
Io : 10A  
VRRM : 50~1000V  
Glass passivated chip  
High surge forward current capability  
APPLICATIONS  
General purpose 1 phase Bridge  
rectifier applications  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
15.2  
4.5  
A
B
C
D
24.7  
11.4  
10.0  
7.3  
25.3  
12.0  
10.6  
7.7  
H
I
14.6  
3.9  
J
K
2.9  
3.9  
3.1  
3.4  
6.0  
2.6  
0.6  
E
F
1.2  
1.35  
0.9  
1.4  
1.55  
1.1  
L
M
N
5.4  
2.0  
0.4  
G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Part Number  
Parameter  
Symbol  
Unit  
D10  
D10  
D10  
D10  
D10  
D10  
D10  
JB05  
JB10  
JB20  
JB40  
JB60  
JB80  
JB100  
Maximum Recurrent Peak Reverse Voltage  
With heatsink  
VRRM  
50  
100  
200  
400  
600  
800  
1000  
V
10  
Average Rectified Output  
TC =95°C  
Current @ 60Hz sine  
wave, R-load  
IO  
A
Without heatsink  
3.2  
TA =25°C  
Non-repetitive Surge Forward Current @ 60Hz  
sine wave, 1 cycle, TJ=25°C  
Current Squared Time 1  
IFSM  
I2t  
150  
93  
2
A
A2S  
KV  
Dielectric Strength@ Terminals to case,  
AC 1 minute  
VDIS  
Mounting Torque@ Recommend torque:  
Tor  
VFM  
IRRM  
RθJA  
8
kgcm  
V
5kgcm  
Peak Forward Voltage@ IFM=5A, pulse  
measurement, rating of per diode  
1.1  
10  
28  
2.8  
Peak Reverse Current@ VRM=VRRM , Pulse  
measurement, Rating of per diode  
µA  
Thermal Resistance from Junction to  
Ambient@ without heatsink  
°C / W  
Thermal Resistance from Junction to  
Case@ with heatsink  
RθJC  
°C / W  
°C  
Junction and Storage Temperature Range  
TJ, TSTG  
150, -55~+150  
Notes  
1. 1mst8.3ms, TJ=25°C, rating of per diode.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
22-Apr-2016 Rev. A  
Page 1 of 2  
D10JB05 ~ D10JB100  
50V ~ 1000V, 10A  
Glass Passivated Bridge Rectifiers  
Elektronische Bauelemente  
RATINGS AND CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
22-Apr-2016 Rev. A  
Page 2 of 2  

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