DTA143ZUA [SECOS]

PNP Digital Transistors (Built-in Resistors); PNP数字晶体管(内置电阻)
DTA143ZUA
型号: DTA143ZUA
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

PNP Digital Transistors (Built-in Resistors)
PNP数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:206K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTA143ZE/DTA143ZUA/DTA143ZCA  
DTA143ZKA/DTA143ZSA  
Elektronische Bauelemente  
PNP Digital Transistors (Built-in Resistors)  
FEATURES  
* Built-in bias resistors enable the configuration of  
an inverter circuit without connecting input resistors  
(see equivalent circuit).  
* Only the on/off confitions need to be set for operation,  
making device design easy.  
* The bias resistors consis of thin-film resistors with  
compete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
PIN CONNENCTIONS AND MARKING  
DTA143ZUA  
DTA143ZE  
SOT-323  
Abbreviated symbol: 113  
SOT-523  
Abbreviated symbol: E13  
DTA143ZKA  
DTA143ZCA  
SOT-23-3L  
Abbreviated symbol: E13  
SOT-23  
Abbreviated symbol: E13  
DTA143ZSA  
TO-92S  
Any changing of specification will not be informed indivlidua  
http://www.SeCoSGmbH.com  
01-Jun-2002 Rev. A  
Page 1 of 2  
DTA143ZE/DTA143ZUA/DTA143ZCA  
DTA143ZKA/DTA143ZSA  
Elektronische Bauelemente  
PNP Digital Transistors (Built-in Resistors)  
Absolute maximum ratings(Ta=25)  
Limits (DTA143Z)  
Parameter  
Symbol  
Unit  
E
UA  
KA  
CA  
SA  
VCC  
VIN  
-50  
V
V
Supply voltage  
Input voltage  
-30~5  
-100  
IO  
mA  
Output current  
IC(MAX)  
Pd  
-100  
150  
200  
300  
mW  
Power dissipation  
Junction temperature  
Storage temperature  
Tj  
150  
Tstg  
-55~150  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
-0.5  
VCC=-5V ,IO=-100µA  
VO=-0.3V ,IO=-5 mA  
IO/II=-5mA/-0.25mA  
VI=-5V  
Input voltage  
V
-1.3  
Output voltage  
Input current  
-0.3  
-1.8  
-0.5  
V
mA  
µA  
Output current  
IO(off)  
GI  
VCC=-50V ,VI=0  
VO=-5V ,IO=-10mA  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
80  
3.29  
8
R1  
4.7  
10  
6.11  
12  
K  
R2/R1  
fT  
250  
MHz  
VO=-10V ,IO=-5mA,f=100MHz  
Typical Characteristics  
Any changing of specification will not be informed individua  
http://www.SeCoSGmbH.com  
01-Jun-2002 Rev. A  
Page 2 of 2  

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