DTC114ECA [SECOS]
Digital Transistors NPN (Built-in Resistors); 数字晶体管NPN （内置电阻）
| 型号： | DTC114ECA |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Digital Transistors NPN (Built-in Resistors) |
| 文件： | 总2页 (文件大小：507K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DTC114EE/DTC114EUA/DTC114EKA
/DTC114ESA/DTC114ECA
Elektronische Bauelemente
Digital Transistors NPN (Built-in Resistors)
FEATURES
* Built-in bias resistors enable the configuration of
an inverter circuit without connecting external
input resistors (see equivalent circuit).
* Only the on/off confitions need to be set for operation
making device design easy.
* The bias resistors consis of thin-filmresistors with
compete isolation to allow negative biasing of the
input. They also have the advantage of almost
completely eliminating parasitic effects.
External dimensions (Units:mm )
SOT-323
SOT-523
SOT-23-3L
SOT-23
TO-92S
Absolute maximum ratings(Ta=25℃)
Limits (DTC114E□)
Parameter
Symbol
Unit
E
UA
CA
50
KA
SA
Supply voltage
Input voltage
VCC
VIN
V
V
-10~40
50
IO
Output current
mA
IC(MAX)
Pd
100
Power dissipation
Junction temperature
Storage temperature
150
200
300
mW
℃
Tj
150
Tstg
-55~150
℃
Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
01-Jun-2002 Rev. A
Page 1 of 2
DTC114EE/DTC114EUA/DTC114EKA
/DTC114ESA/DTC114ECA
Elektronische Bauelemente
Digital Transistors NPN (Built-in Resistors)
Electrical characteristics (Ta=25℃)
Parameter
Symbol
VI(off)
Min.
Typ
Max.
Unit
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=10 mA
IO/II=10mA/0.5mA
VI=5V
0.5
Input voltage
V
VI(on)
VO(on)
II
3
Output voltage
Input current
0.3
0.88
0.5
V
mA
µA
Output current
IO(off)
GI
VCC=50V, VI=0
VO=5V ,IO=5mA
DC current gain
Input resistance
Resistance ratio
Transition frequency
30
7
R1
10
1
13
KΩ
R2/R1
fT
0.8
1.2
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
Typical Characteristics
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individua
01-Jun-2002 Rev. A
Page 2 of 2
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