DTC143ZUA [SECOS]

Digital Transistors (Built-in Resistors); 数字晶体管(内置电阻)
DTC143ZUA
型号: DTC143ZUA
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Digital Transistors (Built-in Resistors)
数字晶体管(内置电阻)

晶体 数字晶体管
文件: 总2页 (文件大小:205K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
DTC143ZE/DTC143ZUA/ DTC143ZKA/  
DTC143ZCA/DTC143ZSA  
Elektronische Bauelemente  
Digital Transistors (Built-in Resistors)  
FEATURES  
* Built-in bias resistors enable the configuration of  
an inverter circuit without connecting input external resistors  
(see equivalent circuit).  
* Only the on/off confitions need to be set for operation,  
making device design easy.  
* The bias resistors consis of thin-film resistors with  
compete isolation to allow negative biasing of the  
input. They also have the advantage of almost  
completely eliminating parasitic effects.  
PIN CONNENCTIONS AND MARKING  
DTC143ZE  
DTC143ZUA  
Abbreviated symbol: E23  
SOT-523  
SOT-323  
Abbreviated symbol: E23  
DTC143ZCA  
DTC143ZKA  
SOT-23-3L  
Abbreviated symbol: E23  
SOT-23  
Abbreviated symbol: E23  
DTC143ZSA  
TO-92S  
Any changing of specification will not be informed individual  
http://www.SeCoSGmbH.com  
01-Jun-2004 Rev. B  
Page 1 of 2  
DTC143ZE/DTC143ZUA/ DTC143ZKA/  
DTC143ZCA/DTC143ZSA  
Elektronische Bauelemente  
Digital Transistors (Built-in Resistors)  
Absolute maximum ratings(Ta=25)  
Limits (DTC143Z)  
Parameter  
Symbol  
Unit  
E
UA  
CA  
KA  
SA  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
IC  
50  
V
V
50  
5
V
Collector current  
100  
200  
150  
-55~150  
mA  
mW  
Collector Power dissipation  
Junction temperature  
PC  
150  
300  
Tj  
Storage temperature  
Tstg  
Electrical characteristics (Ta=25)  
Parameter  
Symbol  
VI(off)  
VI(on)  
VO(on)  
II  
Min.  
Typ  
Max.  
Unit  
Conditions  
0.5  
VCC=5V ,IO=100μA  
VO=0.3V ,IO=5 mA  
IO/II=5mA/0.25mA  
VI=5V  
Input voltage  
V
1.3  
Output voltage  
Input current  
0.1  
0.3  
1.8  
0.5  
V
mA  
μA  
Output current  
DC current gain  
Input resistance  
Resistance ratio  
Transition frequency  
IO(off)  
GI  
VCC=50V ,VI=0  
VO=5V ,IO=10mA  
80  
3.29  
8
R1  
4.7  
10  
6.11  
12  
KΩ  
R2/R1  
fT  
250  
MHz  
VCE=10V ,IE=-5mA,f=100MHz  
Typical Characteristics  
01-Jun-2004 Rev. B  
Page 2 of 2  

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