EMG11_18 [SECOS]
Dual NPN Digital Transistors (Built-in Resistors);
| 型号： | EMG11_18 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Dual NPN Digital Transistors (Built-in Resistors) |
| 文件： | 总1页 (文件大小：73K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
EMG11
Dual NPN Digital Transistors (Built-in Resistors)
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOT-553
ꢀ
Two DTC123JCA Chips in a Package
A
B
MARKING
G11
J
F
D
G
H
E
C
ORDER INFORMATION
Millimeter
Millimeter
REF.
REF.
Min.
1.20
1.50
0.525
1.10
Max.
1.70
1.70
0.60
1.30
Min.
Max.
Part Number
Type
Lead (Pb)-free
Lead (Pb)-free and Halogen-free
A
B
C
D
F
G
H
J
0.09
0.45
0.17
0.10
0.16
0.55
0.27
0.30
EMG11
E
-
0.05
EMG11-C
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
50
Unit
V
Supply Voltage
Input Voltage
Output Current
VCC
Vi
-5~12
100
V
IO
mA
mW
°C
Power Dissipation
PD
150
Junction & Storage Temperature
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Input Turn-on Voltage
Input Cut-off Voltage
Output Voltage
Symbol
Vi(on)
Vi(off)
VO(on)
Ii
Min.
Typ.
Max.
Unit
V
Test Conditions
1.1
-
-
VCC=0.3V, IO=5mA
VCC=5V, IO=100µA
IO=5mA, Ii=0.25mA
Vi=5V
-
-
-
0.5
0.3
3.6
0.5
-
V
-
V
Input Cut-off Current
Output Cut-off Current
DC Current Gain
-
-
-
mA
µA
IO(off)
Gi
-
VCC=50V, Vi=0
80
-
-
VO=5V, IO=10mA
VCE=10V, IC=5mA, f=100MHz
Transition Frequency
Input Resistance
fT
250
2.2
-
-
MHz
R1
-
-
KΩ
Resistance Ratio
R2/R1
17
26
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-Jun-2018 Rev. B
Page 1 of 1
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