KTA1023 [SECOS]
PNP Plastic Encapsulated Transistor;
| 型号： | KTA1023 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | PNP Plastic Encapsulated Transistor 晶体管 |
| 文件： | 总1页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
KTA1023
-0.8A , -120V
PNP Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
TO-92L
FEATURE
G
H
ꢀ
Low collector to emitter saturation voltage VCE(sat)
Audio power amplifier
High Current
.
1Emitter
2Collector
3Base
ꢀ
ꢀ
J
A
D
Millimeter
REF.
Min.
4.70
7.80
13.80
3.70
0.35
0.35
Max.
5.10
8.20
14.20
4.10
0.55
0.45
A
B
C
D
E
F
CLASSIFICATION OF hFE
B
Product-Rank
KTA1023-O
KTA1023-Y
120~240
K
E
G
H
J
1.27 TYP.
Range
80~160
1.28
2.44
0.60
1.58
2.64
0.80
C
F
K
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
-120
-120
V
-5
-0.8
V
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
A
PC
0.9
W
°C
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
Min.
-120
-120
Typ.
Max.
Unit
V
Test Conditions
IC= -10µA, IE=0
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
-
-
-
-
V
IC= -10mA, IB=0
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter cut-off current
-5
-
-
-
V
IE= -1mA, IC=0
-
-0.1
-0.1
240
-1
µA
µA
VCB= -120V, IE=0
VEB= -5V, IC=0
IEBO
-
-
DC Current Gain
hFE
80
-
-
VCE= -5V, IC= -100mA
IC = -0.5A, IB = -50mA
IC = -500mA, VCE= -5V
Collector to Emitter Saturation Voltage
Base-Emitter Voltage
VCE(sat)
VBE
-
V
V
-
-
120
-
-1
Transition Frequency
fT
-
-
MHz VCE= -5V, IC= -100mA
pF VCE= -10V, IE=0, f=1MHz
Collector Output Capacitance
COb
-
40
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Dec-2012 Rev. A
Page 1 of 1
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