KTD1898 [SECOS]

1A , 100V NPN Plastic Encapsulated Transistor; 1A , 100V NPN塑料封装晶体管
KTD1898
型号: KTD1898
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

1A , 100V NPN Plastic Encapsulated Transistor
1A , 100V NPN塑料封装晶体管

晶体 晶体管
文件: 总1页 (文件大小:75K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
KTD1898  
1A , 100V  
NPN Plastic Encapsulated Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
SOT-89  
FEATURES  
Small Flat Package  
General Purpose Application  
4
1
2
3
CLASSIFICATION OF hFE(1)  
B
C
A
E
E
C
Product-Rank  
KTD1898-O  
70~140  
ZO  
KTD1898-Y  
KTD1898-GR  
200~400  
ZG  
Range  
120~240  
ZY  
B
D
K
Marking  
F
G
H
Collector  
J
L
PACKAGE INFORMATION  
2
Millimeter  
Millimeter  
REF.  
REF.  
Package  
MPQ  
Leader Size  
Min.  
Max.  
4.60  
4.25  
1.60  
2.60  
Min.  
Max.  
A
B
C
D
4.40  
3.94  
1.40  
2.25  
G
H
J
0.40  
0.58  
1
Base  
1.50 TYP  
3.00 TYP  
SOT-89  
1K  
7 inch  
K
0.32  
0.52  
E
F
1.50  
0.89  
1.85  
1.20  
L
0.35  
0.44  
3
Emitter  
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)  
Parameter  
Collector-Base Voltage  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Ratings  
Unit  
V
100  
Collector-Emitter Voltage  
80  
V
Emitter-Base Voltage  
5
V
Collector Current-Continuous  
Collector Power Dissipation  
Maximum Junction to Ambient  
Junction & Storage Temperature  
1
500  
A
PC  
mW  
RθJA  
250  
°C / W  
°C  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)  
Parameter  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
Symbol  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
Min.  
100  
80  
Typ.  
Max. Unit  
Test conditions  
-
-
-
V
V
V
IC=0.1mA, IE=0  
IC=1mA, IB=0  
IE=0.1mA, IC=0  
-
5
-
-
-
-
-
-
-
0.1  
0.1  
400  
0.4  
-
µA VCB=80V, IE=0  
µA VEB=4V, IC=0  
Emitter Cut-Off Current  
IEBO  
DC Current Gain  
hFE  
70  
-
-
VCE=3V, IC= 500mA  
IC=500mA, IB=20mA  
Collector-Emitter Saturation voltage  
Transition Frequency  
VCE(sat)  
fT  
-
V
-
100  
20  
MHz VCE=10V,IC=50mA,f=100MHz  
pF VCB=10V, IE=0, f=1MHz  
Collector Output Capacitance  
COB  
-
-
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
10-Nov-2011 Rev. A  
Page 1 of 1  

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