M1MA152WA [SECOS]

Surface Mount Switching Diode; 表面贴装开关二极管
M1MA152WA
型号: M1MA152WA
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Surface Mount Switching Diode
表面贴装开关二极管

二极管 开关
文件: 总2页 (文件大小:114K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
M1MA151WA / M1MA152WA  
Surface Mount Switching Diode  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
A
ANODE  
3
L
3
S
B
Top View  
2
1
3
2
D
1
G
2
1
J
CATHODE  
C
K
H
MAXIMUM RATINGS (T = 25°C)  
A
Rating  
Symbol  
Value  
40  
Unit  
SC-59  
Min  
Reverse Voltage  
M1MA151WA  
M1MA152WA  
M1MA151WA  
M1MA152WA  
Single  
V
R
Vdc  
Dim  
A
Max  
3.10  
1.70  
1.30  
0.50  
2.30  
0.10  
0.26  
0.60  
1.65  
3.00  
80  
2.70  
1.30  
1.00  
0.35  
1.70  
0.00  
0.10  
0.20  
1.25  
2.25  
Peak Reverse Voltage  
Forward Current  
V
RM  
40  
Vdc  
B
80  
C
I
F
100  
150  
225  
340  
500  
750  
mAdc  
mAdc  
mAdc  
D
G
H
Dual  
Peak Forward Current  
Peak Forward Surge Current  
Single  
I
FM  
J
Dual  
K
(1)  
I
FSM  
Single  
L
Dual  
S
THERMAL CHARACTERISTICS  
Rating  
All Dimension in mm  
Symbol  
Max  
200  
Unit  
mW  
°C  
Power Dissipation  
P
D
Junction Temperature  
Storage Temperature  
T
J
150  
T
stg  
55 to +150  
°C  
DEVICE MARKING  
M1MA151WA = MN; M1MA152WA = MO  
ELECTRICAL CHARACTERISTICS (T = 25°C)  
A
Characteristic  
Symbol  
Condition  
Min  
Max  
0.1  
0.1  
1.2  
Unit  
Reverse Voltage Leakage Current  
M1MA151WA  
M1MA152WA  
I
R
V
V
= 35 V  
= 75 V  
40  
80  
µAdc  
R
R
Forward Voltage  
V
F
I
= 100 mA  
Vdc  
Vdc  
F
Reverse Breakdown Voltage  
M1MA151WA  
M1MA152WA  
V
R
I
= 100 µA  
R
Diode Capacitance  
C
V
= 0, f = 1.0 MHz  
15  
pF  
ns  
D
R
(2)  
t
rr  
Reverse Recovery Time  
I
R
= 10 mA, V = 6.0 V,  
10  
F
L
R
= 100 , I = 0.1 I  
rr  
R
1. t = 1 SEC  
2. t Test Circuit  
rr  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  
M1MA151WA / M1MA152WA  
Surface Mount Switching Diode  
Elektronische Bauelemente  
RECOVERY TIME EQUIVALENT TEST CIRCUIT  
INPUT PULSE  
OUTPUT PULSE  
t
r
t
t
p
rr  
I
F
t
t
10%  
R
L
I
= 0.1 I  
R
A
rr  
90%  
I
V
R
= 10 mA  
F
= 6 V  
= 100  
R
V
R
L
t
= 2 µs  
p
t = 0.35 ns  
r
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 2 of 2  

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