MMBD5148 [SECOS]
Surface Mount Switching Diode; 表面贴装开关二极管
| 型号： | MMBD5148 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Surface Mount Switching Diode |
| 文件： | 总2页 (文件大小：160K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
MMBD5148
Surface Mount Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
FEATURES
A suffix of "-C" specifies halogen & lead-free
·
·
Fast Switching Speed
Surface Mount Package Ideally Suited for
Automatic Insertion
·
·
For General Purpose Switching Applications
High Conductance
A
3
L
1
3
2
S
Top View
B
1
2
V
G
3
3
3
3
C
H
J
D
K
1
2
2
1
1
2
2
1
MMBD5148
MMBD5148A
MMBD5148C
MMBD5148S
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol
Value
100
Unit
Vdc
SOT-23
Min
Dim
A
B
C
D
G
H
J
Max
Reverse Voltage
V
R
2.800 3.040
1.200 1.400
0.890 1.110
0.370 0.500
1.780 2.040
0.013 0.100
0.085 0.177
0.450 0.600
0.890 1.020
2.100 2.500
0.450 0.600
Forward Current
I
F
200
mAdc
mAdc
Peak Forward Surge Current
I
500
FM(surge)
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
(1)
Total Device Dissipation FR–5 Board
P
D
225
mW
T
= 25°C
A
Derate above 25°C
1.8
556
300
mW/°C
°C/W
mW
K
L
Thermal Resistance, Junction to Ambient
Total Device Dissipation
R
JA
D
S
P
(2)
Alumina Substrate,
Derate above 25°C
T = 25°C
A
V
2.4
mW/°C
°C/W
°C
All Dimension in mm
Thermal Resistance, Junction to Ambient
Junction and Storage Temperature
DEVICE MARKING
R
417
JA
T , T
J stg
–55 to +150
5148=5H, 5148A=D4, 5148C=D5, 5148S=D6
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise noted) (EACH DIODE)
A
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Reverse Breakdown Voltage (I
(BR)
= 100 µAdc)
V
(BR)
100
—
Vdc
Reverse Voltage Leakage Current
(V = 50 Vdc)
µAdc
I
—
—
—
1.0
3.0
100
R
R
(V = 100 Vdc)
I
R
R2
R3
(V = 50 Vdc, 125°C)
I
R
Forward Voltage
V
F
Vdc
(I = 1.0 mAdc)
0.55
0.67
0.75
0.7
0.82
1.1
F
(I = 10 mAdc)
F
(I = 100 mAdc)
F
Reverse Recovery Time
t
rr
—
4.0
ns
(I = I = 10 mAdc) (Figure 1)
F
R
Capacitance (V = 0 V)
C
—
4
pF
R
1. FR–5 = 1.0
0.75 0.06 2 in.
2.Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
MMBD5148
Surface Mount Switching Diode
Elektronische Bauelemente
820
Ω
+10 V
2 k
0.1 µF
I
F
t
t
t
r
p
I
F
100 µH
t
rr
t
10%
90%
0.1
µF
DUT
50
W
Output
Pulse
Generator
50
Sampling
Oscilloscope
Ω Input
I
= 1 mA
R(REC)
I
R
V
R
Output Pulse
(I = I = 10 mA; measured
Input Signal
F
R
at I
= 1 mA)
R(REC)
Notes: 1. A 2.0 kΩ variable resistor adjusted for a Forward Current (I ) of 10 mA.
F
Notes: 2. Input pulse is adjusted so I
is equal to 10 mA.
R(peak)
Notes: 3. t » t
p
rr
Figure 1. Recovery Time Equivalent Test Circuit
100
10
T
= 150
= 125
°
C
C
A
T
= 85°C
A
T
°
A
T
= –40°C
A
1.0
0.1
10
1.0
0.1
VR
T
= 85
= 55
°
C
C
A
T
= 25°C
A
T
°
A
0.01
0.001
T
= 25
°
C
A
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
50
F, Forward Voltage(V)
VR, Reverse Voltage(V)
Figure 2. Forward Voltage
Figure 3. Leakage Current
0.68
0.64
0.60
0.56
0.52
0
2.0
4.0
6.0
8.0
VR, Reverse Voltage(V)
Figure 4. Capacitance
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
相关型号：
©2020 ICPDF网 联系我们和版权申明