MMBTA05 [SECOS]

Epitaxial Transistor; 外延晶体管
MMBTA05
型号: MMBTA05
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Epitaxial Transistor
外延晶体管

晶体 晶体管
文件: 总2页 (文件大小:319K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
MMBTA05  
NPN Silicon  
Epitaxial Transistor  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen & lead-free  
DESCRIPTION  
SOT-23  
The MMBTA05 is Amplifier Transistor  
A
L
3
3
FEATURES  
Top View  
E
C B  
1
Driver Transistor  
1
2
2
K
F
D
MARKING  
H
J
G
Collector  
C
  
Millimeter  
Min. Max.  
Millimeter  
REF.  
REF.  
Min.  
-
0.40  
0.08  
Max.  
0.18  
0.60  
0.20  
A
B
C
D
E
F
2.70  
2.10  
1.20  
0.89  
1.78  
0.30  
3.04  
2.80  
1.60  
1.40  
2.04  
0.50  
G
H
J
K
L
1H  
  
Base  
0.6 REF.  
0.85  
1.15  
B
E
  
Emitter  
MAXIMUM RATINGS (at T = 25°C unless otherwise specified)  
a
PARAMETER  
SYMBOL  
RATINGS  
UNIT  
Collector - Base Voltage  
VCBO  
VCEO  
VEBO  
IC  
60  
V
V
Collector - Emitter Voltage  
Emitter - Base Voltage  
60  
4
0.5  
V
Collector Current - Continuous  
Collector Power Dissapation  
Junction, Storage Temperature  
A
PC  
300  
mW  
TJ, TSTG  
150, -55~150  
ELECTRICAL CHARACTERISTICS (at T = 25°C unless otherwise specified)  
a
PARAMETER  
TEST CONDITIONS  
SYMBOL  
MIN.  
MAX. UNIT  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cut-Off Current  
IC =100µA, IE =0  
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
ICBO  
60  
60  
4
V
V
V
IC =1mA, IB =0  
IE =100µA, IC =0  
VCB =60V, IE =0  
0.1  
0.1  
0.1  
400  
µA  
µA  
µA  
Collector Cut-Off Current  
VCE =60V, IB =0  
ICEO  
Collector Cut-Off Current  
VEB =3V, IC =0  
IEBO  
VCE =1V, IC =10mA  
VCE =1V, IC =100mA  
IC =100mA, IB =10mA  
VCE =1V, IC=100mA  
VCE =2V, IC=10mA,f=100MHz  
hFE1  
100  
100  
DC Current Gain  
hFE2  
Collector-Emitter Saturation Voltage  
Base-Emitter Voltage  
VCE(sat)  
VBE  
0.25  
1.2  
V
V
Transition Frequency  
FT  
100  
MHz  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Oct-2009 Rev. C  
Page 1 of 2  
MMBTA05  
NPN Silicon  
Epitaxial Transistor  
Elektronische Bauelemente  
CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
26-Oct-2009 Rev. C  
Page 2 of 2  

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