首页 |元器件品牌

PZT3906 [SECOS]

Epitaxial Planar Transistor; 外延平面晶体管
PZT3906
型号： PZT3906
厂家： SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述：

Epitaxial Planar Transistor
外延平面晶体管

晶体 晶体管 开关 光电二极管
文件： 总2页 (文件大小：643K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
PZT3906  
PNP Transistor  
Elektronische Bauelemente  
Epitaxial Planar Transistor  
RoHS Compliant Product  
SOT-223  
Description  
The PZT3906 is designed for general  
purpose switching and amplifier  
applications.  
Millimeter  
Min. Max.  
13̓TYP.  
Millimeter  
REF.  
REF.  
Min.  
Max.  
7.30  
3.10  
0.10  
10̓  
3 9 0 6  
A
C
D
E
I
6.70  
2.90  
0.02  
0̓  
B
J
Date Code  
2.30 REF.  
1
2
3
4
5
6.30  
6.70  
6.70  
3.70  
3.70  
1.80  
B
C
E
6.30  
3.30  
3.30  
1.40  
0.60  
0.25  
0.80  
0.35  
H
ABSOLUTE MAXIMUM RATINGS Tamb =25oC, unless otherwise specified  
Symbol  
Parameter  
Value  
Units  
VCBO  
Collector-Base Voltage  
-40  
-40  
-5  
V
V
VCEO  
VEBO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
mA  
IC  
Collector Current  
-200  
Total Power Dissipation  
PD  
W
1.5  
O
C
Storage Temperature  
-55~+150  
Junction and  
TJ,  
Tstg  
o
ELECTRICAL CHARACTERISTICS Tamb=25  
unless otherwise specified  
C
Typ.  
Uni  
V
t
Parameter  
Symbol  
BVCBO  
*BVCEO  
BVEBO  
ICES  
Min  
Max  
Test Conditions  
IC=-10 µA  
IC=-1mA  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector-Base Cutoff Current  
-40  
-
-
-
-
-
-
-
-
-
V
-40  
-5  
-
V
IE=-10µA  
VCB=-30V  
-50  
-50  
nA  
nA  
Emitter-Base Cutoff Current  
-
IEBO  
VEB=-  
3V  
-0.25  
-0.4  
*VCE(sat)1  
*VCE(sat)2  
*VBE(sat)1  
*VBE(sat)2  
*hFE1  
-
-
IC=-10mA,IB=-1mA  
IC=-50mA,IB=-5mA  
IC=-10mA,IB=-1mA  
IC=-50mA,IB=-5mA  
Collector Saturation Voltage  
V
-0.2  
-0.65  
-0.85  
-
-0.84  
-
V
V
Base Saturation Voltage  
DC Current Gain  
-
60  
-0.95  
-
-
VCE=-1V, IC=-0.1mA  
*hFE2  
-
80  
VCE=-1V, IC=-1mA  
VCE=- 1V, IC=-10mA  
VCE=- 1V, IC=-50mA  
*hFE3  
-
-
100  
60  
300  
-
*hFE4  
-
-
-
*hFE5  
-
-
VCE=-1V, IC=-100mA  
VCE=- 20 V, IC=-10mA  
VCB=-5V, f=1MHz  
30  
250  
-
Gain-Bandwidth Product  
Output Capacitance  
fT  
MH  
pF  
z
, f=100MHz  
4.5  
Cob  
≦
≦
*Pulse test: Pulse width 300 s, Duty Cycle 2%  
µ
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 1 of 2  
PZT3906  
PNP Transistor  
Elektronische Bauelemente  
Epitaxial Planar Transistor  
Characteristics Curve  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Jun-2002 Rev. A  
Page 2 of 2  

相关型号：

PZT3906-T

 TRANSISTOR 100 mA, 40 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SOT-223, 4 PIN, BIP General Purpose Small Signal
NXP

PZT3906/S62Z

 0.2A, 40V, PNP, Si, POWER TRANSISTOR
TI

PZT3906S62Z

 Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon
FAIRCHILD

PZT3906T/R

 TRANSISTOR | BJT | PNP | 40V V(BR)CEO | 200MA I(C) | SOT-223
ETC

PZT3906T1

 General Purpose Transistor PNP Silicon
ONSEMI

PZT3906T1/D

 PZT3906T1 Data Sheet
ETC

PZT3906T1G

 General Purpose Transistor PNP Silicon
ONSEMI

PZT3906TRL

 Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
YAGEO

PZT3906TRL13

 TRANSISTOR 0.2 A, 40 V, PNP, Si, POWER TRANSISTOR, BIP General Purpose Power
NXP

PZT3906TRL13

 Power Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin
YAGEO

PZT3906_NL

 Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, SOT-223, 4 PIN
FAIRCHILD

PZT4033

 PNP SILICON TRANSISTOR
UTC
©2020 ICPDF网 联系我们和版权申明