PZT559 [SECOS]
PNP Silicon Planar; PNP硅平面
| 型号： | PZT559 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | PNP Silicon Planar |
| 文件： | 总2页 (文件大小：925K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PZT559
PNP Silicon Planar
Elektronische Bauelemente
High Current Transistor
RoHS Compliant Product
SOT-223
Description
The PZT559 is designed for general
purpose switching and amplifier
applications.
Features
* Excellent Gain Characteristic Specified
Up To 3 Amps.
Millimeter
Min. Max.
13̓TYP.
Millimeter
REF.
REF.
* 4 Amps Continuous Current, Up To
10 Amps Peak Current
Min.
6.70
2.90
0.02
0̓
Max.
7.30
3.10
0.10
10̓
A
C
D
E
I
B
J
2.30 REF.
* Very Low Saturation Voltages
5 5 9
1
2
3
4
5
6.30
6.70
6.70
3.70
3.70
1.80
Date Code
6.30
3.30
3.30
1.40
0.60
0.25
0.80
0.35
B
C
E
H
MAXIMUM RATINGS* (Tamb =25oC, unless otherwise specified)
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-180
-140
-6
V
V
V
A
VCEO
VEBO
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (Pulse)
-4
IC
ICM
A
-10
3
W
Total Power Dissipation
PD
O
C
Storage Temperature
-55~+150
Junction and
TJ,
Tstg
*The power which can be dissipated assuming the device is mounted in a typical on a P.C.B. with copper equal to 4 square inch min..
o
ELECTRICAL CHARACTERISTICS Tamb=25
unless otherwise specified
C
Typ.
Uni
t
Parameter
Collector-Base Breakdown Voltage
Symbol
BVCBO
BVCER
*BVCEO
BVEBO
Min
-180
-180
-140
-6
Max
Test Conditions
IC=-100µA, IE=0
-
-
-
-
-
V
V
V
V
Ω
≦
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
IC=-1µA, RB 1K
-
-
-
-
-
-
IC=-10mA, IB=0
IE=-100µA, IC=0
ICBO
ICER
-
-
-50
-50
nA
nA
nA
VCB=-150V, IE=0
Ω
≦
1K
R
0V,
-15
B=
VC
VEB=-
IEBO
-
-
C=0
6V,I
-10
-60
-
-
*VCE(sat)1
*VCE(sat)2
*VCE(sat)3
IC=-100m A,IB=-5mA
IC=-500A,IB=-50mA
IC=-1A,IB=-100mA
IC=-3A,IB=-300mA
IC=-3A,IB=-300mA
IC=-3A,VCE=-5V
-120
-
Collector Saturation Voltage
mV
-150
-370
-
-
-
-
*VCE(sat)4
*VBE(sat)
*VBE(on)
*hFE1
Base Saturation Voltage
Base-Emitter Voltage
-
-
V
V
-1.11
-0.95
-
-
-
100
100
75
-
VCE=-5V, IC=-10mA
*hFE2
200
140
300
-
-
VCE=-5V, IC=-1 A
DC Current Gain
*hFE3
VCE=- 5V, IC=-3A
VCE=- 5V, IC=-10A
VCE=- 10V, IC=-100mA
VCB=-20V, f=1MHz
*hFE4
-
-
10
110
-
fT
MH
z
, f=50MHz
1
Gain-Bandwidth Product
Output Capacitance
-
-
-
-
40
68
pF
Cob
Ton
Toff
-
-
On-Time
Off-Time
nS
1A
VCC=-50V,IC=- ,IB1=IB2=- 00mA
1030
=
≦
*Measured under pulse condition. Pulse width 300 s, Duty Cycle 2%
http://www.SeCoSGmbH.com
µ
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
PZT559
PNP Silicon Planar
Elektronische Bauelemente
High Current Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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