S10GBU80-C [SECOS]
Voltage 200V ~800V 100Amp Glass Passivited Bridge Rectifers; 电压200V 〜 800V 100Amp玻璃Passivited桥Rectifers
| 型号： | S10GBU80-C |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Voltage 200V ~800V 100Amp Glass Passivited Bridge Rectifers |
| 文件： | 总2页 (文件大小：238K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
S10GBU20-C ~ S10GBU80-C
Voltage 200V ~ 800V
10.0Amp Glass Passivited Bridge Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
GBU
FEATURES
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Ideal for printed circuit board
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Reliable low cost construction utilizing
molded plastic technique
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Plastic material has Underwriters Laboratory
flammability classification 94V-0
Mounting position: Any
These are Halogen & Pb Free components
This series is UL recognized under Component Index,
file number E255340
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ꢀ
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Millimeter
Millimeter
Min. Max.
REF.
REF.
Min.
Max.
22.3
18.8
3.55
18.5
2.2
A
B
C
D
E
F
21.7
18.2
3.15
17.5
1.8
I
J
1.8
1.8
0.4
9.9
5.2
3.3
2.2
2.2
0.6
10.1
5.8
3.8
K
L
M
N
P
0.9
1.2
G
H
3.4
3.8
3 × 45°
5
5.2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.)
Part Number
Parameter
Symbol
Unit
S10GBU20-C S10GBU40-C S10GBU60-C S10GBU80-C
200 400 600 800
Maximum Recurrent Peak Reverse Voltage
VRRM
V
TC=100°C
Average Rectified
10
3.6
200
(with heat sink)
Output Current @50HZ
TA=25°C
IO
A
sine wave, R-load
(without heat sink)
Peak Forward Surge Current @
50HZ sine wave, 1 cycle, TA=25°C
IFSM
A
Maximum Peak Forward Voltage3
VFM
IRRM
1.1
5
V
Peak Reverse Current 2
µA
I2t Rating for Fusing @1ms≤t＜10ms,
TJ=25°C,Rating of per diode
I2t
166
8
A2s
Mounting Torque @ Recommend
torque:5kg·cm
Dielectric Strength1
TOR
Vdis
Kg‧cm
2
4.8
21
4
kV
Typical Thermal Resistance (with heat sink)
Typical Thermal Resistance(without heat sink)
Typical Thermal Resistance(without heat sink)
Operating and Storage temperature range
R
θJC
θJA
°C/W
°C/W
°C/W
°C
R
RθJL
TJ,TSTG
150, -40~150
Notes：
1. Terminals to case，AC 1 minute
2. VRM=VRRM, Pulse measurement, Rating of per diode.
3. IFM=10.0A, Pulse measurement, Rating of per diode
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Jun-2012 Rev. A
Page 1 of 2
S10GBU20-C ~ S10GBU80-C
Voltage 200V ~ 800V
10.0Amp Glass Passivited Bridge Rectifiers
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
29-Jun-2012 Rev. A
Page 2 of 2
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