SBL20U60 [SECOS]

Voltage 60V,20.0Amp Low VF Planar MOS Barrier Schottky Rectifier; 电压60V , 20.0Amp低VF平面MOS势垒肖特基整流器
SBL20U60
型号: SBL20U60
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Voltage 60V,20.0Amp Low VF Planar MOS Barrier Schottky Rectifier
电压60V , 20.0Amp低VF平面MOS势垒肖特基整流器

文件: 总2页 (文件大小:105K)
中文:  中文翻译
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SBL20U60  
Voltage 60V,20.0 Amp  
Low VF Planar MOS Barrier Schottky Rectifier  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen free  
TO-220  
FEATURES  
B
N
D
E
Planar MOS Schottky technology  
Low forward voltage drop  
High current capability  
High reliability  
High surge current capability  
Epitaxial construction  
M
P
A
C
O
J
H
L
MECHANICAL DATA  
Case: Molded plastic  
G
F
K
L
Epoxy: UL94V-0 rate flame retardant  
Lead: Lead solderable per MIL-STD-202  
method 208 guaranteed  
Millimeter  
Min.  
Millimeter  
Polarity: As Marked  
Mounting position: Any  
Weight: 1.98 g (Approximate)  
REF.  
REF.  
Max.  
16.51  
10.67  
14.75  
4.90  
1.45  
2.92  
0.76  
4.5  
Min.  
0.7  
Max.  
1.78  
1.02  
2.69  
3.43  
4.09  
9.65  
1.45  
A
B
C
D
E
F
14.22  
9.65  
12.50  
3.56  
0.51  
2.03  
0.31  
3.5  
J
K
L
M
N
O
P
0.38  
2.39  
2.50  
3.10  
8.38  
0.89  
1
3
2
G
H
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Parameter  
Symbol  
Rating  
Unit  
Maximum Recurrent Peak Reverse Voltage  
Working Peak Reverse Voltage  
VRRM  
VRSM  
VDC  
60  
60  
V
V
V
Maximum DC Blocking Voltage  
60  
10  
Maximum Average Forward Rectified  
Current  
(Per Leg)  
A
IF  
20  
(Per Device)  
IFSM  
150  
A
Peak Forward Surge Current, 8.3 ms single half sine-wave  
Voltage Rate of Chance (Rated VR)  
dv/dt  
10000  
2
V / µs  
°C /W  
°C  
Typical Thermal Resistance  
Rθ  
JC  
Operating and Storage Temperature Range  
TJ,TSTG  
-40~150  
ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Typ.  
Max.  
0.41  
0.49  
0.6  
-
Unit  
Test Condition  
IF = 3A, TJ = 25°C  
0.38  
0.44  
0.56  
0.54  
-
IF = 5A, TJ = 25°C  
IF = 10A, TJ = 25°C  
IF = 10A, TJ = 125°C  
TJ=25°C  
Maximum Instantaneous Forward  
Voltage  
VF  
V
0.3  
15  
Maximum DC Reverse Current  
at Rated DC Blocking Voltage 2  
Typical Junction Capacitance 1  
IR  
mA  
pF  
-
TJ=100°C  
CJ  
320  
-
NOTES:  
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.  
2. Pulse TestPulse Width = 300 µs, Duty Cycle 2.0%.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
14-May-2013 Rev. A  
Page 1 of 2  
SBL20U60  
Voltage 60V,20.0 Amp  
Low VF Planar MOS Barrier Schottky Rectifier  
Elektronische Bauelemente  
RATINGS AND CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
14-May-2013 Rev. A  
Page 2 of 2  

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