SBL30A60 [SECOS]

Low VF Planar MOS Barrier Schottky Rectifier;
SBL30A60
型号: SBL30A60
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Low VF Planar MOS Barrier Schottky Rectifier

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中文:  中文翻译
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SBL30A60  
Voltage 60V, 30.0 Amp  
Low VF Planar MOS Barrier Schottky Rectifier  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen free  
TO-220  
FEATURES  
Planar MOS Schottky technology  
Low forward voltage drop  
High current capability  
High reliability  
High surge current capability  
Epitaxial construction  
B
N
D
E
M
P
A
C
O
MECHANICAL DATA  
Case: Molded plastic  
J
H
L
Epoxy: UL94V-0 rate flame retardant  
Lead: Lead solderable per MIL-STD-202  
method 208 guaranteed  
Polarity: As Marked  
Mounting position: Any  
G
F
K
L
Millimeter  
Min.  
14.22  
9.57  
12.50  
3.56  
0.51  
2.03  
0.279  
2.95  
Millimeter  
Weight: 1.98 g (Approximate)  
REF.  
REF.  
Max.  
16.51  
10.90  
14.75  
5.10  
1.47  
3.19  
0.76  
4.5  
Min.  
Max.  
1.78  
1.11  
3.07  
3.43  
4.31  
9.65  
A
B
C
D
E
F
J
K
L
M
N
O
P
0.70  
0.38  
2.01  
2.22  
3.10  
8.10  
ORDER INFORMATION  
Part Number  
Type  
Lead (Pb)-free  
Lead (Pb)-free and Halogen-free  
G
H
1.18 Typ.  
SBL30A60  
SBL30A60-C  
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
(Rating 25°C ambient temperature unless otherwise specified. Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, de-rate current by 20%.)  
Parameter  
Maximum Recurrent Peak Reverse Voltage  
Working Peak Reverse Voltage  
Symbol  
VRRM  
Rating  
60  
Unit  
V
VRSM  
60  
V
Maximum DC Blocking Voltage  
VDC  
60  
V
(Per Leg)  
(Per Device)  
15  
Maximum Average Forward Rectified  
Current  
IF  
A
A
30  
Peak Forward Surge Current, 8.3 ms single half sine-wave  
Superimposed on rated load (JEDEC method)  
IFSM  
180  
Voltage Rate of Chance (Rated VR)  
Typical Thermal Resistance  
dv/dt  
10000  
2
V / µs  
°C /W  
°C  
Rθ  
JC  
Operating and Storage Temperature Range  
TJ,TSTG  
-40~150  
ELECTRICAL CHARACTERISTICS  
Parameter  
Symbol  
Typ.  
Max.  
Unit  
Test Condition  
IF=3A, TJ=25°C  
0.4  
0.5  
0.57  
0.52  
-
-
-
IF=10A, TJ=25°C  
IF=15A, TJ=25°C  
IF=15A, TJ=125°C  
TJ=25°C  
Maximum Instantaneous Forward Voltage  
VF  
V
0.63  
-
0.5  
20  
-
Maximum DC Reverse Current  
at Rated DC Blocking Voltage 2  
Typical Junction Capacitance 1  
IR  
mA  
pF  
-
TJ=100°C  
CJ  
650  
Notes:  
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2. Pulse TestPulse Width = 300 µs, Duty Cycle 2.0%.  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
22-May-2018 Rev. A  
Page 1 of 2  
SBL30A60  
Voltage 60V, 30.0 Amp  
Low VF Planar MOS Barrier Schottky Rectifier  
Elektronische Bauelemente  
RATING AND CHARACTERISTIC CURVES  
http://www.SeCoSGmbH.com/  
Any changes of specification will not be informed individually.  
22-May-2018 Rev. A  
Page 2 of 2  

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