SBR3045R [SECOS]
30.0 Amp Schottky Barrier Rectifiers; 30.0 AMP的肖特基二极管型号: | SBR3045R |
厂家: | SECOS HALBLEITERTECHNOLOGIE GMBH |
描述: | 30.0 Amp Schottky Barrier Rectifiers |
文件: | 总2页 (文件大小:894K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SBR3045R
VOLTAGE 45 V
30.0 Amp Schottky Barrier Rectifiers
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
TO-220
B
N
D
E
FEATURES
M
J
A
C
Low forward voltage drop
High current capability
High reliability
High surge current capability
Epitaxial construction
H
L
K
L
G
F
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Millimeter
Millimeter
REF.
REF.
Min.
15.00
9.50
Max.
15.60
10.50
Min.
Max.
3.80
1.50
0.90
2.74
2.90
φ 3.4
A
B
C
D
E
F
H
J
K
L
M
N
3.00
0.90
0.50
2.34
2.50
φ 3.1
13.00 Min
4.30
2.50
2.40
0.30
4.70
3.10
2.80
0.70
Weight: 1.93 grams (approximate)
G
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating 25°C ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive or inductive load.
For capacitive load, de-rate current by 20%.
SYMBOL
SBR3045R
TYPE NUMBER
UNITS
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
VRRM
VRSM
VDC
45
45
45
15
30
V
V
V
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Current
Per Leg
IF
IFSM
VF
IR
A
Per Device
Peak Forward Surge Current, 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
180
A
V
Maximum Instantaneous
Forward Voltage
IF = 15 A, TA = 25°C, per leg
IF = 15 A, TA = 125°C, per leg
TA = 25°C
0.57
0.52
Maximum DC Reverse Current
0.5
mA
at Rated DC Blocking Voltage(Note3)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance (Note 2)
TA = 100°C
12
CJ
RθJC
dv / dt
TJ
2400
pF
°C /W
V / µs
°C
2.5
10000
-50 ~ +150
-65 ~ +175
Operating Temperature Range TJ
Storage Temperature Range TSTG
TSTG
°C
NOTES:
1. Measured at 1MHz and applied reverse voltage of 5.0V D.C.
2. Thermal Resistance Junction to Case.
3. Pulse Test: Pulse Width =300uS, Duty Cycle<=2%
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Dec.-2010 Rev. A
Page 1 of 2
SBR3045R
VOLTAGE 45 V
30.0 Amp Schottky Barrier Rectifiers
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES (SBR3045R)
Typical Forward Current Derating Curve
Typical Forward Characteristic
50
21
18
20
15
12
9
5
6
100℃
3
0
75℃
1
190
20
50
100
150
25℃
Tc, Case Temperature (℃)
50℃
Typical Junction Capacitance
4000
0.1
0.4
0.3
0.5
0.6
0.1
0.2
0.7
Forward Voltage (V)
3000
2000
1000
Typical Reverse Characteristic
100
0
100
10
1
0.1
Revise Voltage (%)
100℃
10
Maximum Non- Repetitive Forward
Surge Current
200
160
75℃
1
8.3mS Single half
Sine Wave
JEDEC Method
Tj=25℃
120
80
50℃
25℃
0.1
40
0
0.01
100
10
40
0
50
30
0
10
20
Number of Cycles at 60Hz
Reverse Voltage(V)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
07-Dec.-2010 Rev. A
Page 2 of 2
相关型号:
SBR3045RE3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 45V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
MICROSEMI
SBR3045SCTB
Rectifier Diode, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3
DIODES
SBR3045SCTB-13
Rectifier Diode, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, D2PAK-3
DIODES
SBR3045SCTB-13-G
Rectifier Diode, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, GREEN, PLASTIC, D2PAK-3
DIODES
SBR3045SCTB-G
Rectifier Diode, 1 Phase, 2 Element, 15A, 45V V(RRM), Silicon, GREEN, PLASTIC, D2PAK-3
DIODES
SBR3050E3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
MICROSEMI
SBR3050RE3
Rectifier Diode, Schottky, 1 Phase, 1 Element, 30A, 50V V(RRM), Silicon, DO-203AA, DO-4, 1 PIN
MICROSEMI
©2020 ICPDF网 联系我们和版权申明