SCS4448DSTL [SECOS]
0.5A , 80V Plastic-Encapsulated Switching Diode; 0.5A ， 80V塑封开关二极管
| 型号： | SCS4448DSTL |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 0.5A , 80V Plastic-Encapsulated Switching Diode |
| 文件： | 总2页 (文件大小：317K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SCS4448DSTL
0.5A , 80V
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
WBFBP-03D
ꢀ
Epitaxial planar Silicon diode
D
E
L C
FEATURES
ꢀ
ꢀ
ꢀ
ꢀ
Fast Switching Speed
Ultra-Small Surface Mount Package
For General Purpose Switching Applications
High Conductance
D
H
B
F
K
G
APPLICATIONS
A
J
ꢀ
High Conductance Ultra Fast Diode
ꢀ
For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM,
DVD-ROM, Note book PC, etc.)
Millimeter
Millimeter
Min. Max.
REF.
REF.
Min.
Max.
1.050
1.050
0.070
0.310
A
B
C
D
0.950
0.950
0.010
0.210
G
H
J
-
0.050
0.610
0.350
0.050
0.510
0.250
-
K
MARKING
E
F
0.350 REF.
0.680 REF.
L
0.450
0.550
A3
TOP VIEW
PACKAGE INFORMATION
Package
MPQ
5K
Leader Size
WBFBP-03D
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameters
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Symbol
Rating
80
Unit
VRRM
V
V
V
RWM
80
V
R
80
V
Non-Repetitive Peak reverse voltage
RMS Reverse Voltage
VRM
VR(RMS)
IFM
100
57
V
V
Forward Continuous Current
Average Rectified Output Current
500
250
4
mA
mA
IO
t=1.0µs
Non-Repetitive Peak Forward Surge
Current
IFSM
A
t=1.0s
2
Power Dissipation
PD
100
1250
-65~150
mW
Thermal Resistance, Junction to Ambient
Storage Temperature
RθJA
TSTG
°C / W
°C
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jul-2011 Rev. A
Page 1 of 2
SCS4448DSTL
0.5A , 80V
Plastic-Encapsulated Switching Diode
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameters
Symbol
Min.
Max.
Unit
Test Conditions
VF1
0.62
0.72
V
IF=5mA
VF2
VF3
VF4
IR1
-
-
0.855
1
V
V
IF=10mA
IF=100mA
IF=150mA
VR=70V
Forward Voltage
-
1.25
0.1
25
V
-
µA
nA
V
Maximum DC Reverse Current at rated
DC blocking voltage
IR2
-
VR=20V
Reverse Breakdown Voltage
VR
80
-
-
IR=2.5µA
Capacitance between terminals
Maximum Reverse Recovery Time
CT
3.5
4
pF
nS
V
V
R
=6V, f=1MHz
=6V, IF=5mA
TRR
-
R
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
21-Jul-2011 Rev. A
Page 2 of 2
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