SGM9452 [SECOS]
N-Channel Enhancement Mode Power MOSFET;
| 型号： | SGM9452 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Power MOSFET |
| 文件： | 总3页 (文件大小：211K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SGM9452
4A , 20V , RDS(ON) 38 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOT-89
The SGM9452 provide the designer with the best
A
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The SOT-89 package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
4
Top View
C B
1
2
3
K
F
L
E
D
FEATURES
G
H
J
ꢀ
ꢀ
ꢀ
ꢀ
Fast Switching
Dynamic dv/dt Rating
Repetitive Avalanche Rated
Simple Drive Requirement
Millimeter
Millimeter
Min. Max.
REF.
REF.
Min.
Max.
4.60
4.25
2.60
1.60
A
B
C
D
E
F
4.40
4.05
2.40
1.40
G
H
J
-
-
0.89
0.35
0.70
1.20
0.41
0.80
K
L
3.00 REF.
1.50 REF.
0.40
0.52
D
24
PACKAGE INFORMATION
Package
MPQ
1K
Leader Size
1
G
SOT-89
7 inch
3
S
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
Unit
V
20
Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
ID
4
0.5
A
Power Dissipation
PD
W
Thermal Resistance Junction-Ambient.
Operating Junction & Storage Temperature
RθJA
250
°C / W
°C
TJ, TSTG
150, -55~150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Dec-2013 Rev. A
Page 1 of 3
SGM9452
4A , 20V , RDS(ON) 38 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
Parameter
Drain-Source Breakdown Voltage
Gate Threshold Voltage
Symbol
BVDSS
VGS(th)
IGSS
Min. Typ. Max. Unit
Teat Conditions
VGS=0, ID=250µA
20
-
-
-
-
-
-
-
-
-
1.5
±100
1
V
V
0.7
VDS=VGS, ID=250µA
VGS= ±12V, VDS=0
VDS=20V, VGS=0
VGS=10V, ID=4A
VGS=4.5V, ID=4A
VGS=2.5V, ID=3A
VDS=5V, ID=3A
Gate-Source Leakage Current
Drain-Source Leakage Current
-
-
nA
µA
IDSS
-
38
50
80
-
Static Drain-Source On-Resistance 1
Forward transconductance 1
RDS(ON)
mΩ
-
-
gFS
3
S
Dynamic characteristics 2
Turn-on Delay Time 1.2
Rise Time 2
Td(on)
Tr
-
-
-
-
-
-
-
8
9
-
-
-
-
-
-
-
V
ID=1A
VGS=5V
RGEN=3.3Ω
RD=10Ω
DS=10V
nS
pF
Turn-off Delay Time 2
Fall Time 2
Td(off)
Tf
13
3
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
570
80
65
V
GS=0
VDS=20V
f=1.0 MHz
Drain-source body diode characteristics
VSD 1.3
Forward On Voltage1
Notes:
-
-
V
IS=1A, VGS=0
1. Pulse Test ; Pulse Width ≤300µs, Duty Cycle ≤2%.
2. These parameters have no way to verify
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Dec-2013 Rev. A
Page 2 of 3
SGM9452
4A , 20V , RDS(ON) 38 mΩ
N-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
13-Dec-2013 Rev. A
Page 3 of 3
相关型号：
©2020 ICPDF网 联系我们和版权申明