SGSC4558 [SECOS]

Dual Operational Amplifier; 双路运算放大器
SGSC4558
型号: SGSC4558
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

Dual Operational Amplifier
双路运算放大器

运算放大器
文件: 总4页 (文件大小:524K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SGSC4558  
Dual Operational Amplifier  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen or lead -free  
DESCRIPTION  
The SGSC4558 is a monolithic integrated circuit designed for dual operational amplifier.  
FEATURES  
z
z
z
z
z
z
z
No frequency compensated required  
No latch-up  
Large common mode and differential voltage range  
Parameter tracking over temperature range  
Gain and phase match between amplifiers  
Internally frequency compensated  
Low noise input transistors  
PACKAGE DIMENSIONS  
Millimeter  
Millimeter  
REF.  
REF.  
Min.  
Max.  
Min.  
Max.  
A
B
C
D
E
F
5.80  
4.80  
3.80  
0°  
0.40  
0.19  
6.20  
5.00  
4.00  
8°  
0.90  
0.25  
M
H
L
J
K
G
0.10  
0.35  
1.35  
0.25  
0.49  
1.75  
0.375 REF.  
45°  
1.27 TYP.  
PIN CONFIGURATIONS  
BLOCK DIAGRAMS  
01-June-2003 Rev. A  
Page 1 of 4  
SGSC4558  
Dual Operational Amplifier  
Elektronische Bauelemente  
ABSOULTE MAXIMUM RATINGS  
Parameter  
Value  
Units  
Supply Voltage (Vcc)  
±22  
V
V
Differential Input Voltage (VI(DIFF)  
Input Voltage (VI)  
)
±18  
±15  
V
Power Dissipation (PD)  
400  
mW  
°C  
Operating & Junction Temperature (TOPR, TSTG  
)
0~+70, -65~+150  
ELECTRICAL CHARACTERISTICS  
(Vcc=15V, VEE=-15V,TA=25°C)  
Symbol  
Characteristics  
Min.  
Typ.  
Max.  
Units  
Test Conditions  
Supply Current, all Amp, no load  
Input Offset Current  
Input Bias Current  
ICC  
IIO  
-
-
2.3  
5
4.5  
200  
500  
6
mA  
nA  
nA  
mV  
V
IBIAS  
VIO  
-
30  
2
RS<10kΩ  
RL10kΩ  
Input Offset Voltage  
Output Voltage Swing  
Common Mode Input Voltage  
Large Signal Voltage Gain  
Common Mode Rejection Ratio  
Supply Voltage Rejection Ratio  
Power Consumption  
Slew Rate  
-
VO(P-P)  
VI(R)  
GV  
-
12  
±13  
200  
90  
90  
70  
2.2  
0.3  
15  
2
14  
-
±12  
20  
70  
76  
-
V
V
O(P-P)=±10V, RL2kΩ  
RS10kΩ  
-
V/mV  
dB  
dB  
mV  
V/us  
us  
CMRR  
PSRR  
PC  
RS10kΩ  
170  
Vi=±10V, RL2kΩ, CL100pF  
Vi=±20mV, RL2kΩ, CL100pF  
Vi=±20mV, RL2kΩ, CL100pF  
SR  
1.2  
-
-
-
-
-
-
Rise Time  
TRIS  
OS  
Overshoot  
-
%
Input Resistance  
Ri  
0.3  
-
MΩ  
Ω
Output Resistance  
RO  
75  
f=1kHz, AV=20dB, RL=2kΩ, VO= 2VPP  
,
Total Harmonic Distortion  
Channel Separation  
THD  
-
-
0.008  
120  
-
-
%
CL=100pF  
VO1/VO2  
dB  
FREQUENCY CHARACTERISTICS  
(Vcc=15V, VEE=-15V,TA=25°C)  
Symbol  
Parameter  
Min.  
Typ.  
Max.  
Units  
Test Conditions  
Unity Gain Bandwidth  
BW  
2.0  
2.8  
-
MHz  
01-June-2003 Rev. A  
Page 2 of 4  
SGSC4558  
Dual Operational Amplifier  
Elektronische Bauelemente  
CHARACTERISTIC CURVE  
01-June-2003 Rev. A  
Page 3 of 4  
SGSC4558  
Dual Operational Amplifier  
Elektronische Bauelemente  
CHARACTERISTIC CURVE (cont’d)  
01-June-2003 Rev. A  
Page 4 of 4  

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