SM2150A [SECOS]

2.0Amp Schottky Barrier Rectifiers; 2.0AMP肖特基二极管
SM2150A
型号: SM2150A
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

2.0Amp Schottky Barrier Rectifiers
2.0AMP肖特基二极管

肖特基二极管
文件: 总2页 (文件大小:294K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SM2150A  
VOLTAGE 150V  
Elektronische Bauelemente  
2.0Amp Schottky Barrier Rectifiers  
RoHS Compliant Product  
A suffix of "-C" specifies halogen & lead-free  
SM A  
FEATURES  
* Low forward voltage drop  
* High current capability  
* High reliability  
* High surge current capability  
* Epitaxial construction  
Dimensions in  
Millimeters  
Dimensions in  
Inches  
C
H
A
MECHANICAL DATA  
* Case: Molded plastic  
* Epoxy: UL 94V-0 rate flame retardant  
* Lead: Lead solderable per MIL-STD-202,  
method 208 guaranteed  
1.25  
3.99  
2.50  
1.98  
0.051  
4.78  
0.76  
0.152  
1.65  
0.049  
0.157  
0.098  
0.078  
0.002  
0.188  
0.030  
0.006  
0.065  
0.181  
0.114  
0.096  
0.008  
0.208  
0.060  
0.012  
A
B
C
D
E
F
4.60  
2.90  
B
2.44  
0.203  
5.28  
D
* Polarity: As Marked  
G
H
1.52  
E
* Mounting position: Any  
0.305  
* Weight: 0.093 grams(Approximately)  
G
F
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Rating 25 C ambient temperature unless otherwise specified.  
Single phase half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SM2150A  
UNITS  
TYPE NUMBER  
Maximum Recurrent Peak Reverse Voltage  
Working Peak Reverse Voltage  
150  
150  
150  
V
V
V
Maximum DC Blocking Voltage  
Maximum Average Forward Rectified Current  
A
A
2
See Fig. 1  
Peak Forward Surge Current, 8.3 ms single half sine-wave  
50  
superimposed on rated load (JEDEC method)  
0.85  
V
Maximum Instantaneous Forward Voltage (IF=2Amps,Ta = 25 C)  
mA  
Maximum DC Reverse Current  
Ta=25 C  
0.02  
at Rated DC Blocking Voltage  
Ta=125 C  
1
mA  
pF  
150  
28  
118  
Typical Junction Capacitance (Note1)  
Typical Thermal Resistance RqJL (Note 2)  
Typical Thermal Resistance RθJA (Note 2)  
Operating Temperature Range TJ  
Storage Temperature Range TSTG  
C/W  
C/W  
C
-50 +150  
~
C
-65 +175  
~
NOTES:  
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.  
2. Aluminum substrate mounted.  
Any changing of specification will not be informed individual  
http://www.SeCoSGmbH.com  
01-Nov-2006 Rev. B  
Page 1 of 2  
SM2150A  
VOLTAGE 150  
Elektronische Bauelemente  
2.0Amp Schottky Barrier Rectifiers  
RATING AND CHARACTERISTIC CURVES  
Typical Forward Current Derating Curve  
Typical Forward Characteristic  
3
3
2
2
125℃  
100℃  
75℃  
1
0
190  
20  
50  
100  
150  
Tc, Case Temperature ()  
50℃  
25℃  
Typical Junction Capacitance  
0.1  
200  
0.6  
0.5  
0.7  
0.8  
0.4  
0.9  
0.3  
Forward Voltage (V)  
150  
100  
50  
Typical Reverse Characteristic  
100  
10  
1
0
100  
10  
1
Revise Voltage (%)  
Maximum Non- Repetitive Forward  
Surge Current  
50  
40  
125℃  
100℃  
8.3mS Single half  
Sine Wave  
JEDEC Method  
Tj=25  
30  
20  
10  
75℃  
50℃  
25℃  
0.1  
0
0.01  
100  
10  
0
130  
160  
100  
10  
40  
70  
Number of Cycles at 60Hz  
Reverse Voltage(V)  
http://www.SeCoSGmbH.com  
Any changing of specification will not be informed individual  
01-Nov-2006 Rev. B  
Page 2 of 2  

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