SMF107M [SECOS]
1 Amp Surface Mount Fast Recovery Rectifier;
| 型号： | SMF107M |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | 1 Amp Surface Mount Fast Recovery Rectifier 光电二极管 |
| 文件： | 总3页 (文件大小：61K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMF101M~SMF107M
50V ~ 1000 V
1.0 Amp Surface Mount Fast Recovery Rectifier
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SOD-123M
ꢀ
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
A
ꢀ
Low profile surface mounted application
in order to optimize board space.
Small plastic SMD package.
B
F
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
High current capability.
D
Fast switching for high efficiency.
High surge current capability.
Glass-passivated chip junction.
C
E
E
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.90
1.80
1.70
Min.
Max.
MECHANICAL DATA
A
B
C
3.50
1.40
1.30
D
E
F
3.60 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Case: Molded plastic, SOD-123 / Mini SMA
Epoxy: UL94-V0 rate flame retardant
Polarity: Indicated by cathode band
Mounting position: Any
Weight: Approximated 0.027 gram
MARKING
Part Number
Marking
F4
Part Number
SMF105M
SMF106M
SMF107M
Marking
F5
SMF101M
SMF102M
SMF103M
SMF104M
F4
F6
F4
F7
F4
PACKAGE INFORMATION
Package
MPQ
2.5K
Leader Size
7 inch
SOD-123M
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Dec-2011 Rev. B
Page 1 of 3
SMF101M~SMF107M
50V ~ 1000 V
1.0 Amp Surface Mount Fast Recovery Rectifier
Elektronische Bauelemente
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Part Number
Parameters
Symbol
Unit
SMF
SMF
SMF
SMF
SMF
SMF
SMF
101M
102M
103M
104M
105M 106M
107M
Maximum repetitive peak reverse voltage
Maximum RMS voltage
VRRM
VRMS
VR
V
V
V
V
50
35
50
100
70
200
400
280
400
1.3
600
420
600
800
560
800
1000
700
140
200
Maximum Continuous reverse voltage
Maximum Instantaneous Forward Voltage
100
1000
VF
Maximum average forward rectified
current @ TA=55°C
IO
A
A
1
Peak Forward Surge Current, 8.3ms
single half sine-wave superimposed on
rated load (JEDEC method)
IFSM
30
Maximum DC Reverse
Current at Rated DC
Blocking Voltage
Diode Junction Capacitance 1
TA=25°C
5
IR
µA
TA=125°C
100
15
CJ
Trr
pF
nS
Maximum Reverse Recovery Time 2
150
250
500
Thermal resistance Junction to ambient
RθJA
42
°C / W
°C
Operating & Storage Temperature
NOTE:
TJ, TSTG
-65~150, -65~175
1.
2.
Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
Reverse recovery time test condition, IF=0.5A, IR=1.0A, IRR=0.25A.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Dec-2011 Rev. B
Page 2 of 3
SMF101M~SMF107M
50V ~ 1000 V
1.0 Amp Surface Mount Fast Recovery Rectifier
Elektronische Bauelemente
RATINGS AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
1.2
1.0
0.8
0.6
50
10
3.0
1.0
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
TJ=25 C
AMBIENT TEMPERATURE ( C)
Pulse Width 300us
1% Duty Cycle
0.1
.01
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
50
.6
.8 1.0 1.2 1.4 1.6 1.8 2.0
FORWARD VOLTAGE,(V)
40
30
20
10
0
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
8.3ms Single Half
TJ=25 C
Sine Wave
50
NONINDUCTIVE
10
NONINDUCTIVE
JEDEC method
(
)
(+)
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
50
1
5
10
100
(
)
(+)
NUMBER OF CYCLES AT 60Hz
1
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
30
25
20
trr
|
|
|
|
|
|
|
|
+0.5A
0
15
10
5
-0.25A
-1.0A
0
.01
.05
.1
.5
1
5
10
50
100
1cm
SET TIME BASE FOR
50 / 10ns / cm
REVERSE VOLTAGE,(V)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Dec-2011 Rev. B
Page 3 of 3
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