SMG2325 [SECOS]
N-Channel Enhancement Mode MOSFET;
| 型号： | SMG2325 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode MOSFET |
| 文件： | 总4页 (文件大小：390K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
SC-59
DESCRIPTION
The SMG2325 is the N-Channel logic enhancement
A
L
mode power filed effect transistors are produced using
high Cell density, DMOS trench technology. This high
density process is especially tailored to minimize on-state
Resistance
3
3
Top View
C B
1
1
2
2
K
F
E
D
FEATURES
H
J
G
ꢀ
Simple Drive Requirement
Small Package Outline
ꢀ
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
0.10 REF.
0.40 REF.
Max.
A
B
C
D
2.70
2.25
1.30
1.00
3.10
3.00
1.70
1.40
G
H
J
MARKING
2325
0.10
0.20
K
0.45
0.55
E
F
1.70
0.35
2.30
0.50
L
0.85
1.15
PACKAGE INFORMATION
TOP VIEW
Package
MPQ
3K
Leader Size
SC-59
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Ratings
250
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
TA=25°C
TA=70°C
0.45
Continuous Drain Current 1, VGS@10V
ID
A
0.35
Pulsed Drain Current 2
IDM
P D
1.4
A
W
°C
Power Dissipation 3
TA=25°C
0.8
Operating Junction and Storage Temperature Range
Tj, Tstg
-55~150
Thermal Resistance Rating
Maximum Junction to Ambient 1
RθJA
156
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 1 of 4
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
IGSS
250
-
-
-
-
-
-
-
-
V
V
VGS=0, ID=250µA
VDS=VGS, ID=250µA
VGS 20V
1.5
3.5
Gate-Body Leakage Current
Drain-Source Leakage Current
-
-
-
-
-
±
100
1
nA
µA
=±
IDSS
VDS=250V, VGS=0
VGS=10V, ID=0.45A
VGS=4.5V, ID=0.35A
IS=0.45A, VGS=0
1.7
1.9
1.2
Drain-Source On-Resistance 1
Diode Forward Voltage1
RDS(ON)
VSD
Ω
V
Dynamic
VDS=200V,VGS=10V, ID=0.45A
Total Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain (‘‘Miller’’) Charge
Turn-on Delay Time1
Rise Time
Qg
Qg
-
-
-
-
-
-
-
-
-
-
-
30
17
3
-
-
-
-
-
-
-
-
-
-
-
VDS=200V,
VGS=4.5V,
ID=0.45A
nC
Qgs
Qgd
Td(on)
Tr
12
19
4
VDD=125V,
VGS=10V,
RG=6Ω,
RL=125Ω,
ID=0.45A
nS
pF
Turn-off Delay Time
Fall Time
Td(off)
Tf
48
13
1170
36
10
Input Capacitance
Output Capacitance
Ciss
Coss
Crss
VGS=0,
VDS=15V,
f=1.0MHz
Reverse Transfer Capacitance
Notes:
1. Surface mounted on a 1 inch2 FR-4 board with 2OZ copper. ;270°C /W when mounted on min. copper pad.
2. The data tested by pulsed , pulse width ≦300us , duty cycle ≦2%
3. The power dissipation is limited by 150°C juncti on temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 2 of 4
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 3 of 4
SMG2325
0.45A , 250V , RDS(ON) 1.7Ω
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Aug-2011 Rev. A
Page 4 of 4
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