SMG2370N [SECOS]

N-Channel Enhancement Mode Mos.FET;


型号：	SMG2370N
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N-Channel Enhancement Mode Mos.FET
文件：	总2页 (文件大小：142K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SMG2370N

1.8 A, 100 V, R_DS(ON)280 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen and lead-free

DESCRIPTION

SC-59

These miniature surface mount MOSFETs utilize a High

Cell Density trench process to provide Low R_DS(on)and to

ensure minimal power loss and heat dissipation. Typical

applications are DC-DC converters and power management

in portable and battery-powered products such as computers,

printer , PCMCIA cards, cellular and cordless telephones.

Top View

C B

FEATURES



Low R_DS(on)provides higher efficiency and extends

battery life.



Low thermal impedance copper leadframe SC-59

saves board Space.

Millimeter

Min. Max.

0.10 REF.

0.40 REF.

REF.

Min.

Max.

3.10

3.00

1.70

1.40



Fast switching speed.

High performance trench technology.

2.70

2.25

1.30

1.00

0.10

0.45

0.85

0.20

0.55

1.15

1.70

0.35

2.30

0.50

PACKAGE INFORMATION

Package

MPQ

LeaderSize

SC-59

7’ inch

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

Ratings

Unit

Drain-Source Voltage

Gate-Source Voltage

Continuous Drain Current ¹

Pulsed Drain Current ²

V_DS

V_GS

I_D

I_DM

I_S

100

±20

1.8

±10

1.1

I_D@ T_A=25°C

P_D@ T_A=25°C

Continuous Source Current (Diode Conduction) ¹

Power Dissipation ¹

P_D

Tj, Tstg

1.3

-55 ~ 150

°C

Operating Junction and Storage Temperature Range

Thermal Resistance Ratings

Symbol

Parameter

Typ

Max

Unit

t ≦ 10 sec

130

110

150

Maximum Junction to Ambient ¹

R_JA

°C / W

Steady State

Notes

Surface Mounted on 1” x 1” FR4 Board.

Pulse width limited by maximum junction temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Dec-2010 Rev. A

Page 1 of 2

SMG2370N

1.8 A, 100 V, R_DS(ON)280 m

N-Channel Enhancement Mode Mos.FET

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T_A= 25°C unless otherwise specified)

Parameter

Symbol Min. Typ. Max. Unit

Static

Test Conditions

Gate-Threshold Voltage

Gate-Body Leakage

V_GS(th)

I_GSS

1.0

±100

V_DS=V_GS, I_D= 250uA

nA V_DS= 0V, V_GS= ±8V

V_DS= 80V, V_GS= 0V

A

Zero Gate Voltage Drain Current

On-State Drain Current ¹

I_DSS

V_DS= 80V, V_GS= 0V, T_J= 55°C

I_D(on)

V_DS= 5V, V_GS= 10V

V_GS= 10V, I_D= 1.8A

V_GS= 5.5V, I_D= 1.6A

V_DS= 10V, I_D= 1.8A

I_S= 1.6A, V_GS= 0V

280

355

Drain-Source On-Resistance ¹

R_DS(ON)

mΩ

Forward Transconductance ¹

Diode Forward Voltage

g_fs

11.3

0.75

V_SD

Dynamic ²

Total Gate Charge

Gate-Source Charge

Gate-Drain Charge

Turn-on Delay Time

Rise Time

Q_g

Q_gs

Q_gd

T_d(on)

T_r

7.0

1.1

2.0

V_DS= 10V, V_GS= 5.5V,

I_D= 1.8A

V_DD= 10V, V_GEN= 4.5V,

R_L= 15, I_D= 1A

Turn-off Delay Time

T_d(off)

T_f

Fall Time

Notes

Pulse test：PW ≦ 300 us duty cycle ≦ 2%.

Guaranteed by design, not subject to production testing.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

30-Dec-2010 Rev. A

Page 2 of 2

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