SMS501DE [SECOS]
N-Ch Enhancement Mode Power MOSFET;
| 型号： | SMS501DE |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：438K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMS501DE
0.03A , 600V , RDS(ON) 700
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen free
SOT-23
DESCRIPTION
The SMS501DE is the highest performance trench
N-ch MOSFETs with extreme high cell density , which provide
excellent RDS(on) and gate charge for most of the synchronous
buck converter applications .
A
L
3
3
Top View
C B
1
1
2
2
K
F
E
FEATURES
ꢀ
ꢀ
ꢀ
ꢀ
Advanced high cell density Trench technology
Super Low Gate Charge
Excellent CdV/dt effect decline
Green Device Available
D
H
J
G
Millimeter
Millimeter
REF.
REF.
Min.
Max.
3.10
2.65
1.40
1.15
2.04
0.50
Min.
Max.
0.18
0.65
0.20
A
B
C
D
E
F
2.70
2.10
1.20
0.89
1.78
0.30
G
H
J
K
L
0.09
0.35
0.08
MARKING
0.6 REF.
0.95 BSC.
501DE
PACKAGE INFORMATION
Package
MPQ
3K
Leader Size
SOT-23
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
VDS
Rating
600
Unit
V
Drain-Source Voltage
Gate-Source Voltage
VGS
±20
V
0.03
A
TC=25°C
Continuous Drain Current
Pulsed Drain Current
ID
IDM
TC=100°C
0.024
0.12
A
A
TC=25°C
Derate above 25°C
0.5
Total Power Dissipation
PD
W
°C
0.004
-55~150
Operating Junction and Storage Temperature Range
TJ, TSTG
Thermal Resistance Rating
Maximum Thermal Resistance Junction-Ambient
Maximum Thermal Resistance Junction-Case
RθJA
RθJC
250
50
°C / W
°C / W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 1 of 4
SMS501DE
0.03A , 600V , RDS(ON) 700
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Typ. Max.
Unit
Teat Conditions
Drain-Source Breakdown Voltage
Drain-Source Leakage Current
Gate-Source Leakage Current
Gate-Threshold Voltage
BVDSS
ID(OFF)
IGSS
600
-
-
-
V
µA
nA
V
VGS=5V, ID= 250µA
VGS=5V, VDS=600V
VGS= ±20V
-
0.1
-
-
±100
VGS(th)
IDSS
-2.7
-
-1
VDS=3V, ID=8µA
Drain-Source Leakage Current
12
-
-
-
mA VDS=25V, VGS=0
310
330
1.8
0.75
0.56
18
90
93
210
99
9.1
5
700
VGS=0V, ID=3mA
Ω
Static Drain-Source On-Resistance
RDS(ON)
-
700
VGS=10V, ID=16mA
Total Gate Charge 1.2
Gate-Source Charge 1.2
Gate-Drain Change 1.2
Turn-on Delay Time 1.2
Rise Time 1.2
Qg
Qgs
Qgd
Td(on)
Tr
-
-
-
-
-
-
-
-
-
-
-
ID=0.01A
nC
nS
pF
VDS=4000V
GS=5V
-
V
-
-
VDD=300V
ID=0.01A
VGS=-5V
VGS=7V
RG=6Ω
-
Turn-off Delay Time 1.2
Fall Time 1.2
Td(off)
Tf
-
-
Input Capacitance
Ciss
Coss
Crss
-
VGS =5V
V
DS=25V
Output Capacitance
Reverse Transfer Capacitance
-
f =1.0MHz
-
Source-Drain Diode
Diode Forward Voltage
Continuous Source Current
Pulsed Source Current
Reverse Recovery Time
Reverse Recovery Charge
VSD
-
-
-
-
-
-
-
-
-
-
1.2
0.03
0.12
367
963
V
A
IS=16mA, VGS=5v
Integral Reverse P-N
Junction Diode in the
MOSFET
IS
ISM
Trr
Qrr
A
ns
µC
IF=0.01A,VR=300V,
dlF/dt=100A/µS
Notes:
1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%
2. Essentially independent of operating temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 2 of 4
SMS501DE
0.03A , 600V , RDS(ON) 700
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 3 of 4
SMS501DE
0.03A , 600V , RDS(ON) 700
Ω
N-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
28-Oct-2013 Rev. A
Page 4 of 4
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