SPR45P03_15 [SECOS]
P-Channel Enhancement Mode Power MOSFET;
| 型号： | SPR45P03_15 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：364K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SPR45P03
-45A , -30V , RDS(ON) 15 mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
PR-8PP
DESCRIPTION
The SPR45P03 provide the designer with the best
combination of fast switching, ruggedized device design, low
on-resistance and cost-effectiveness. The PR-8PP package
is universally preferred for all commercial-industrial surface
mount applications and suited for low voltage applications
such as DC/DC converters.
FEATURES
ꢀ
ꢀ
ꢀ
Lower Gate Charge
Simple Drive Requirement
Fast Switching Characteristic
MARKING
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
4.9
5.7
5.95
1.27 BSC.
0.35
0.1
5.1
5.9
6.2
G
H
I
J
K
L
0.8
0.254 Ref.
4.0 Ref.
3.4 Ref.
0.6 Ref.
1.4 Ref.
1.0
45P03
ꢁꢁꢁꢁ
ꢁ
= Date code
0.49
0.2
PACKAGE INFORMATION
Package
MPQ
3K
Leader Size
PR-8PP
13 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Symbol
VDS
Rating
-30
Unit
V
V
A
Gate-Source Voltage
VGS
±20
TC=25°C
TC=100°C
TA=25°C
TA=70°C
-45
-30
A
Continuous Drain Current 1@VGS=10V
ID
-9.6
A
-7.7
A
Pulsed Drain Current 2
Single Pulse Avalanche Energy 3
IDM
EAS
IAS
-150
264
A
mJ
A
Avalanche Current
-42
Total Power Dissipation 4
TC=25°C
P D
48
W
°C
Operating Junction & Storage Temperature
TJ, TSTG
-55~150
Thermal Resistance Rating
Thermal Resistance Junction-Ambient1(Max).
Thermal Resistance Junction-Case1(Max).
RθJA
RθJC
62
°C / W
°C / W
2.6
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-May-2014 Rev.A
Page 1 of 4
SPR45P03
-45A , -30V , RDS(ON) 15 mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Min.
Typ. Max.
Parameter
Unit
Teat Conditions
Static
-30
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
BVDSS
VGS(th)
gfs
-
-
-
V
V
VGS=0, ID= -250uA
-1
-2.5
VDS=VGS, ID= -250uA
VDS= -5V, ID= -30A
VGS= ±20V
Forward Tranconductance
Gate-Source Leakage Current
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
30
-
-
S
IGSS
±100
nA
-
-1
-5
15
25
18
-
VDS= -24V, VGS=0, TJ=25°C
VDS= -24V, VGS=0, TJ=55°C
VGS= -10V, ID= -30A
VGS= -4.5V, ID= -15A
f =1.0MHz
Drain-Source Leakage Current
IDSS
uA
-
-
Static Drain-Source On-Resistance 2
RDS(ON)
mΩ
-
Gate Resistance
Rg
Qg
9
Ω
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Change
Turn-on Delay Time 2
Rise Time
22
8.7
7.2
8
ID= -15A
VDS= -15V
VGS= -4.5V
Qgs
Qgd
Td(on)
Tr
-
nC
nS
pF
-
-
VDD= -15V
ID= -15A
73.7
61.8
24.4
2215
310
237
-
V
GS= -10V
Turn-off Delay Time
Fall Time
Td(off)
Tf
-
RG=3.3Ω
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
-
VGS =0
VDS= -15V
f =1.0MHz
-
-
Guaranteed Avalanche Characteristics
Single Pulse Avalanche Energy 5
EAS
66
-
-
mJ VDD= -25V, L=0.1mH, IAS= -21A
Source-Drain Diode
Diode Forward Voltage 2
Continuous Source Current 1,6
Pulsed Source Current 2,6
Reverse Recovery Time
VSD
IS
-
-
-
-
-
-
-
-1
-45
-150
-
V
A
IS= -1A, VGS=0V
VG=VD=0, Force Current
ISM
trr
-
A
19
9
nS
nC
IF= -15A, dl/dt=100A/µs,
TJ=25°C
Reverse Recovery Charge
Note:
Qrr
-
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper , ≦10sec , 125℃/W at steady state
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The EAS data shows Max. rating . The test condition is VDD= -25V,VGS= -10V,L=0.1mH,IAS= -50A
4. The power dissipation is limited by 150°C juncti on temperature
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-May-2014 Rev.A
Page 2 of 4
SPR45P03
-45A , -30V , RDS(ON) 15 mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-May-2014 Rev.A
Page 3 of 4
SPR45P03
-45A , -30V , RDS(ON) 15 mΩ
P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
19-May-2014 Rev.A
Page 4 of 4
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