SSD20N10-130D [SECOS]
N-Ch Enhancement Mode Power MOSFET;
| 型号： | SSD20N10-130D |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Ch Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：538K) |
| 下载： | 下载PDF数据表文档文件 |
SSD20N10-250D
N-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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15
SECOS
SSD20N15-250D
N-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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14
SECOS
SSD20P03-60
P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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21
SECOS
SSD20P04-60D
P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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12
SECOS
SSD20P06-135D
P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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16
SECOS
SSD20P15_15
P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SECOS
SSD20P15-295D
P-Ch Enhancement Mode Power MOSFETWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SECOS
SSD2101
TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 7A I(D) | SOWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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119
ETC
SSD2101
Power Field-Effect Transistor, 7A I(D), 30V, 0.03ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
SSD2102
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 5.3A I(D) | SOWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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66
ETC
SSD2102
Power Field-Effect Transistor, 5.3A I(D), 20V, 0.06ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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0
SAMSUNG
SSD2104
TRANSISTOR | MOSFET | P-CHANNEL | 30V V(BR)DSS | 4.6A I(D) | SOWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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34
ETC
SSD2104
Power Field-Effect Transistor, 4.6A I(D), 30V, 0.07ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
SSD2106
TRANSISTOR | MOSFET | P-CHANNEL | 20V V(BR)DSS | 2.5A I(D) | SOWarning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
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18
ETC
SSD2108
Power Field-Effect Transistor, 4.3A I(D), 20V, 0.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8Warning: Undefined variable $rtag in /www/wwwroot/www.icpdf.com/pdf/pdf/index.php on line 154
-
0
SAMSUNG
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