SSDF9510 [SECOS]
N And P-Channel Enhancement Mode Power MOSFET;
| 型号： | SSDF9510 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N And P-Channel Enhancement Mode Power MOSFET |
| 文件： | 总7页 (文件大小：1142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSDF9510
13A, 100V, RDS(ON) 110mΩ
-13A, -100V, RDS(ON) 210mΩ
N And P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
TO-252-4L
The SSDF9510 provide the designer with best combination
of fast switching, low on-resistance and cost effectiveness.
The SSDF9510 meet the RoHS and Green Product requirement ,
100% EAS guaranteed with full function reliability approved.
FEATURES
ꢀ
Low Gate Charge
Low On-resistance
ꢀ
MARKING CODE
9 5 1 0
ꢀꢀꢀꢀ
ꢁ
ꢀ
= Date Code
PACKAGE INFORMATION
Millimeter
REF.
Millimeter
Min. Max.
REF.
Min.
Max.
6.8
Package
MPQ
2.5K
Leader Size
A
B
C
D
E
6.4
9.4
5.4
2.4
F
G
H
I
0.4
2.2
0.6
2.4
10.2
5.8
3.0
0.45
1.4
0.55
1.8
TO-252-4L
13 inch
1.27 REF.
J
0.8
1.2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Ratings
Parameter
Symbol
Unit
N-Channel
100
±20
13
P-Channel
-100
±20
Drain-Source Voltage
VDS
VGS
V
V
Gate-Source Voltage
TC =25°C
-13
Continuous Drain Current
@ VGS=10V 1
ID
A
TC =100°C
10.5
48
-10
Pulsed Drain Current 2
IDM
EAS
-48
A
mJ
Single Pulse Avalanche Energy 3
50
50
Avalanche Current
IAS
10
-10
A
Power Dissipation 4
PD
35.7
W
Maximum Junction to Ambient 1
Maximum Junction to Case 1
RθJA
RθJC
TJ, TSTG
62.5
3.5
°C / W
°C / W
°C
Operating Junction & Storage Temperature Range
-55~150
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Nov-2012 Rev. A
Page 1 of 7
SSDF9510
13A, 100V, RDS(ON) 110mΩ
-13A, -100V, RDS(ON) 210mΩ
N And P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Static
Typ.
Max.
Unit
Test Conditions
VGS=0, ID=250µA
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
100
-
-
-
-
Drain-Source Breakdown
Voltage
BVDSS
VGS(th)
IGSS
V
V
-100
VGS=0, ID= -250µA
VDS=VGS, ID=250µA
VDS=VGS, ID= -250µA
1
-1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2.5
-2.5
±100
Gate-Threshold Voltage
-
-
Gate-Source Leakage Current
nA VGS= ±20V
VDS=80V, VGS=0, TJ=25°C
-
±
100
1
-
-
-1
5
VDS= -80V, VGS=0, TJ=25°C
VDS=80V, VGS=0, TJ=55°C
VDS= -80V, VGS=0 , TJ=55°C
VGS=10V, ID=8A
Drain-Source Leakage Current
Drain-Source On-Resistance 2
IDSS
µA
-
-
-5
-
110
-
210
VGS= -10V, ID= -8A
RDS(ON)
mΩ
-
120
VGS=4.5V, ID=6A
-
250
VGS= -4.5V, ID= -6A
26.2
16
4.6
4.4
5.1
8.7
4.2
9
-
-
Total Gate Charge
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-on Delay Time
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
N-Channel
VDS=80V, VGS=10V, ID=10A
-
nC
-
P-Channel
VDS= -80V, VGS= -4.5V, ID= -8A
-
-
-
N-Channel
VDS=50V, RG=3.3Ω,RL=5Ω
VGS=10V, ID=10A
-
8.2
45
35.6
40
9.6
4.6
1535
1590
60
110
37
70
2
-
-
nS
-
P-Channel
VDS= -50V, RG=3.3Ω, RD=6.25Ω
VGS= -10V, ID= -8A
Turn-off Delay Time
Fall Time
Td(off)
-
-
Tf
-
-
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Ciss
Coss
Crss
Rg
N-Channel
VGS=0, VDS=15V, f=1.0MHz
-
-
pF
-
P-Channel
VGS=0, VDS= -15V, f=1.0MHz
-
-
4
12
Ω
VDS=VGS=0, f=1.0MHz
8
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Nov-2012 Rev. A
Page 2 of 7
SSDF9510
13A, 100V, RDS(ON) 110mΩ
-13A, -100V, RDS(ON) 210mΩ
N And P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Test Conditions
Guaranteed Avalanche Chatacteristics
N-Ch
P-Ch
10
10
-
-
-
-
VDD=50V, L=1mH, IAS=5A
Single Pulse Avalanche Energy 5
EAS
mJ
VDD= -50V, L=1mH,IAS = -5A
Source-Drain Diode
N-Ch
P-Ch
N-Ch
P-Ch
N-Ch
P-Ch
-
-
-
-
-
-
-
-
-
-
-
-
1.2
-1.2
13
IS=1A, VGS=0, TJ=25°C
IS= -1A, VGS=0, TJ=25°C
Forward On Voltage2
VSD
V
A
A
Continuous Source Current 1,6
IS
-13
48
VD=VG=0, Force Current
Pulsed Source Current 2,6
Notes:
ISM
-48
1
2
Surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
Pulse width≦300µs, duty cycle≦2%.
3 The EAS data shows Max. rating . The test condition is VDD=±50V,VGS=±10V,L=1mH,IAS=±10A
4 .The power dissipation is limited by 150 °C junct ion temperature
5 The Min. value is 100% EAS tested guarantee.
6 The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Nov-2012 Rev. A
Page 3 of 7
SSDF9510
13A, 100V, RDS(ON) 110mΩ
-13A, -100V, RDS(ON) 210mΩ
N And P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Nov-2012 Rev. A
Page 4 of 7
SSDF9510
13A, 100V, RDS(ON) 110mΩ
-13A, -100V, RDS(ON) 210mΩ
N And P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Nov-2012 Rev. A
Page 5 of 7
SSDF9510
13A, 100V, RDS(ON) 110mΩ
-13A, -100V, RDS(ON) 210mΩ
N And P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Nov-2012 Rev. A
Page 6 of 7
SSDF9510
13A, 100V, RDS(ON) 110mΩ
-13A, -100V, RDS(ON) 210mΩ
N And P-Channel Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
14-Nov-2012 Rev. A
Page 7 of 7
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