SSG4228 [SECOS]
Dual-N Enhancement Mode Power MOSFET; 双-N增强型功率MOSFET
| 型号： | SSG4228 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | Dual-N Enhancement Mode Power MOSFET |
| 文件： | 总4页 (文件大小：818K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4228
6.8A, 30V, RDS(ON) 26m
Dual-N Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOP-8
DESCRIPTION
The SSG4228 provide the designer with the best
B
Combination of fast switching, ruggedized device design,
Ultra low on-resistance and cost-effectiveness.
L
D
FEATURES
M
Low on-resistance
Simple Drive Requirement
Double-N MosFET Package
A
C
J
N
E
K
H
G
F
MARKING CODE
Millimeter
Min. Max.
Millimeter
REF.
REF.
Min.
Max.
4228SS
A
B
C
D
E
F
5.80
4.80
3.80
0°
6.20
5.00
4.00
8°
H
J
K
L
M
N
0.35
0.49
= Date Code
0.375 REF.
45°
1.35
0.10
1.75
0.25
0.40
0.19
0.90
0.25
0.25 REF.
G
1.27 TYP.
PACKAGE INFORMATION
Package
MPQ
3K
LeaderSize
S
G
S
D
D
D
D
SOP-8
13’ inch
G
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Symbol
Ratings
Unit
Drain-Source Voltage
Gate-Source Voltage
VDS
30
V
VGS
±20
6.8
V
TA = 25°C
TA = 70°C
Continuous Drain Current 3
ID
A
5.5
Pulsed Drain Current 1
Power Dissipation 1
IDM
PD
40
A
2
W
Maximum Junction to Ambient 3
RθJA
62.5
0.016
-55~150
°C / W
W / °C
°C
Linear Derating Factor
Operating Junction & Storage Temperature Range
TJ, TSTG
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 1 of 4
SSG4228
6.8A, 30V, RDS(ON) 26m
Dual-N Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Static
Max.
Unit
Test condition
Drain-Source Breakdown Voltage
BVDSS
30
-
-
-
-
V
VGS=0V, ID=250μA
Breakdown Voltage Temp.
Coefficient
△BVDS/△Tj
0.03
V / °C Reference to 25°C, ID =1mA
Gate-Threshold Voltage
Gate-Body Leakage
VGS(th)
IGSS
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
3
V
VDS=VGS, ID =250μA
VGS=±20V
±100
nA
μA
μA
-
1
VDS=30V,VGS=0
VDS=24V,VGS=0
VGS=10V, ID =6A
VGS=4.5V, ID =4A
Zero Gate Voltage Drain Current
Drain-Source On-Resistance 2
IDSS
-
25
-
26
RDS(ON)
mΩ
-
40
Total Gate Charge 2
Gate-Source Charge
Gate-Drain (“Miller”) Charge
Turn-On Delay Time 2
Rise Time
Qg
Qgs
Qgd
Td(on)
Tr
9
15
ID= 6.8A
VDS= 24V
nC
2
-
VGS= 4.5V
6
-
10
9
-
VDS= 15V
ID= 1A
VGS= 10V
RG= 3.3Ω
-
nS
Turn-Off Delay Time
Fall Time
Td(off)
Tf
18
6
-
RD= 15Ω
-
Input Capacitance
Ciss
Coss
Crss
Gfs
580
150
108
15
930
VGS=0V
VDS=25V
f=1.0MHz
pF
S
Output Capacitance
Reverse Transfer Capacitance
Forward Transfer Conductance
-
-
-
VDS=10V, ID=6A
Source-Drain Diode
Forward On Voltage 2
VDS
Trr
-
-
-
-
1.3
V
IS=1.7A, VGS=0V, Tj=25°C
Reverse Recovery Time 2
15
9
-
-
nS
nC
IS =6.8A, VGS =0V
dl/dt=100A/μs
Reverse Recovery Charge
Notes:
Qrr
1
2
3
Pulse width limited by Max. junction temperature.
Pulse width 300us, duty cycle 2%.
Surface mounted on 1 inch2 copper pad of FR4 board; 135°C/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 2 of 4
SSG4228
6.8A, 30V, RDS(ON) 26m
Dual-N Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 3 of 4
SSG4228
6.8A, 30V, RDS(ON) 26m
Dual-N Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
18-Feb-2011 Rev. B
Page 4 of 4
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