SSG4542C [SECOS]
N & P-Ch Enhancement Mode Power MOSFET; N' P沟道增强型功率MOSFET
| 型号： | SSG4542C |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N & P-Ch Enhancement Mode Power MOSFET |
| 文件： | 总6页 (文件大小：941K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG4542C
N-Ch: 8.3 A, 40 V, RDS(ON) 14 m
P-Ch: -7.6 A, -40 V, RDS(ON) 28 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SOP-8
These miniature surface mount MOSFETs
utilize a high cell density trench process to provide low
R
DS(on) and to ensure minimal power loss and heat
B
dissipation. Typical applications are DC-DC
converters and power management in portable and
battery-powered products such as computers,
printers, PCMCIA cards, cellular and cordless
telephones.
L
D
M
A
C
J
FEATURES
Low RDS(on) provides higher efficiency and extends
battery life.
N
E
K
H
G
F
Low thermal impedance copper leadframe SOP-8
saves board space
Fast switching speed
High performance trench technology
Millimeter
Min. Max.
5.8 6.20
Millimeter
REF.
REF.
Min.
Max.
A
B
C
D
E
F
H
J
K
L
M
N
0.35
0.51
4.80
3.80
0°
5.00
4.00
8°
0.375 REF.
45°
PACKAGE INFORMATION
1.35
0.10
1.75
0.25
0.50
0.93
0.19
0.25
0.25 REF.
Package
MPQ
LeaderSize
G
1.27 TYP.
SOP-8
2.5K
13’ inch
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Drain-Source Voltage
SYMBOL
VDS
N-CH
40
P-CH
-40
Unit
V
Gate-Source Voltage
VGS
20
-20
V
ID @ TA = 25°C
ID @ TA = 70°C
IDM
8.3
6.8
±50
2.3
2.1
1.3
-7.6
-6.3
±50
-2.1
2.1
A
Continuous Drain Current 1
A
Pulsed Drain Current 2
Continuous Source Current (Diode Conduction) 1
A
IS
A
PD @ TA = 25°C
PD @ TA = 70°C
TJ, TSTG
W
W
°C
Total Power Dissipation 1
1.3
Operating Junction & Storage Temperature Range
-55 ~ 150
Thermal Resistance Ratings
t≦ 10 sec
RθJA
62.5
110
°C / W
°C / W
Maximum Junction-to-Ambient 1
Steady State
Notes:
1.
2.
Surface Mounted on 1” x 1” FR4 Board.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 1 of 6
SSG4542C
N-Ch: 8.3 A, 40 V, RDS(ON) 14 m
P-Ch: -7.6 A, -40 V, RDS(ON) 28 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Ch
Min.
Typ.
Static
Max.
Unit
Teat Conditions
N
1
1.5
-1.4
6
3
-3
VDS= VGS, ID= 250μA
DS= VGS, ID= -250μA
VDS= 0V, VGS= 20V
DS= 0V, VGS= -20V
VDS= 32V, VGS= 0V
DS= -32V, VGS= 0V
VDS= 5V, VGS= 10V
DS= -5V, VGS= -10V
VGS= 10V, ID= 8.3A
GS= 4.5V, ID= 7.3A
Gate Threshold Voltage
VGS(th)
V
nA
μA
A
P
-1
V
N
-
±100
±100
1
Gate-Body Leakage Current
Zero Gate Voltage Drain Current
On-State Drain Current 1
IGSS
P
-
7
V
N
-
2nA
12nA
-
IDSS
P
-
-1
V
N
25
-
ID(on)
P
-50
-
-
V
-
-
-
-
-
-
14
17
28
35
40
31
22
27
30
40
-
N
RDS(ON)
P
V
Drain-Source On-Resistance 1
Forward Transconductance 1
mΩ
VGS= -10V, ID= -7.6A
VGS= -4.5V, ID= -6.2A
VDS= 15V, ID= 8.3A
N
gfs
S
P
-
VDS= -15V, ID= -7.6A
Dynamic 2
N
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
13
30
30
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Qg
P
14
N-Channel
ID= 8.3A, VDS= 15V, VGS= 4.5V
N
3.3
5.8
4.5
12
7
Qgs
nC
pF
P
12
P-Channel
ID= -7.6A, VDS= -15V, VGS= -4.5V
N
10
Qgd
P
30
N
1317
1583
272
278
169
183
20
3000
4000
600
600
400
400
40
Ciss
P
N-Channel
f= 1MHz, VDS= 15V, VGS= 0V
N
Coss
P
P-Channel
f= 1MHz, VDS= -15V, VGS= 0V
N
Crss
P
N
Td(on)
P
15
30
N-Channel
N
9
20
VDD= 15V, VGS= 10V
ID= 1A, RGEN= 25Ω
Tr
P
16
40
nS
N
70
200
200
40
P-Channel
Turn-Off Delay Time
Td(off)
VDD= -15V, VGS= -10V
P
62
ID= -1A, RGEN= 15Ω
N
20
Fall Time
Notes:
Tf
P
46
100
1.
2.
Pulse test：PW ≦ 300μs duty cycle ≦ 2%.
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 2 of 6
SSG4542C
N-Ch: 8.3 A, 40 V, RDS(ON) 14 m
P-Ch: -7.6 A, -40 V, RDS(ON) 28 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES (N-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 3 of 6
SSG4542C
N-Ch: 8.3 A, 40 V, RDS(ON) 14 m
P-Ch: -7.6 A, -40 V, RDS(ON) 28 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 4 of 6
SSG4542C
N-Ch: 8.3 A, 40 V, RDS(ON) 14 m
P-Ch: -7.6 A, -40 V, RDS(ON) 28 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES (P-Channel)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 5 of 6
SSG4542C
N-Ch: 8.3 A, 40 V, RDS(ON) 14 m
P-Ch: -7.6 A, -40 V, RDS(ON) 28 m
N & P-Ch Enhancement Mode Power MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
27-Dec-2010 Rev. B
Page 6 of 6
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