SSG9973 [SECOS]
N-Channel Enhancement Mode Power Mos.FET; N沟道增强模式电源Mos.FET
| 型号： | SSG9973 |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel Enhancement Mode Power Mos.FET |
| 文件： | 总4页 (文件大小：342K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSG9973
3.9A, 60V,RDS(ON) 80m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
RoHS Compliant Product
SOP-8
Description
0.19
0.25
0.40
0.90
o
The SSG9973 provide the designer with the best combination of fast switching,
ruggedized device design, low on-resistance and cost-effectiveness.
0.375 REF
6.20
5.80
0.25
3.80
4.00
1.27Typ.
0.35
0.49
0.100.25
4.80
5.00
1.35
1.75
o
8 o
Features
Dimensions in millimeters
D1 D1 D2 D2
* Simple drive requirement
8
6
5
7
D1
D2
* Low gate charge
9973SS
Date Code
G1
G2
2
1
3
4
S2
S1
S1 G1
S2 G2
Absolute Maximum Ratings
Parameter
Drain-Source Voltage
Symbol
VDS
Ratings
Unit
V
60
±20
3.9
2.5
20
Gate-Source Voltage
VGS
V
A
Continuous Drain Current3, VGS@10V
Continuous Drain Current3, VGS@10V
Pulsed Drain Current1.2
к
ID@TA=25
ID@TA=70
IDM
к
A
A
к
Total Power Dissipation
PD@TA=25
Tj, Tstg
2.0
W
0.016
W/eC
eC
Linear Derating Factor
-55~+150
Operating Junction and Storage Temperature Range
Thermal Data
Parameter
Symbol
Ratings
Unit
Thermal Resistance Junction-ambient3 Max.
eC /W
Rthj-a
62.5
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 4
SSG9973
3.9A, 60V,RDS(ON) 80m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Electrical Characteristics( Tj=25oC Unless otherwise specified)
Parameter
Symbol
Max.
Min.
Typ.
Unit
Test Condition
_
_
VGS=0V, ID=250uA
60
_
BVDSS
V
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Reference to25o , ID=1mA
C
V/o
C
_
BVDS/ Tj
0.06
_
V
VGS(th)
1.0
_
VDS=VGS, ID=250uA
3.0
_
_
±
± 0
VGS= 2 V
100
nA
uA
uA
IGSS
IDSS
Gate-Source Leakage Current
oC
_
VDS=60V,VGS=0
VDS=48V,VGS=0
Drain-Source Leakage Current (Tj=25 )
1
oC
_
_
_
_
_
Drain-Source Leakage Current (Tj=70 )
25
80
VGS=10V, ID=3.9A
VGS=4.5V, ID=2A
Static Drain-Source On-Resistance2
mΩ
RDS(ON)
_
_
100
Total Gate Charge2
13
_
Qg
8
2
4
8
4
ID=3.9A
_
_
VDS=48V
VGS=4.5V
nC
Gate-Source Charge
Qgs
_
_
Gate-Drain ("Miller") Charge
Qgd
_
_
Turn-on Delay Time2
Rise Time
Td(ON)
VDD=30V
ID=1A
_
_
_
Tr
VGS=10V
nS
_
Ω
RG=3.3
Td(Off)
Turn-off Delay Time
Fall Time
20
6
Ω
RD=30
_
_
_
_
T
f
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
700
80
50
3.5
Ciss
Coss
Crss
1120
_
VGS=0V
VDS=25V
f=1.0MHz
pF
S
_
_
_
VDS=10V, ID=3.9A
Gfs
Forward Transconductance
Source-Drain Diode
Parameter
Forward On Voltage2
Symbol
VDS
Max.
Min.
Typ.
Unit
Test Condition
_
_
IS=3.9A , VGS=0V.
V
1.2
_
_
_
Trr
nS
nC
28
35
Reverse Recovery Time
Reverse Recovery Charge
IS=3.9A , VGS=0V.
dl/dt=100A/us
_
Qrr
Notes: 1.Pulse width limited by safe operating area.
2.Pulse width 300us, dutycycle 2%.
≦
≦
3.Surface mounted on 1 inch2 copper pad of FR4 board; 125OC/W when mounted on min. copper pad.
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 4
SSG9973
3.9A, 60V,RDS(ON) 80m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Characteristics Curve
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
Fig 3. On-Resistance v.s. Gate Voltage
Fig 5. Forward Characteristics of
Reverse Diode
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 3 of 4
SSG9973
3.9A, 60V,RDS(ON) 80m
Ω
Elektronische Bauelemente
N-Channel Enhancement Mode Power Mos.FET
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
Fig 10. Effective Transient Thermal Impedance
Fig 9. Maximum Safe Operating Area
Fig 11. Switching Time Waveform
Fig 12. Gate Charge Waveform
http://www.SeCoSGmbH.com/
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 4 of 4
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