SSK3018K [SECOS]
N-Channel MOSFET; N沟道MOSFET
| 型号： | SSK3018K |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | N-Channel MOSFET |
| 文件： | 总3页 (文件大小：800K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSK3018K
100mA, 30V
N-Channel MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
SOT-323
DESCRIPTION
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Low on-resistance
Fast switching speed
Low voltage drive (2.5V) makes this device ideal for portable equipment
Easily designed drive circuits
Easy to parallel
A
L
3
3
Top View
E
C B
1
1
2
2
K
F
3 DRAIN
D
H
J
G
FEATURES
ꢀ
Simple drive requirement
Small package outline
Millimeter
Min. Max.
Millimeter
REF.
REF.
ꢀ
Min.
Max.
0.100 REF.
0.525 REF.
1
A
B
C
D
E
F
1.80
1.80
1.15
0.80
1.20
0.20
2.20
2.45
1.35
1.10
1.40
0.40
G
H
J
K
L
GATE
0.08
-
0.25
-
*Gate
Protection
Diode
DEVICE MARKING: KN
0.650 TYP.
2 SOURCE
MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
PARAMETER
Drain – Source Voltage
SYMBOL
RATING
UNIT
V
VDS
30
Gate – Source Voltage
VGS
±20
V
Continuous Drain Current
ID
100
mA
mA
mW
°C
Pulsed Drain Current (tp≦10µS)
Power Dissipation *
IDM
400
PD
200
Operating Junction & Storage Temperature Range
Note: With each pin mounted on the recommended lands.
TJ, TSTG
150, -55~150
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
PARAMETER
SYMBOL
MIN
TYP
MAX
UNIT
TEST CONDITION
STATIC CARACTERISTICS
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
V(BR)DSS
VGS(TH)
IGSS
30
0.8
-
-
-
1.5
±1.0
1.0
8.0
13
V
V
VGS=0V, ID =10µA
VDS= 3V, ID =100µA
VGS=±20V
-
-
Gate-Source Leakage Current
Drain-Source Leakage Current
µA
µA
IDSS
-
-
VDS=30V, VGS=0V
VGS=4V, ID=10mA
VGS=2.5V, ID=1mA
VDS=3V, ID=10mA
-
5.0
7.0
-
Static Drain-Source On-Resistance
Forward Transconductance
RDS(ON)
gFS
Ω
-
20
-
ms
DYNAMIC CHARACTERISTICS
Input Capacitance
CISS
COSS
CRSS
-
-
-
13
9
-
-
-
VDS=5V
VGS=0V
f=1MHz
pF
nS
Output Capacitance
Reverse Transfer Capacitance
4
SWITCHING CHARACTERISTICS
Turn-on Delay Time
Rise Time
Td(ON)
TR
-
-
-
-
15
35
80
80
-
-
-
-
VGS=5V
I D=10mA
RL=500Ω
RG=10Ω
Turn-off Delay Time
Fall Time
Td(OFF)
TR
10-Jan-2010 Rev. A
Page 1 of 3
SSK3018K
100mA, 30V
N-Channel MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
10-Jan-2010 Rev. A
Page 2 of 3
SSK3018K
100mA, 30V
N-Channel MOSFET
Elektronische Bauelemente
CHARACTERISTIC CURVES
10-Jan-2010 Rev. A
Page 3 of 3
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