SSRF10N60SL [SECOS]

N-Ch Enhancement Mode Power MOSFET;


型号：	SSRF10N60SL
厂家：	SECOS HALBLEITERTECHNOLOGIE GMBH
描述：	N-Ch Enhancement Mode Power MOSFET
文件：	总5页 (文件大小：489K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

SSRF10N60SL

10A , 600V , R_DS(ON)

1Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

RoHS Compliant Product

A suffix of “-C” specifies halogen free

ITO-220

DESCRIPTION

The SSRF10N60SL is the highest performance trench

N-ch MOSFETs with extreme high cell density , which provide

excellent R_DS(on)and gate charge for most of the synchronous

buck converter applications .

FEATURES

ꢀ

Advanced high cell density Trench technology

Super Low Gate Charge

Excellent CdV/dt effect decline

100% EAS Guaranteed

Green Device Available

Drain

Millimeter

Min. Max.

REF.

Gate

Min.

Max.

16.50

10.50

14.00

5.10

3.2

14.60

9.50

12.60

4.30

2.30

0.30

2.70

0.90

0.50

2.34

2.40

φ 3.0

4.00

1.50

0.95

2.74

3.60

φ 3.4

3.10

0.75

Source

ABSOLUTE MAXIMUM RATINGS (T_A=25°C unless otherwise specified)

Parameter

Symbol

V_DS

Rating

600

±30

Unit

Drain-Source Voltage

Gate-Source Voltage

V_GS

T_C=25°C

Continuous Drain Current

Pulsed Drain Current

I_D

T_C=100°C

I_DM

P_D

T_C=25°C

Derate above 25°C

Total Power Dissipation

0.4

Single Pulse Avalanche Energy ¹

E_AS

654

-55~150

°C

Operating Junction and Storage Temperature Range

T_J, T_STG

Thermal Resistance Rating

Maximum Thermal Resistance Junction-Ambient

Maximum Thermal Resistance Junction-Case

Notes:

R_θJA

R_θJC

120

2.5

°C / W

1. L=30mH,I_AS=6A, V_DD=150V, R_G=25Ω, Starting T_J=25°C

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Sep-2013 Rev. A

Page 1 of 5

SSRF10N60SL

10A , 600V , R_DS(ON)

1Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

ELECTRICAL CHARACTERISTICS (T_J= 25°C unless otherwise specified)

Parameter

Symbol

Min.

Static

Typ. Max.

Unit

Teat Conditions

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-Source Leakage Current

Drain-Source Leakage Current

Static Drain-Source On-Resistance

Total Gate Charge ^1.2

BV_DSS

V_GS(th)

I_GSS

I_DSS

R_DS(ON)

Q_g

600

V_GS=0, I_D= 250µA

V_DS=V_GS, I_D=250µA

V_GS= ±30V

±100

µA

Ω

V_DS=600V, V_GS=0

V_GS=10V, I_D=5A

0.75

19.38

6.26

6.55

32.33

60.40

58.67

38.67

1132

135

3.91

I_D=10A

V_DS=480V

V_GS=10V

Gate-Source Charge ^1.2

Gate-Drain Change ^1.2

Turn-on Delay Time ^1.2

Rise Time ^1.2

Q_gs

Q_gd

T_d(on)

T_r

T_d(off)

T_f

V_DD=300V

I_D=10A

R_G=25 Ω

Turn-off Delay Time ^1.2

Fall Time ^1.2

Input Capacitance

C_iss

V_GS=0

V_DS=25V

f =1.0MHz

Output Capacitance

C_oss

C_rss

Reverse Transfer Capacitance

Source-Drain Diode

Diode Forward Voltage

Continuous Source Current

Pulsed Source Current

V_SD

1.3

I_S=10A, V_GS=0

Integral Reverse P-N

Junction Diode in the

MOSFET

I_S

I_SM

T_rr

Q_rr

Reverse Recovery Time

535.39

4.6

µC

I_S=10A,V_GS=0,

dl_F/dt=100A/µS

Reverse Recovery Charge

Notes:

1. Pulse Test: Pulse width ≦300µS, Duty cycle≦2%

2. Essentially independent of operating temperature.

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Sep-2013 Rev. A

Page 2 of 5

SSRF10N60SL

10A , 600V , R_DS(ON)1Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Sep-2013 Rev. A

Page 3 of 5

SSRF10N60SL

10A , 600V , R_DS(ON)1Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

CHARACTERISTIC CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Sep-2013 Rev. A

Page 4 of 5

SSRF10N60SL

10A , 600V , R_DS(ON)1Ω

N-Ch Enhancement Mode Power MOSFET

Elektronische Bauelemente

TYPICAL TEST CURVES

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

25-Sep-2013 Rev. A

Page 5 of 5

相关型号：

SSRF10N60SL_15

N-Ch Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRF12N65SL

N-Ch Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRF12N65SL_15

N-Ch Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRF30N20-400

N-Ch Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRF4N60

4A , 600 V , RDS(ON) 2.4 N-Channel Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRF50P04-16

P-Ch Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRF60N10

N-Ch Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRF90N06

N-Ch Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRF90N06-10

N-Ch Enhancement Mode Power MOSFET

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

SECOS

SSRFREQBR

CERAMIC RESONATOR, 16 MHz - 60 MHz

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

KYOCERA AVX

SSRH24NH-25205

SINGLE PHASE EMI FILTER,

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

KEMET

SSRH24NH-50041

SINGLE PHASE EMI FILTER,

Warning: Undefined variable $rtag in /www/wwwroot/website_ic37/www.icpdf.com/pdf/pdf/index.php on line 217
-

KEMET