SUF11M_15 [SECOS]

1.0 Amp Surface Mount Super Fast Rectifiers;
SUF11M_15
型号: SUF11M_15
厂家: SECOS HALBLEITERTECHNOLOGIE GMBH    SECOS HALBLEITERTECHNOLOGIE GMBH
描述:

1.0 Amp Surface Mount Super Fast Rectifiers

文件: 总2页 (文件大小:152K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SUF11M~SUF18M  
50 ~ 600 V  
1.0 Amp Surface Mount Super Fast Rectifiers  
Elektronische Bauelemente  
RoHS Compliant Product  
A suffix of “-C” specifies halogen-free and RoHS Compliant  
DESCRIPTIONS  
z Batch process design, excellent power dissipation offers  
better reverse leakage current and thermal resistance.  
z Low profile surface mounted application in order to optimize board space.  
z Small plastic SMD package.  
z High surge and high current capability.  
z Superfast recovery time for switching mode application.  
z Glass-passivated chip junction.  
SOD-123M  
A
D
PACKAGING INFORMATION  
z Case: Molded plastic  
z Epoxy: UL94-V0 rate flame retardant  
z Weight: 0.0270 g (approximately)  
B
F
C
MARKING CODE  
E
E
Part Number  
Marking Code  
Part Number  
SUF16M  
SUF18M  
Marking Code  
Millimeter  
Millimeter  
Min. Max.  
3.60 (MAX.)  
0.80 (TYP.)  
0.30 (TYP.)  
REF.  
REF.  
Min.  
Max.  
3.90  
1.80  
1.70  
SUF11M  
SUF12M  
SUF14M  
S1  
S2  
S4  
S6  
S8  
A
B
C
3.50  
1.40  
1.30  
D
E
F
ELECTRICAL CHARACTERISTICS AND RATINGS (T = 25°C unless otherwise specified.)  
A
TESTING  
CONDITIONS  
PART NUMBERS  
SYMBOL  
UNITS  
PARAMETERS  
SUF11M  
SUF12M  
SUF14M  
SUF16M  
SUF18M  
Recurrent Peak  
Reverse Voltage (Max.)  
VRRM  
50  
100  
200  
400  
600  
V
RMS Voltage (Max.)  
VRMS  
VR  
35  
50  
70  
140  
200  
280  
400  
1.25  
420  
600  
1.70  
V
V
V
Reverse Voltage (Max.)  
Forward Voltage (Max.)  
100  
0.95  
VF  
IF = 1A  
Ambient  
temperature = 50°C  
Average Forward  
Rectified Current (Max.)  
IO  
1.0  
25  
A
8.3ms single half  
sine-wave  
superimposed on  
rated load (JEDEC  
method)  
Peak Forward Surge Current  
IFSM  
A
VR=VRRM, TA=25°C  
VR=VRRM, TA=100°C  
5.0  
DC Reverse Current at  
Rated DC Blocking Voltage (Max.)  
IR  
μA  
100  
Reverse Recovery Time  
tRR  
35  
42  
nS  
Junction – Ambient  
Thermal Resistance (Typ.)  
RθJA  
°C/W  
f=1MHz and  
applied 4V DC  
reverse voltage  
Junction Capacitance (Typ.)  
CJ  
10  
pF  
°C  
Storage and Operating  
Temperature Range  
TSTG, TJ  
-65 ~ 175, -55 to 150  
01-December-2008 Rev. A  
Page 1 of 2  
SUF11M~SUF18M  
50 ~ 600 V  
1.0 Amp Surface Mount Super Fast Rectifiers  
Elektronische Bauelemente  
RATINGS AND CHARACTERISTIC CURVES  
FIG.2-TYPICAL FORWARD CURRENT  
DERATING CURVE  
FIG.1-TYPICAL FORWARD  
CHARACTERISTICS  
10  
1.2  
1.0  
0.8  
14-M  
F
-M~SU  
1
1
F
16-M  
F
1.0  
.1  
SU  
Single Phase  
0.6  
SU  
Half Wave 60Hz  
Resistive Or Inductive Load  
0.4  
8-M  
1
F
SU  
0.2  
0
0
25  
50  
75  
100  
125  
150  
175  
AMBIENT TEMPERATURE ( C)  
TJ=25 C  
Pulse Width 300us  
1% Duty Cycle  
.01  
.001  
FIG.4-MAXIMUM NON-REPETITIVE FORWARD  
SURGE CURRENT  
30  
24  
18  
12  
6
1.6 1.8  
.4  
.6  
.8  
1.0 1.2 1.4  
FORWARD VOLTAGE,(V)  
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE  
RECOVERY TIME CHARACTERISTICS  
8.3ms Single Half  
TJ=25 C  
Sine Wave  
50  
W
10W  
NONINDUCTIVE  
NONINDUCTIVE  
JEDEC method  
(
)
(+)  
D.U.T.  
25Vdc  
(approx.)  
PULSE  
GENERATOR  
(NOTE 2)  
0
50  
1
5
10  
100  
(
)
(+)  
NUMBER OF CYCLES AT 60Hz  
1W  
NON-  
INDUCTIVE  
OSCILLISCOPE  
(NOTE 1)  
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.  
2. Rise Time= 10ns max., Source Impedance= 50 ohms.  
FIG.5-TYPICAL JUNCTION CAPACITANCE  
70  
trr  
60  
50  
40  
|
|
|
|
|
|
|
|
+0.5A  
0
-0.25A  
30  
20  
10  
0
-1.0A  
1cm  
SET TIME BASE FOR  
50 / 10ns / cm  
.01  
.05  
.1  
.5  
1
5
10  
50  
100  
REVERSE VOLTAGE,(V)  
01-December-2008 Rev. A  
Page 2 of 2  

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