UMH11N [SECOS]
NPN Mult i-Chip Built-in Resistors Transistor; NPN MULT I-芯片内置电阻晶体管
| 型号： | UMH11N |
| 厂家： | 
SECOS HALBLEITERTECHNOLOGIE GMBH |
| 描述： | NPN Mult i-Chip Built-in Resistors Transistor |
| 文件： | 总2页 (文件大小：441K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
UMH11N
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
RoHS Compliant Product
SOT-363
8o
.055(1.40)
.047(1.20)
Features
o
0
.026TYP
(0.65TYP)
* Mounting possible with UMT3 automatic mounting
machines.
.021REF
(0.525)REF
* Transistor elements are independent,
eliminating interference.
.053(1.35)
.045(1.15)
.096(2.45)
.085(2.15)
* Mounting cost and area can be cut in half.
* Two DTC114E chips in a UMT package
.018(0.46)
.010(0.26)
.014(0.35)
.006(0.15)
.006(0.15)
.003(0.08)
.087(2.20)
.079(2.00)
：
MARKING
H11
.004(0.10)
.000(0.00)
.043(1.10)
.035(0.90)
.039(1.00)
.035(0.90)
Dimensions in inches and (millimeters)
Absolute maximum ratings(Ta=25℃)
Parameter
Symbol
Unit
Limits
Supply voltage
Input voltage
VCC
VIN
50
40
V
V
-10~
IO
50
100
Output current
mA
IC(MAX)
Pd
Power dissipation
Junction temperature
Storage temperature
150(TOTAL)
150
mW
℃
Tj
-55~
150
tg
Ts
℃
Electrical characteristics (Ta=25℃)
Parameter
Symbol
VI(off)
VI(on)
VO(on)
II
Min.
Typ
Max.
Unit
Conditions
VCC=5V ,IO=100µA
VO=0.3V ,IO=10 mA
IO/II=10mA/0.5mA
VI=5V
0.5
Input voltage
V
3
Output voltage
Input current
0.3
0.88
0.5
V
mA
µA
Output current
IO(off)
GI
VCC=50V, VI=0
VO=5V ,IO=5mA
DC current gain
Input resistance
Resistance ratio
Transition frequency
30
7
R1
10
1
13
KΩ
R2/R1
fT
0.8
1.2
250
MHz
VCE=10V ,IE=-5mA,f=100MHz
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jan-2006 Rev. B
Page 1 of 2
UMH11N
NPN Multi-Chip
Elektronische Bauelemente
Built-in Resistors Transistor
Typical Characteristics
10m
5m
100
1k
V
O
=0.3V
V
CC=5V
VO=5V
50
20
500
200
Ta=100°C
25°C
−40°C
2m
1m
Ta=100°C
25°C
−40°C
500µ
10
5
100
50
Ta=−40°C
25°C
100°C
200µ
100µ
50µ
20
2
10
5
1
20µ
10µ
5µ
500m
2
1
200m
100m
2µ
1µ
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
0
0.5
1
1.5
2
2.5
3
OUTPUT CURRENT : I (A)
O
OUTP UT C UR R E NT : I
O
(A)
INPUT VOLTAGE : VI (off) (V)
Fig.3 DC current gain vs. output
current
Fig.1 Input voltage vs. output current
(ON characteristics)
Fig.2 Output current vs. input voltage
(OFF characteristics)
1
lO/lI=20
500m
Ta=100°C
25°C
−40°C
200m
100m
50m
20m
10m
5m
2m
1m
100µ 200µ 500µ 1m 2m
5m 10m 20m 50m 100m
OUTPUT CURRENT : I
O
(A)
Fig.4 Output voltage vs. output
current
Any changing of specification will not be informed individual
http://www.SeCoSGmbH.com
01-Jan-2006 Rev. B
Page 2 of 2
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