S-22H12I10 [SEIKO]

256X4 NON-VOLATILE SRAM, 200ns, PDIP18, DIP-18;
S-22H12I10
型号: S-22H12I10
厂家: SEIKO EPSON CORPORATION    SEIKO EPSON CORPORATION
描述:

256X4 NON-VOLATILE SRAM, 200ns, PDIP18, DIP-18

静态存储器 光电二极管 内存集成电路
文件: 总12页 (文件大小:572K)
下载:  下载PDF数据表文档文件

S2-2K21F8

RES SMD 2.21K OHM 1% 1W 2615

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0 RIEDON

S2-2K2F1

RES SMD 2.2K OHM 1% 1W 2615

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0 RIEDON

S2-2K2J8

RES SMD 2.2K OHM 5% 1W 2615

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1 RIEDON

S22MD1V

Photothyristor Coupler

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280 SHARP

S22MD1VP

SCR Output Optocoupler, 1-Element, 5000V Isolation, DIP-6

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0 SHARP

S22MD2

Photothyristor Coupler

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69 SHARP

S22MD3

Photothyristor Coupler

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76 SHARP

S22MD3I

Triac Output Optocoupler, 2-Element, 2500V Isolation,

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0 SHARP

S-22OHM0.01%

Fixed Resistor, Wire Wound, 1W, 2ohm, 58V, 0.01% +/-Tol, -50,50ppm/Cel, Surface Mount, 2616, CHIP, ROHS COMPLIANT

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0 VISHAY

S-22OHM5%

Fixed Resistor, Wire Wound, 1W, 2ohm, 58V, 5% +/-Tol, -50,50ppm/Cel, Surface Mount, 2616, CHIP, ROHS COMPLIANT

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0 VISHAY

S22P006S05

Hall Effect Current Sensors

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87 ETC

S22P006S05

Hall Effect Current Sensors

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36 ETC

S22P015S05

Hall Effect Current Sensors

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47 ETC

S22P015S05

Hall Effect Current Sensors

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45 ETC

S22P025S05

Hall Effect Current Sensors

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76 ETC