SG-3032JCD [SEIKO]
Oscillator, CMOS,;
| 型号： | SG-3032JCD |
| 厂家： | 
SEIKO EPSON CORPORATION |
| 描述： | Oscillator, CMOS, |
| 文件： | 总2页 (文件大小：78K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Crystal oscillator
32kHz CRYSTAL OSCILLATOR
SG-3032JC
• No adjustment required with 32.768kHz crystal unit built-in.
• Use of C-MOS IC enables reduction of current consumption.
• Small suited to high-density mounting.
Actual size
Specifications (characteristics)
Symbol
f0
Item
Remarks
Specifications
32.768 kHz
Output frequency range
Max. supply voltage
-0.3V to +4.3V
VDD-GND
VDD
Power source voltage
Operating voltage
1.8V to 3.6V
Storage temperature
Operating temperature
-55˚C to +125˚C
TSTG
Temperature range
TOPR
-20˚C to +70˚C
Twice at Under 260˚C within 10 sec.
B: 5±23ppm C: 5±50ppm D: 5±100ppm
+10ppm / -120ppm
±2ppm /V max.
Soldering condition
TSOL
Frequency tolerance
VDD=3.3V Ta=25˚C
-20˚C to +70˚C, taking Ta=25˚C as the reference
Ta=25˚C
∆f/f0
Frequency temperature characteristics
Frequency voltage characteristics
Current consumption
No load condition
lOP
5µA max.
1/2 VDD level
Duty
40% to 60%
tW/t
IOH= -50mA
IOL=+0.5mA
C-MOS load
VOH
VOL
CL
VDD -0.4V min.
0.4V max.
Output voltage
15pF max.
Output load condition (fan out)
Output rise time
100ns max.
100ns max.
C-MOS load:20%/80% VDD
C-MOS load:80%/20% VDD
For more than 1ms until VDD=0V→1.8V.
Time at 1.8V to be 0 sec.
tTLH
tTHL
Output fall time
tOSC
3s max.
Oscillation start up time
Aging
Ta=25˚C, VDD=3.3V, first year
±5ppm/year max.
fa
Three drops on a hard board from 75 cm or excitation
test with 3000G x 0.3ms x 1/2 sine wave in 3
directions
±5ppm max.
Shock resistance
S.R.
Unless otherwise stated, characteristics (specifications) shown in the above table are based on the rated operating temperature and voltage condition.
(Unit: mm)
(Unit: mm)
External dimensions
Recommended soldering pattern
10.5 max.
NO. Pin terminal
#4
#3
1
2
3
4
NC
GND
OUT
VDD
SG3032 B
E 9123A
#1
#2
5.8max.
(1.0)
(1.0)
0.5
3.6
5.08
1.3
3.8
1.3
30
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