SLA3504 [SEIKO]

FPGA, 26921 GATES;
SLA3504
型号: SLA3504
厂家: SEIKO EPSON CORPORATION    SEIKO EPSON CORPORATION
描述:

FPGA, 26921 GATES

可编程逻辑
文件: 总12页 (文件大小:154K)
中文:  中文翻译
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PF839-02  
SLA35000 Series  
High Density Gate Array  
Super-high-density gate array  
Operates on 3.0/3.3/5.0V power sources  
Number of gates: 41 to 162k gates  
(sea of gates)  
DESCRIPTION  
The SLA 35000 series are Sea-of-gate type CMOS gate arrays adopting a super-high-density architecture and  
having a significantly increased number of gates per chip than their equivalent processing equipment.  
This series are ideal for midsize systems having a relatively small number of I/Os and provide high cost  
performance.  
There are four models ranging from 41,417 to 161,841 gates which can be operated on any power source of 3.0,  
3.3 or 5.0V, enabling them to be used in a variety of low-voltage applied fields.  
Their demands are approximately 30% smaller (0.77µ W/MHz/BC when the internal cell is 3.0V) than those of their  
equivalent SLA 30000 series. This allows them to be used more easily in high density circuits to be mounted on  
small packages and employed for various applications such as for image processing and in communication  
equipment.  
To develop high-speed/high-density circuits in a shorter period of time, the series enable diverse design techniques  
to be employed during development such as high accuracy simulation of wiring resistance and blunted waveform  
in addition to the conventional wiring capacity components, and provide a new layout tool for reducing clock skew.  
FEATURES  
Super-high density (adopting 0.6µm silicon gate CMOS with 3-metal layer)  
High-speed operation (operation delay of internal gate = 0.4ns at 3.3V, 2-input power NAND standard)  
Selectable supply voltage: 5.0V, 3.3V, and 3.0V  
Low power consumption (0.77µW/MHz/BC when internal cell = 3.0V)  
Output drivability (IOL = 1, 4, 8, 12 mA when 5.0V, IOL = 500µ, 2, 4, 6mA when 3.3V)  
On-chip RAM available  
PRODUCT LINEUP  
Master  
SLA3504  
41,417  
26,921  
110  
SLA3506  
64,320  
38,592  
130  
SLA3509  
95,760  
52,668  
162  
SLA3516  
161,841  
80,920  
210  
Total BCs (Raw Gates)  
Usable Bcs  
Number of PADs  
Internal Gates  
tpd = 0.30ns (standard at 5.0V), tpd = 0.40ns (standard at 3.3V)  
tpd = 0.48ns (standard at 5.0V), tpd = 0.63ns (standard at 3.3V)  
Propagation  
Delay  
Input Buffers  
Output Buffers  
tpd = 2.08ns (standard at 5.0V), tpd = 2.86ns (standard at 3.3V) CL = 50pF  
CMOS, TTL  
I/O Level  
Input Mode  
Output Mode  
TTL, CMOS, Pull-up/Pull-down  
Normal, 3-state, Bi-directional  
ABSOLUTE MAXIMUM RATINGS  
(VSS = 0V)  
Item  
Power voltage  
Symbol  
VDD  
VI  
Rating  
Unit  
V
–0.3 to 6.0  
Input voltage  
–0.3 to VDD+0.5  
–0.3 to VDD+0.5  
±25 (±50*1)  
–65 to 150  
V
Output voltage  
VO  
V
Output current/pin  
Storage temperature  
IOUT  
Tstg  
mA  
°C  
*1: For cell of 24mA output current  
1
SLA35000 Series  
RECOMMENDED OPERATING CONDITION  
Single power supply  
Item  
Symbol  
VDD  
Min.  
2.70  
3.00  
4.75  
4.50  
VSS  
0
Typ.  
3.00  
3.30  
5.00  
5.00  
Max.  
3.30  
3.60  
5.25  
5.50  
VDD  
70  
Unit  
V
Power voltage  
Input voltage  
VI  
V
25  
°C  
°C  
Operating temperature  
Topr  
–40  
25  
85  
Normal input during input  
rise time  
tri  
tfi  
tri  
tfi  
50  
50  
5
ns  
ns  
Normal input during input  
fall time  
Schmitt input during input  
rise time  
ms  
ms  
Schmitt input during input  
fall time  
5
ELECTRICAL CHARACTERISTICS (VDD=5V)  
(VDD = 5V, VSS = 0V, Ta = –40 to 85°C)  
Item  
Symbol  
IDDS  
ILI  
Conditions  
Stop position  
Min.  
Typ.  
Max.  
400  
1
Unit  
Stand-by current *  
µA  
Input leakage current  
Off-state leakage current  
–1  
–1  
µA  
IOZ  
1
µA  
IOH = –1mA (Type M),  
–4mA (Type 1),  
VDD  
–4  
High level output voltage  
Low level output voltage  
VOH  
VOL  
–8mA (Type 2),  
V
V
–12mA (Type 3)  
VDD = Min.  
IOL = 1mA (Type M),  
4mA (Type 1),  
8mA (Type 2),  
0.4  
12mA (Type 3)  
VDD = Min.  
High level input voltage  
Low level input voltage  
High level input voltage  
Low level input voltage  
Hysterisis voltage  
VIH1  
VIL1  
VT1+  
VT1-  
VH1  
CMOS level, VDD = Max.  
CMOS level, VDD = Min.  
CMOS Schmitt, VDD = 5.0V  
CMOS Schmitt, VDD = 5.0V  
CMOS Schmitt, VDD = 5.0V  
TTL level, VDD = Max.  
TTL level, VDD = Min.  
TTL Schmitt, VDD = 5.0V  
TTL Schmitt, VDD = 5.0V  
TTL Schmitt, VDD = 5.0V  
3.5  
1.0  
4.0  
V
V
V
V
V
V
V
V
V
V
0.8  
0.3  
2.0  
High level input voltage  
Low level input voltage  
High level input voltage  
Low level input voltage  
Hysterisis voltage  
VIH2  
VIL2  
VT2+  
VT2-  
VH2  
0.8  
2.4  
0.6  
0.1  
25  
50  
25  
50  
Type 1  
Type 2  
50  
100  
50  
100  
100  
200  
100  
200  
12  
12  
12  
Pull-up resistor  
RPU  
RPD  
VI = 0V  
KΩ  
KΩ  
Type 1  
Type 2  
Pull-down resistor  
VI = VDD  
Input pin capacitance  
Output pin capacitance  
I/O pin capacitance  
CI  
CO  
CIO  
f = 1MHz, VDD = 0V  
f = 1MHz, VDD = 0V  
f = 1MHz, VDD = 0V  
pF  
pF  
pF  
* Stand by current is a representative value of eresy series  
2
SLA35000Series  
ELECTRICAL CHARACTERISTICS (VDD=3V)  
(VDD = 3V±0.3V, VSS = 0V, Ta = –40 to 85°C)  
Item  
Symbol  
IDDS  
ILI  
Conditions  
Stop position  
Min.  
Typ.  
Max.  
500  
1
Unit  
Stand-by current*  
µA  
Input leakage current  
Off-state leakage current  
–1  
–1  
µA  
µA  
IOZ  
1
IOH = –0.5mA (Type M),  
–1.8mA (Type 1),  
–3.5mA (Type 2),  
–5mA (Type 3)  
VDD  
High level output voltage  
Low level output voltage  
VOH  
VOL  
V
V
–0.3  
VDD = Min.  
IOL = 0.5mA (Type M),  
1.8mA (Type 1),  
3.5mA (Type 2),  
5mA (Type 3)  
0.3  
VDD = Min.  
High level input voltage  
Low level input voltage  
High level input voltage  
Low level input voltage  
Hysterisis voltage  
VIH1  
VIL1  
VT1+  
VT1-  
VH1  
CMOS level, VDD = Max.  
CMOS level, VDD = Min.  
CMOS Schmitt, VDD = 3.0V  
CMOS Schmitt, VDD = 3.0V  
CMOS Schmitt, VDD = 3.0V  
2.0  
V
V
V
V
V
0.8  
2.3  
0.5  
0.1  
50  
100  
50  
100  
Type 1  
100  
200  
100  
200  
200  
400  
200  
400  
12  
Pull-up resistor  
RPU  
RPD  
VI = 0V  
KΩ  
KΩ  
Type 2  
Type 1  
Type 2  
Pull-down resistor  
VO = VDD  
Input pin capacitance  
Output pin capacitance  
I/O pin capacitance  
CI  
CO  
CIO  
f = 1MHz, VDD = 0V  
f = 1MHz, VDD = 0V  
f = 1MHz, VDD = 0V  
pF  
pF  
pF  
12  
12  
* Stand by current is a representative value of eresy series  
ELECTRICAL CHARACTERISTICS (VDD=3.3V)  
(VDD = 3.3V±0.3V, VSS = 0V, Ta = –40 to 85°C)  
Item  
Symbol  
IDDS  
ILI  
Condition  
Stop position  
Min.  
Typ.  
Max.  
500  
1
Unit  
µA  
Stand-by current*  
Input leakage current  
Off-state leakage current  
–1  
–1  
µA  
IOZ  
1
µA  
IOH = –0.5mA (Type M),  
–2mA (Type 1),  
VDD  
High level output voltage  
Low level output voltage  
VOH  
VOL  
–4mA (Type 2),  
–6mA (Type 3)  
V
V
–0.3  
VDD = Min.  
IOL = 0.5mA (Type M),  
2mA (Type 1),  
4mA (Type 2),  
0.3  
6mA (Type 3)  
VDD = Min.  
High level input voltage  
Low level input voltage  
High level input voltage  
Low level input voltage  
Hysterisis voltage  
VIH1  
VIL1  
VT1+  
VT1-  
VH1  
CMOS level, VDD = Max.  
CMOS level, VDD = Min.  
CMOS Schmitt, VDD = 3.3V  
CMOS Schmitt, VDD = 3.3V  
CMOS Schmitt, VDD = 3.3V  
2.2  
V
V
V
V
V
0.8  
2.4  
0.6  
0.1  
45  
90  
45  
90  
Type 1  
90  
180  
90  
180  
180  
360  
180  
360  
12  
Pull-up resistor  
RPU  
RPD  
VI = 0V  
KΩ  
KΩ  
Type 2  
Type 1  
Type 2  
Pull-down resistor  
VI = VDD  
Input pin capacitance  
Output pin capacitance  
I/O pin capacitance  
CI  
CO  
CIO  
f = 1MHz, VDD = 0V  
f = 1MHz, VDD = 0V  
f = 1MHz, VDD = 0V  
pF  
pF  
pF  
12  
12  
* Stand by current is a representative value of eresy series  
3
SLA35000 Series  
PERFORMANCE CURVES (VDD=5V)  
Output Current Characteristics (5.0V±10%)  
Measurement Circuit  
VDD  
Output current  
IOH  
IOL  
TYPE number  
TYPE M  
IOH (mA)  
IOL (mA)  
-1  
-4  
1
4
A
XIBC  
V
I
VOH, VOL  
TYPE 1  
TYPE 2  
-8  
8
VSS  
TYPE 3  
-12  
12  
The alphanumerics of the TYPE* (M, 1-3) indicate the  
output cell names (xx * x).  
Example: XUO3 Å® Indicates TYPE3  
Output Buffer Characteristics (5V±10%)  
Standard Type  
6.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
VDD = 5.5V  
VDD = 5.5V  
VDD = 5.0V  
VDD = 4.5V  
5.0  
VDD = 5.0V  
VDD = 4.5V  
4.0  
Ta = 25°C  
Ta = 25°C  
3.0  
2.0  
1.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
VIN (V)  
VIN (V)  
Schmitt – Trigger cell  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
VDD = 5.5V  
VDD = 5.5V  
VDD = 5.0V  
VDD = 4.5V  
VDD = 5.0V  
VDD = 4.5V  
Ta = 25°C  
Ta = 25°C  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
VIN (V)  
VIN (V)  
4
SLA35000Series  
Output Driver Characteristics  
Low level output current  
TYPE M  
High level output current  
TYPE M  
10  
0
T
a
= 25°C  
= 25°C  
= 25°C  
T
a
= 25°C  
V
DD = 4.5V  
DD = 5.0V  
DD = 5.5V  
V
5
-5  
V
VDD = 5.5V  
VDD = 5.0V  
VDD = 4.5V  
-10  
0
0.5  
(V)  
1.0  
1.0  
1.0  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
0
0
V
OL  
VOH |VDD(V)  
TYPE 1  
TYPE 1  
20  
0
-10  
-20  
T
a
T
a
= 25°C  
V
DD = 5.5V  
10  
V
DD = 5.0V  
V
DD = 4.5V  
V
DD = 4.5V  
V
DD = 5.0V  
V
DD = 5.5V  
0
0.5  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
VOL (V)  
VOH |VDD(V)  
TYPE 2  
TYPE 2  
50  
0
-25  
-50  
T
a
T
a
= 25°C  
V
DD = 4.5V  
DD = 5.0V  
DD = 5.5V  
25  
VDD = 5.5V  
VDD = 5.0V  
VDD = 4.5V  
V
V
0
0.5  
(V)  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
V
OL  
V
OH |VDD(V)  
5
SLA35000 Series  
Low level output current  
High level output current  
TYPE 3  
TYPE 3  
100  
0
-40  
-80  
T
a
= 25°C  
Ta = 25°C  
V
DD = 4.5V  
DD = 5.0V  
DD = 5.5V  
50  
V
V
VDD = 5.5V  
VDD = 5.0V  
VDD = 4.5V  
0
0.5  
(V)  
1.0  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
V
V
OH |VDD(V)  
OL  
TYPE 1 to 3  
TYPE 1 to 3  
100  
0
-40  
-80  
TYPE1  
TYPE2  
T
V
a
= 25°C  
DD = 5.0V  
50  
TYPE3  
TYPE3  
TYPE2  
TYPE1  
T
a
= 25°C  
VDD = 5.0V  
0
0.5  
(V)  
1.0  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
V
OL  
VOH |VDD(V)  
Delay Characteristics  
tpd vs. VDD  
tpd vs. Ta  
2.0  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
1.3  
1.2  
1.1  
1.0  
0.9  
0.8  
0.7  
T
a
= 25°C  
DD = 5.0V  
= 1.0  
T
a
= 25°C  
DD = 5.0V  
= 1.0  
V
t
V
t
pd  
pd  
1
2
3
4
5
6
-60  
-40  
-20  
0
20  
40  
60  
80  
100 120  
V
DD (V)  
Ta (°C)  
6
SLA35000Series  
Output delay time vs. CL  
tPLH vs. CL  
tPHL vs. CL  
20  
18  
16  
14  
12  
10  
8
20  
18  
16  
14  
12  
10  
8
VDD = 5.0V  
VDD = 5.0V  
Vth = 2.5V  
Ta = 25°C  
Vth = 2.5V  
Ta = 25°C  
6
6
4
4
2
2
0
0
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
CL (pF)  
CL (pF)  
Output Buffer tr, tf vs. CL  
tr vs. CL characteristics  
tf vs. CL characteristics  
TYPE M  
TYPE M  
0.25  
0.2  
0.15  
0.1  
0.05  
0
0.25  
0.2  
0.15  
0.1  
0.05  
0
VDD = 5.0V  
Ta = 25°C  
V
DD = 5.0V  
Ta = 25°C  
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
CL (pF)  
CL (pF)  
TYPE 1 to 3  
TYPE 1 to 3  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
V
DD = 5.0V  
VDD = 5.0V  
Ta = 25°C  
Ta = 25°C  
XUO1  
XUO1  
XUO2  
XUO3  
XUO2  
XUO3  
0
0
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
CL  
(pF)  
CL (pF)  
7
SLA35000 Series  
PERFORMANCE CURVES (VDD=3.3V)  
Output Current Characteristics (3.3V±0.3V)  
Output current  
TYPE number  
TYPE M  
I
OH (mA)  
IOL (mA)  
-0.5  
-2  
0.5  
2
TYPE 1  
TYPE 2  
-4  
4
TYPE 3  
-6  
6
The alphanumerics of the TYPE* (M, 1-3) indicate the output cell names (xx * x).  
Example: XUO3 Å® Indicates TYPE3  
Output Buffer Characteristics (3.3V±0.3V)  
Standard Type  
Schmitt–Trigger cell  
6.0  
5.0  
6.0  
5.0  
4.0  
3.0  
2.0  
1.0  
4.0  
VDD = 3.6V  
V
DD = 3.6V  
DD = 3.3V  
DD = 3.0V  
VDD = 3.3V  
V
3.0  
V
VDD = 3.0V  
Ta = 25°C  
2.0  
1.0  
Ta = 25°C  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
0
1.0  
2.0  
3.0  
4.0  
5.0  
6.0  
VIN (V)  
V
IN (V)  
8
SLA35000Series  
Output Driver Characteristics  
Low level output current  
High level output current  
TYPE M  
TYPE M  
0
-2.5  
-5  
5
T
a
= 25°C  
T
a
= 25°C  
= 25°C  
= 25°C  
V
DD = 3.0V  
2.5  
V
DD = 3.3V  
V
DD = 3.3V  
V
DD = 3.0V  
0
0.5  
1.0  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
-0.2  
-0.2  
0
VOL (V)  
VOH |VDD(V)  
TYPE 1  
TYPE 1  
0
-10  
-20  
20  
T
a
= 25°C  
T
a
V
DD = 3.0V  
10  
V
DD = 3.3V  
VDD = 3.3V  
VDD = 3.0V  
-1.0  
-0.8  
-0.6  
-0.4  
0
0
0.5  
(V)  
1.0  
V
VOH |VDD(V)  
OL  
TYPE 2  
TYPE 2  
0
-25  
-50  
50  
T
a
= 25°C  
T
a
V
DD = 3.0V  
V
DD = 3.3V  
25  
VDD = 3.3V  
VDD = 3.0V  
-1.0  
-0.8  
-0.6  
-0.4  
0
0
0.5  
1.0  
V
OH |VDD(V)  
V
(V)  
OL  
9
SLA35000 Series  
Low level output current  
High level output current  
TYPE 3  
TYPE 3  
50  
0
-25  
-50  
T
a
= 25°C  
Ta = 25°C  
25  
V
DD = 3.0V  
VDD = 3.3V  
VDD = 3.0V  
V
DD = 3.3V  
0
0.5  
(V)  
1.0  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
V
VOH |VDD(V)  
OL  
TYPE 1 to 3  
TYPE 1 to 3  
100  
0
-25  
-50  
T
V
a
= 25°C  
DD = 3.3V  
TYPE1  
TYPE2  
50  
TYPE3  
T
a
= 25°C  
TYPE3  
TYPE2  
TYPE1  
VDD = 3.3V  
0
0.5  
1.0  
-1.0  
-0.8  
-0.6  
-0.4  
-0.2  
0
V
OL (V)  
VOH |VDD(V)  
Delay Characteristics  
tpd vs. VDD  
1.8  
1.6  
1.4  
1.2  
1.0  
0.8  
0.6  
T
V
a
= 25°C  
DD = 3.3V  
= 1.0  
t
pd  
1
2
3
4
5
6
V
DD (V)  
10  
SLA35000Series  
Output delay time vs. CL  
tPLH vs. CL  
tPHL vs. CL  
30  
25  
20  
15  
10  
5
30  
25  
20  
15  
10  
5
V
DD = 3.3V  
V
DD = 3.3V  
Vth = 1.5V  
Ta = 25°C  
Vth = 1.5V  
Ta = 25°C  
XPDV1AT+XUO2  
0
0
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
C
L(pF)  
C
L(pF)  
Output Buffer tr, tf vs. CL  
tr vs. CL characteristics  
tf vs. CL characteristics  
0.25  
0.2  
0.15  
0.1  
0.05  
0
0.25  
0.2  
0.15  
0.1  
0.05  
0
VDD = 3.3V  
Ta = 25°C  
V
DD = 3.3V  
Ta = 25°C  
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
CL (pF)  
CL (pF)  
40  
30  
20  
10  
0
40  
30  
20  
10  
0
V
DD = 3.3V  
V
DD = 3.3V  
Ta = 25°C  
Ta = 25°C  
0
40  
80  
120  
160  
200  
0
40  
80  
120  
160  
200  
C (pF)  
L
C
(pF)  
L
11  
SLA35000 Series  
NOTICE  
No part of this material may be reproduced or duplicated in any form or by any means without the written permission of Seiko  
Epson. Seiko Epson reserves the right to make changes to this material without notice. Seiko Epson does not assume any liability  
of any kind arising out of any inaccuracies contained in this material or due to its application or use in any product or circuit and,  
further, there is no representation that this material is applicable to products requiring high level reliability, such as, medical  
products. Moreover, no license to any intellectual property rights is granted by implication or otherwise, and there is no  
representation or warranty that anything made in accordance with this material will be free from any patent or copyright  
infringement of a third party. This material or portions thereof may contain technology or the subject relating to strategic products  
under the control of the Foreign Exchange and Foreign Trade Control Law of Japan and may require an export license from the  
Ministry of International Trade and Industry or other approval from another government agency.  
All product names mentioned herein are trademarks and/or registered trademarks of their respective companies.  
©Seiko Epson Corporation 1998 All rights reserved.  
ELECTRONIC DEVICES MARKETING DIVISION  
Electronic Device Marketing Department  
IC Marketing & Engineering Group  
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN  
Phone: +81-(0)42-587-5816  
Fax: +81-(0)42-587-5624  
ED International Marketing Department I (Europe & U.S.A.)  
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN  
Phone: +81-(0)42-587-5812  
Fax: +81-(0)42-587-5564  
ED International Marketing Department II (Asia)  
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN  
Phone: +81-(0)42-587-5814  
Fax: +81-(0)42-587-5110  
Electric Device Information of EPSON WWW server  
http://www.epson.co.jp  
12  

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