SLA3504 [SEIKO]
FPGA, 26921 GATES;
| 型号： | SLA3504 |
| 厂家： | 
SEIKO EPSON CORPORATION |
| 描述： | FPGA, 26921 GATES 可编程逻辑 |
| 文件： | 总12页 (文件大小：154K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PF839-02
SLA35000 Series
High Density Gate Array
● Super-high-density gate array
● Operates on 3.0/3.3/5.0V power sources
● Number of gates: 41 to 162k gates
(sea of gates)
■ DESCRIPTION
The SLA 35000 series are Sea-of-gate type CMOS gate arrays adopting a super-high-density architecture and
having a significantly increased number of gates per chip than their equivalent processing equipment.
This series are ideal for midsize systems having a relatively small number of I/Os and provide high cost
performance.
There are four models ranging from 41,417 to 161,841 gates which can be operated on any power source of 3.0,
3.3 or 5.0V, enabling them to be used in a variety of low-voltage applied fields.
Their demands are approximately 30% smaller (0.77µ W/MHz/BC when the internal cell is 3.0V) than those of their
equivalent SLA 30000 series. This allows them to be used more easily in high density circuits to be mounted on
small packages and employed for various applications such as for image processing and in communication
equipment.
To develop high-speed/high-density circuits in a shorter period of time, the series enable diverse design techniques
to be employed during development such as high accuracy simulation of wiring resistance and blunted waveform
in addition to the conventional wiring capacity components, and provide a new layout tool for reducing clock skew.
■ FEATURES
● Super-high density (adopting 0.6µm silicon gate CMOS with 3-metal layer)
● High-speed operation (operation delay of internal gate = 0.4ns at 3.3V, 2-input power NAND standard)
● Selectable supply voltage: 5.0V, 3.3V, and 3.0V
● Low power consumption (0.77µW/MHz/BC when internal cell = 3.0V)
● Output drivability (IOL = 1, 4, 8, 12 mA when 5.0V, IOL = 500µ, 2, 4, 6mA when 3.3V)
● On-chip RAM available
■ PRODUCT LINEUP
Master
SLA3504
41,417
26,921
110
SLA3506
64,320
38,592
130
SLA3509
95,760
52,668
162
SLA3516
161,841
80,920
210
Total BCs (Raw Gates)
Usable Bcs
Number of PADs
Internal Gates
tpd = 0.30ns (standard at 5.0V), tpd = 0.40ns (standard at 3.3V)
tpd = 0.48ns (standard at 5.0V), tpd = 0.63ns (standard at 3.3V)
Propagation
Delay
Input Buffers
Output Buffers
tpd = 2.08ns (standard at 5.0V), tpd = 2.86ns (standard at 3.3V) CL = 50pF
CMOS, TTL
I/O Level
Input Mode
Output Mode
TTL, CMOS, Pull-up/Pull-down
Normal, 3-state, Bi-directional
■ ABSOLUTE MAXIMUM RATINGS
(VSS = 0V)
Item
Power voltage
Symbol
VDD
VI
Rating
Unit
V
–0.3 to 6.0
Input voltage
–0.3 to VDD+0.5
–0.3 to VDD+0.5
±25 (±50*1)
–65 to 150
V
Output voltage
VO
V
Output current/pin
Storage temperature
IOUT
Tstg
mA
°C
*1: For cell of 24mA output current
1
SLA35000 Series
■ RECOMMENDED OPERATING CONDITION
● Single power supply
Item
Symbol
VDD
Min.
2.70
3.00
4.75
4.50
VSS
0
Typ.
3.00
3.30
5.00
5.00
–
Max.
3.30
3.60
5.25
5.50
VDD
70
Unit
V
Power voltage
Input voltage
VI
V
25
°C
°C
Operating temperature
Topr
–40
25
85
Normal input during input
rise time
tri
tfi
tri
tfi
–
–
–
–
–
–
–
–
50
50
5
ns
ns
Normal input during input
fall time
Schmitt input during input
rise time
ms
ms
Schmitt input during input
fall time
5
■ ELECTRICAL CHARACTERISTICS (VDD=5V)
(VDD = 5V, VSS = 0V, Ta = –40 to 85°C)
Item
Symbol
IDDS
ILI
Conditions
Stop position
Min.
Typ.
Max.
400
1
Unit
Stand-by current *
–
–
–
–
µA
Input leakage current
Off-state leakage current
–
–1
–1
µA
IOZ
–
1
µA
IOH = –1mA (Type M),
–4mA (Type 1),
VDD
–4
High level output voltage
Low level output voltage
VOH
VOL
–8mA (Type 2),
–
–
–
V
V
–12mA (Type 3)
VDD = Min.
IOL = 1mA (Type M),
4mA (Type 1),
8mA (Type 2),
–
0.4
12mA (Type 3)
VDD = Min.
High level input voltage
Low level input voltage
High level input voltage
Low level input voltage
Hysterisis voltage
VIH1
VIL1
VT1+
VT1-
VH1
CMOS level, VDD = Max.
CMOS level, VDD = Min.
CMOS Schmitt, VDD = 5.0V
CMOS Schmitt, VDD = 5.0V
CMOS Schmitt, VDD = 5.0V
TTL level, VDD = Max.
TTL level, VDD = Min.
TTL Schmitt, VDD = 5.0V
TTL Schmitt, VDD = 5.0V
TTL Schmitt, VDD = 5.0V
3.5
–
–
–
–
1.0
4.0
–
V
V
V
V
V
V
V
V
V
V
–
–
0.8
0.3
2.0
–
–
–
–
High level input voltage
Low level input voltage
High level input voltage
Low level input voltage
Hysterisis voltage
VIH2
VIL2
VT2+
VT2-
VH2
–
–
–
0.8
2.4
–
–
–
0.6
0.1
25
50
25
50
–
–
–
–
Type 1
Type 2
50
100
50
100
–
100
200
100
200
12
12
12
Pull-up resistor
RPU
RPD
VI = 0V
KΩ
KΩ
Type 1
Type 2
Pull-down resistor
VI = VDD
Input pin capacitance
Output pin capacitance
I/O pin capacitance
CI
CO
CIO
f = 1MHz, VDD = 0V
f = 1MHz, VDD = 0V
f = 1MHz, VDD = 0V
pF
pF
pF
–
–
–
–
* Stand by current is a representative value of eresy series
2
SLA35000Series
■ ELECTRICAL CHARACTERISTICS (VDD=3V)
(VDD = 3V±0.3V, VSS = 0V, Ta = –40 to 85°C)
Item
Symbol
IDDS
ILI
Conditions
Stop position
Min.
Typ.
Max.
500
1
Unit
Stand-by current*
–
–
–
–
µA
Input leakage current
Off-state leakage current
–
–
–1
–1
µA
µA
IOZ
1
IOH = –0.5mA (Type M),
–1.8mA (Type 1),
–3.5mA (Type 2),
–5mA (Type 3)
VDD
High level output voltage
Low level output voltage
VOH
VOL
–
–
–
V
V
–0.3
VDD = Min.
IOL = 0.5mA (Type M),
1.8mA (Type 1),
3.5mA (Type 2),
5mA (Type 3)
–
0.3
VDD = Min.
High level input voltage
Low level input voltage
High level input voltage
Low level input voltage
Hysterisis voltage
VIH1
VIL1
VT1+
VT1-
VH1
CMOS level, VDD = Max.
CMOS level, VDD = Min.
CMOS Schmitt, VDD = 3.0V
CMOS Schmitt, VDD = 3.0V
CMOS Schmitt, VDD = 3.0V
2.0
–
–
–
–
V
V
V
V
V
0.8
2.3
–
–
–
0.5
0.1
50
100
50
100
–
–
–
–
Type 1
100
200
100
200
–
200
400
200
400
12
Pull-up resistor
RPU
RPD
VI = 0V
KΩ
KΩ
Type 2
Type 1
Type 2
Pull-down resistor
VO = VDD
Input pin capacitance
Output pin capacitance
I/O pin capacitance
CI
CO
CIO
f = 1MHz, VDD = 0V
f = 1MHz, VDD = 0V
f = 1MHz, VDD = 0V
pF
pF
pF
–
–
12
–
–
12
* Stand by current is a representative value of eresy series
■ ELECTRICAL CHARACTERISTICS (VDD=3.3V)
(VDD = 3.3V±0.3V, VSS = 0V, Ta = –40 to 85°C)
Item
Symbol
IDDS
ILI
Condition
Stop position
Min.
–
Typ.
Max.
500
1
Unit
µA
Stand-by current*
–
–
–
Input leakage current
Off-state leakage current
–
–1
–1
µA
IOZ
–
1
µA
IOH = –0.5mA (Type M),
–2mA (Type 1),
VDD
High level output voltage
Low level output voltage
VOH
VOL
–4mA (Type 2),
–6mA (Type 3)
–
–
–
V
V
–0.3
VDD = Min.
IOL = 0.5mA (Type M),
2mA (Type 1),
4mA (Type 2),
–
0.3
6mA (Type 3)
VDD = Min.
High level input voltage
Low level input voltage
High level input voltage
Low level input voltage
Hysterisis voltage
VIH1
VIL1
VT1+
VT1-
VH1
CMOS level, VDD = Max.
CMOS level, VDD = Min.
CMOS Schmitt, VDD = 3.3V
CMOS Schmitt, VDD = 3.3V
CMOS Schmitt, VDD = 3.3V
2.2
–
–
–
–
–
–
V
V
V
V
V
0.8
2.4
–
0.6
0.1
45
90
45
90
–
–
–
–
Type 1
90
180
90
180
–
180
360
180
360
12
Pull-up resistor
RPU
RPD
VI = 0V
KΩ
KΩ
Type 2
Type 1
Type 2
Pull-down resistor
VI = VDD
Input pin capacitance
Output pin capacitance
I/O pin capacitance
CI
CO
CIO
f = 1MHz, VDD = 0V
f = 1MHz, VDD = 0V
f = 1MHz, VDD = 0V
pF
pF
pF
–
–
–
–
12
12
* Stand by current is a representative value of eresy series
3
SLA35000 Series
■ PERFORMANCE CURVES (VDD=5V)
● Output Current Characteristics (5.0V±10%)
● Measurement Circuit
VDD
Output current
IOH
IOL
TYPE number
TYPE M
IOH (mA)
IOL (mA)
-1
-4
1
4
A
XIBC
V
I
VOH, VOL
TYPE 1
TYPE 2
-8
8
VSS
TYPE 3
-12
12
The alphanumerics of the TYPE* (M, 1-3) indicate the
output cell names (xx * x).
Example: XUO3 Å® Indicates TYPE3
● Output Buffer Characteristics (5V±10%)
Standard Type
6.0
6.0
5.0
4.0
3.0
2.0
1.0
VDD = 5.5V
VDD = 5.5V
VDD = 5.0V
VDD = 4.5V
5.0
VDD = 5.0V
VDD = 4.5V
4.0
Ta = 25°C
Ta = 25°C
3.0
2.0
1.0
0
1.0
2.0
3.0
4.0
5.0
6.0
0
1.0
2.0
3.0
4.0
5.0
6.0
VIN (V)
VIN (V)
Schmitt – Trigger cell
6.0
5.0
4.0
3.0
2.0
1.0
6.0
5.0
4.0
3.0
2.0
1.0
VDD = 5.5V
VDD = 5.5V
VDD = 5.0V
VDD = 4.5V
VDD = 5.0V
VDD = 4.5V
Ta = 25°C
Ta = 25°C
0
1.0
2.0
3.0
4.0
5.0
6.0
0
1.0
2.0
3.0
4.0
5.0
6.0
VIN (V)
VIN (V)
4
SLA35000Series
● Output Driver Characteristics
Low level output current
TYPE M
High level output current
TYPE M
10
0
T
a
= 25°C
= 25°C
= 25°C
T
a
= 25°C
V
DD = 4.5V
DD = 5.0V
DD = 5.5V
V
5
-5
V
VDD = 5.5V
VDD = 5.0V
VDD = 4.5V
-10
0
0.5
(V)
1.0
1.0
1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
0
0
V
OL
VOH |VDD(V)
TYPE 1
TYPE 1
20
0
-10
-20
T
a
T
a
= 25°C
V
DD = 5.5V
10
V
DD = 5.0V
V
DD = 4.5V
V
DD = 4.5V
V
DD = 5.0V
V
DD = 5.5V
0
0.5
-1.0
-0.8
-0.6
-0.4
-0.2
VOL (V)
VOH |VDD(V)
TYPE 2
TYPE 2
50
0
-25
-50
T
a
T
a
= 25°C
V
DD = 4.5V
DD = 5.0V
DD = 5.5V
25
VDD = 5.5V
VDD = 5.0V
VDD = 4.5V
V
V
0
0.5
(V)
-1.0
-0.8
-0.6
-0.4
-0.2
V
OL
V
OH |VDD(V)
5
SLA35000 Series
Low level output current
High level output current
TYPE 3
TYPE 3
100
0
-40
-80
T
a
= 25°C
Ta = 25°C
V
DD = 4.5V
DD = 5.0V
DD = 5.5V
50
V
V
VDD = 5.5V
VDD = 5.0V
VDD = 4.5V
0
0.5
(V)
1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
V
OH |VDD(V)
OL
TYPE 1 to 3
TYPE 1 to 3
100
0
-40
-80
TYPE1
TYPE2
T
V
a
= 25°C
DD = 5.0V
50
TYPE3
TYPE3
TYPE2
TYPE1
T
a
= 25°C
VDD = 5.0V
0
0.5
(V)
1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
OL
VOH |VDD(V)
● Delay Characteristics
tpd vs. VDD
tpd vs. Ta
2.0
1.8
1.6
1.4
1.2
1.0
0.8
1.3
1.2
1.1
1.0
0.9
0.8
0.7
T
a
= 25°C
DD = 5.0V
= 1.0
T
a
= 25°C
DD = 5.0V
= 1.0
V
t
V
t
pd
pd
1
2
3
4
5
6
-60
-40
-20
0
20
40
60
80
100 120
V
DD (V)
Ta (°C)
6
SLA35000Series
● Output delay time vs. CL
tPLH vs. CL
tPHL vs. CL
20
18
16
14
12
10
8
20
18
16
14
12
10
8
VDD = 5.0V
VDD = 5.0V
Vth = 2.5V
Ta = 25°C
Vth = 2.5V
Ta = 25°C
6
6
4
4
2
2
0
0
0
40
80
120
160
200
0
40
80
120
160
200
CL (pF)
CL (pF)
● Output Buffer tr, tf vs. CL
tr vs. CL characteristics
tf vs. CL characteristics
TYPE M
TYPE M
0.25
0.2
0.15
0.1
0.05
0
0.25
0.2
0.15
0.1
0.05
0
VDD = 5.0V
Ta = 25°C
V
DD = 5.0V
Ta = 25°C
0
40
80
120
160
200
0
40
80
120
160
200
CL (pF)
CL (pF)
TYPE 1 to 3
TYPE 1 to 3
30
25
20
15
10
5
30
25
20
15
10
5
V
DD = 5.0V
VDD = 5.0V
Ta = 25°C
Ta = 25°C
XUO1
XUO1
XUO2
XUO3
XUO2
XUO3
0
0
0
40
80
120
160
200
0
40
80
120
160
200
CL
(pF)
CL (pF)
7
SLA35000 Series
■ PERFORMANCE CURVES (VDD=3.3V)
● Output Current Characteristics (3.3V±0.3V)
Output current
TYPE number
TYPE M
I
OH (mA)
IOL (mA)
-0.5
-2
0.5
2
TYPE 1
TYPE 2
-4
4
TYPE 3
-6
6
The alphanumerics of the TYPE* (M, 1-3) indicate the output cell names (xx * x).
Example: XUO3 Å® Indicates TYPE3
● Output Buffer Characteristics (3.3V±0.3V)
Standard Type
Schmitt–Trigger cell
6.0
5.0
6.0
5.0
4.0
3.0
2.0
1.0
4.0
VDD = 3.6V
V
DD = 3.6V
DD = 3.3V
DD = 3.0V
VDD = 3.3V
V
3.0
V
VDD = 3.0V
Ta = 25°C
2.0
1.0
Ta = 25°C
0
1.0
2.0
3.0
4.0
5.0
6.0
0
1.0
2.0
3.0
4.0
5.0
6.0
VIN (V)
V
IN (V)
8
SLA35000Series
● Output Driver Characteristics
Low level output current
High level output current
TYPE M
TYPE M
0
-2.5
-5
5
T
a
= 25°C
T
a
= 25°C
= 25°C
= 25°C
V
DD = 3.0V
2.5
V
DD = 3.3V
V
DD = 3.3V
V
DD = 3.0V
0
0.5
1.0
-1.0
-0.8
-0.6
-0.4
-0.2
-0.2
-0.2
0
VOL (V)
VOH |VDD(V)
TYPE 1
TYPE 1
0
-10
-20
20
T
a
= 25°C
T
a
V
DD = 3.0V
10
V
DD = 3.3V
VDD = 3.3V
VDD = 3.0V
-1.0
-0.8
-0.6
-0.4
0
0
0.5
(V)
1.0
V
VOH |VDD(V)
OL
TYPE 2
TYPE 2
0
-25
-50
50
T
a
= 25°C
T
a
V
DD = 3.0V
V
DD = 3.3V
25
VDD = 3.3V
VDD = 3.0V
-1.0
-0.8
-0.6
-0.4
0
0
0.5
1.0
V
OH |VDD(V)
V
(V)
OL
9
SLA35000 Series
Low level output current
High level output current
TYPE 3
TYPE 3
50
0
-25
-50
T
a
= 25°C
Ta = 25°C
25
V
DD = 3.0V
VDD = 3.3V
VDD = 3.0V
V
DD = 3.3V
0
0.5
(V)
1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
VOH |VDD(V)
OL
TYPE 1 to 3
TYPE 1 to 3
100
0
-25
-50
T
V
a
= 25°C
DD = 3.3V
TYPE1
TYPE2
50
TYPE3
T
a
= 25°C
TYPE3
TYPE2
TYPE1
VDD = 3.3V
0
0.5
1.0
-1.0
-0.8
-0.6
-0.4
-0.2
0
V
OL (V)
VOH |VDD(V)
● Delay Characteristics
tpd vs. VDD
1.8
1.6
1.4
1.2
1.0
0.8
0.6
T
V
a
= 25°C
DD = 3.3V
= 1.0
t
pd
1
2
3
4
5
6
V
DD (V)
10
SLA35000Series
● Output delay time vs. CL
tPLH vs. CL
tPHL vs. CL
30
25
20
15
10
5
30
25
20
15
10
5
V
DD = 3.3V
V
DD = 3.3V
Vth = 1.5V
Ta = 25°C
Vth = 1.5V
Ta = 25°C
XPDV1AT+XUO2
0
0
0
40
80
120
160
200
0
40
80
120
160
200
C
L(pF)
C
L(pF)
● Output Buffer tr, tf vs. CL
tr vs. CL characteristics
tf vs. CL characteristics
0.25
0.2
0.15
0.1
0.05
0
0.25
0.2
0.15
0.1
0.05
0
VDD = 3.3V
Ta = 25°C
V
DD = 3.3V
Ta = 25°C
0
40
80
120
160
200
0
40
80
120
160
200
CL (pF)
CL (pF)
40
30
20
10
0
40
30
20
10
0
V
DD = 3.3V
V
DD = 3.3V
Ta = 25°C
Ta = 25°C
0
40
80
120
160
200
0
40
80
120
160
200
C (pF)
L
C
(pF)
L
11
SLA35000 Series
NOTICE
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©Seiko Epson Corporation 1998 All rights reserved.
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421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: +81-(0)42-587-5816
Fax: +81-(0)42-587-5624
ED International Marketing Department I (Europe & U.S.A.)
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: +81-(0)42-587-5812
Fax: +81-(0)42-587-5564
ED International Marketing Department II (Asia)
421-8, Hino, Hino-shi, Tokyo 191-8501, JAPAN
Phone: +81-(0)42-587-5814
Fax: +81-(0)42-587-5110
Electric Device Information of EPSON WWW server
http://www.epson.co.jp
12
相关型号：
SLA4010
Power Bipolar Transistor, 4A I(C), 70V V(BR)CEO, 4-Element, NPN, Silicon, Plastic/Epoxy, 12 Pin, SLA, 12 PIN
ALLEGRO
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