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元器件品牌
2N2993
[SEME-LAB]
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package; 在密封TO5金属封装的双极NPN装置
元器件型号：
2N2993
生产厂家：
SEME LAB
描述和应用：
Bipolar NPN Device in a Hermetically sealed TO5 Metal Package
在密封TO5金属封装的双极NPN装置
晶体 晶体管 装置
PDF文件：
总1页 (文件大小：14K)
下载文档：
下载PDF数据表文档文件
型号参数：2N2993参数
查看货源
2N2994
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 200MA I(C) | STR-10
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7
ETC
2N2994
Power Bipolar Transistor, 1A I(C), 100V V(BR)CEO, NPN, Silicon,
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0
ASI
2N2995
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 1A I(C) | STR-10
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36
ETC
2N2996
Small Signal Bipolar Transistor, 0.05A I(C), 10V V(BR)CEO, 1-Element, PNP, Germanium, TO-72, TO-72, 4 PIN
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0
SSDI
2N2999
TRANSISTOR | BJT | PNP | 200MA I(C) | TO-72
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17
ETC
2N2I93
Quality Semi-Conductors
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156
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1
NJSEMI
2N2I9SB
Quality Semi-Conductors
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156
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0
NJSEMI
2N2N2222AUB
BJT
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29
ETC
2N3001
SCRs (Silicon Controlled Rectifiers)
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156
-
36
BOCA
2N3001
0.8 to 110 Amperes RMS 15 to 1200 Volts
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156
-
64
CENTRAL
2N3001
Silicon Controlled Rectifier, 0.35A I(T)RMS, 250mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18, TO-18, 3 PIN
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156
-
0
SSDI
2N3001
Silicon Controlled Rectifier, 0.8A I(T)RMS, 250mA I(T), 30V V(DRM), 30V V(RRM), 1 Element, TO-18
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156
-
0
CENTRAL
2N3001
0.35A, 30V, SCR, TO-18
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156
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0
TI
2N3001LEADFREE
Silicon Controlled Rectifier, 0.8A I(T)RMS, 30V V(RRM), 1 Element, TO-18
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0
CENTRAL
2N3001LEADFREE
Silicon Controlled Rectifier, 0.8A I(T)RMS, 30V V(RRM), 1 Element, TO-18
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0
CENTRAL
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