2N3053 [SEME-LAB]
MEDIUM POWER SILICON NPN PLANAR TRANSISTOR; 中功率NPN硅平面晶体管
| 型号： | 2N3053 |
| 厂家： | 
SEME LAB |
| 描述： | MEDIUM POWER SILICON NPN PLANAR TRANSISTOR |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N3053
MECHANICAL DATA
Dimensions in mm (inches)
MEDIUM POWER SILICON
NPN PLANAR TRANSISTOR
8.89 (0.35)
9.40 (0.37)
7.75 (0.305)
8.51 (0.335)
4.19 (0.165)
4.95 (0.195)
FEATURES
0.89
(0.035)
max.
12.70
(0.500)
min.
7.75 (0.305)
8.51 (0.335)
dia.
• V
• I
40V
CEO =
= 0.7A
= 5W
C
5.08 (0.200)
typ.
• P
tot
2.54
2
(0.100)
1
3
0.66 (0.026)
1.14 (0.045)
0.71 (0.028)
0.86 (0.034)
45˚
TO39 PACKAGE
Underside View
Pin 1 = Emitter
Pin 2 = Base Pin 3 = Collector
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
V
V
V
V
Collector – Base Voltage
60V
40V
CBO
CEO
CER
CEX
EBO
Collector – Emitter Voltage
Collector – Emitter Sustaining Voltage
Collector - Emiiter Voltage
Emitter-Base Voltage
50V
60V
5V
I
Collector Current
0.7A
C
P
Power Dissipation Tamb = 25°C
1W
TOT
T
= 25°C
5W
case
T
T
Junction Temperature
Storage Temperature
200°C
–65 to 200°C
35°C / W
175°C / W
j
stg
R
R
Thermal Resistance Junction to Case
Thermal Resistance Junction to Ambient
th(jc)
th(ja)
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.01/01
2N3053
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
case
Parameter
Collector – Emitter Voltage
Test Conditions
Min.
40
Typ.
Max. Unit
V
V
V
V
I = 100mA
I = 0
B
CEO(SUS)
CER(SUS)*
(BR)CBO*
(BR)EBO*
CBO
C
Collector – Emitter Voltage
R
= 10
I = 100mA
50
BE
C
V
Collector – Base Breakdown Voltage I = 0.1mA
I = 0
60
C
E
Emitter – Base Breakdown Voltage
Collector – Base Cut-off Current
Emitter - Base Cut-off Current
I = 0.1mA
I = 0
5
E
C
I
I
V
V
= 30V
= 4V
I = 0
0.25
A
CB
EB
E
I = 0
0.25
EBO
C
V
V
Collector – Emitter Saturation Voltage I = 0.15A
I = 0.015A
1.4
V
CE(sat)*
BE(sat)*
21E*
C
B
Base – Emitter Saturation Voltage
I = 0.15A
I = 0.015A
1.7
C
B
h
Static Forward Current Transfer ratio I = 0.15A
V
= 10V
CE
50
250
—
C
V
= 10V
I = 0.05A
CE
C
f
Transistion Frequency
100
MHz
T
f = 100MHz
C
C
Output Capacitance
Input Capacitance
V
V
= 10V
= 10V
f =1MHz
f =1MHz
15
80
22b
CB
EB
pF
11b
* Pulsed tp = 300 S
2 %
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
Prelim.01/01
相关型号：
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Small Signal Bipolar Transistor, 0.7A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-39, TO-39, 3 PIN
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2N3053ALEADFREE
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CENTRAL
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