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元器件品牌
2N6560
[SEME-LAB]
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.; 双极NPN装置在一个密封TO3金属包装。
元器件型号：
2N6560
生产厂家：
SEME LAB
描述和应用：
Bipolar NPN Device in a Hermetically sealed TO3 Metal Package.
双极NPN装置在一个密封TO3金属包装。
装置
PDF文件：
总1页 (文件大小：14K)
下载文档：
下载PDF数据表文档文件
型号参数：2N6560参数
查看货源
2N6561
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-3
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ETC
2N6561
Bipolar NPN Device in a Hermetically sealed TO3
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24
SEME-LAB
2N6561
Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
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0
MICROSEMI
2N6561E3
Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
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0
MICROSEMI
2N6561E3
Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
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0
MICROSEMI
2N6562
TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 10A I(C) | TO-210AC
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9
ETC
2N6562E3
Power Bipolar Transistor, 10A I(C), 450V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
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0
MICROSEMI
2N6563
TRANSISTOR | BJT | NPN | 300V V(BR)CEO | 10A I(C) | TO-210AC
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15
ETC
2N6563E3
Power Bipolar Transistor, 10A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-61, Metal, 3 Pin,
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156
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0
MICROSEMI
2N6564
0.8 to 110 Amperes RMS 15 to 1200 Volts
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156
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31
CENTRAL
2N6564
Silicon Controlled Rectifier, 255mA I(T), 300V V(DRM)
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156
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0
POWEREX
2N6564
Silicon Controlled Rectifier, SILICON CONTROLLED RECTIFIER,300V V(DRM),255MA I(T),TO-92
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0
ONSEMI
2N6564
SCRs (Silicon Controlled Rectifiers)
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41
BOCA
2N6564APMLEADFREE
Silicon Controlled Rectifier, 0.8A I(T)RMS, 300V V(RRM), 1 Element, TO-92
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0
CENTRAL
2N6564APMLEADFREE
Silicon Controlled Rectifier, 0.8A I(T)RMS, 300V V(RRM), 1 Element, TO-92
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0
CENTRAL
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