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2N6661DCSM [SEME-LAB]

DUAL N–CHANNEL ENHANCEMENT MODE; 双N沟道增强模式

2N6661DCSM


元器件型号：	2N6661DCSM
生产厂家：	SEME LAB
描述和应用：	DUAL N–CHANNEL ENHANCEMENT MODE 双N沟道增强模式
PDF文件：	总2页 (文件大小：39K)
下载文档：	下载PDF数据表文档文件
型号参数：2N6661DCSM参数

2N6661JANTX

N-Channel 90 V (D-S) MOSFET

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17 VISHAY

2N6661JANTXV

N-Channel 90 V (D-S) MOSFET

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23 VISHAY

2N6661JTVP02

19500/547 JANTXV2N6661P WITH PIND

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0 VISHAY

2N6661M1A

N-CHANNEL ENHANCEMENT MODE POWER MOSFET

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14 SEME-LAB

2N6661N2

2N6661N2

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1 MICROCHIP

2N6666

NPN SILICON TRANSISTOR

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10 CENTRAL

2N6666

NPN SILICON TRANSISTOR

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44 CENTRAL

2N6666

POWER TRANSISTORS(65W)

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18 MOSPEC

2N6666

PLASTIC MEDIUM-POWER SILICON TRANSISTORS

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30 BOCA

2N6666

isc Silicon PNP Darlington Power Transistor

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13 ISC

2N6666

Power Bipolar Transistor, 8A I(C), 40V V(BR)CEO, PNP, Silicon, TO-220, Plastic/Epoxy, 2 Pin,

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0 MICROSEMI

2N6666-6200

8A, 40V, PNP, Si, POWER TRANSISTOR, TO-220AB

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0 RENESAS

2N6666-DR6260

8A, 40V, PNP, Si, POWER TRANSISTOR, TO-220AB

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0 RENESAS

2N6666LEADFREE

Power Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

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0 CENTRAL

2N6666LEADFREE

Power Bipolar Transistor, 8A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN

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0 CENTRAL

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