2N7086 [SEME-LAB]
N-CHANNEL ENHANCEMENT MODE TRANSISTOR; N沟道增强型晶体管
| 型号： | 2N7086 |
| 厂家： | 
SEME LAB |
| 描述： | N-CHANNEL ENHANCEMENT MODE TRANSISTOR |
| 文件： | 总2页 (文件大小：18K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7086
MECHANICAL DATA
Dimensions in mm(inches)
N–CHANNEL
ENHANCEMENT MODE
TRANSISTOR
4.83 (0.190)
5.08 (0.200)
10.41 (0.410)
10.67 (0.420)
0.89 (0.035)
1.14 (0.045)
3.56 (0.140)
3.81 (0.150)
Dia.
V(BR)DSS
ID(A)
200V
14A
1 2 3
Ω
0.16
RDS(on)
0.64 (0.025)
0.89 (0.035)
Dia.
2.54 (0.100)
BSC
3.05 (0.120)
BSC
FEATURES
• TO257AB HERMETIC PACKAGE FOR
HIGH RELIABILITY APPLICATIONS
TO–257AB Metal Package
• SCREENING OPTIONS AVAILBLE
• SIMPLE DRIVE REQUIREMENTS
Pin 1 – Gate
Pin 2 – Drain
Pin 3 – Source
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Drain – Source Voltage
Gate – Source Voltage
Continuous Drain Current
200V
±20V
DS
V
GS
I
I
T = 25°C
14A
D
C
T = 100°C
8.5A
C
1
Pulsed Drain Current
56A
DM
P
Power Dissipation
T = 25°C
60W
D
C
T = 100°C
23W
C
T , T
Operating and Storage Temperature Range
–55 to 150°C
300°C
J
stg
1
T
Lead Temperature ( / ” from case for 10 sec.)
L
16
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Prelim. 1/99
Website http://www.semelab.co.uk
2N7086
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
J
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
BV
Drain–Source Breakdown Voltage V = 0
I = 250µA
200
2
V
(BR)DSS
GS
D
V
Gate Threshold Voltage
Gate – Body Leakage
V
V
V
V
V
V
= V
= 0
I = 250µA
4
V
GS(th)
DS
DS
DS
GS
DS
GS
GS
D
I
I
I
V
= ±20V
GS
±100
25
nA
GSS
DSS
D(on)
= 160V
= 0
µA
A
Zero Gate Voltage Drain Current
T = 125°C
250
J
1
= 10V
= 10V
V
= 10V
14
On–State Drain Current
GS
0.14
0.25
0.16
0.30
Static Drain – Source On–State
R
g
Ω
S
DS(on)
1
I = 8.5A
T = 125°C
J
Resistance
D
1
V
= 15V
I = 8.5A
DS
5.0
Forward Transconductance
fs
DS
DYNAMIC CHARACTERISTICS
Input Capacitance
C
C
C
V
V
= 0
1550
500
220
44
iss
GS
DS
= 25V
pF
nC
Output Capacitance
oss
rss
f = 1MHz
Reverse Transfer Capacitance
2
Q
Q
Q
t
30
4.6
13
77
15
Total Gate Charge
g
V
V
= 0.5 x V
= 10V
DS
GS
(BR)DSS
2
10
Gate Source Charge
gs
gd
I = 14A
D
2
26
35
Gate Drain Charge
2
V
V
= 100V
=10V
GEN
I = 14A
10
30
Turn–On Delay Time
d(on)
DD
D
2
t
t
t
60
100
80
Rise Time
r
ns
2
R = 7.1Ω
30
Turn–Off Delay Time
d(off)
f
L
2
R = 4.7Ω
40
95
Fall Time
G
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
114
56
Continuous Current
S
A
3
Pulse Current
SM
V
t
I = I
V = 0
GS
2.0
650
V
Forward Voltage
SD
F
S
S
I = I
150
0.5
ns
µC
Reverse Recovery Time
Reverse Recovery Charge
rr
F
Q
dI /dt = 100A/µs
F
rr
1
2
3
Pulse test : Pulse Width < 300µs ,Duty Cycle < 2%
Independent of Operating Temperature
Pulse width Limited by maximum Junction Temperature
THERMAL RESISTANCECHARACTERISTICS
Parameter
Min.
Typ.
Max. Unit
R
R
R
thJC
thJA
thCS
Thermal resistance Junction-Case
Thermal resistance Junction-ambient
Thermal resistance Junction-ambient
2.1
80
K/W
1.0
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. e-mail sales@semelab.co.uk
Prelim. 1/99
Website http://www.semelab.co.uk
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