2N7228 [SEME-LAB]
N–CHANNEL POWER MOSFET; N沟道功率MOSFET
| 型号： | 2N7228 |
| 厂家： | 
SEME LAB |
| 描述： | N–CHANNEL POWER MOSFET |
| 文件： | 总2页 (文件大小：21K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2N7228
MECHANICAL DATA
Dimensions in mm (inches)
N–CHANNEL
POWER MOSFET
13.59 (0.535)
13.84 (0.545)
6.32 (0.249)
6.60 (0.260)
3.53 (0.139)
Dia.
1.02 (0.040)
1.27 (0.050)
3.78 (0.149)
VDSS
500V
12A
ID(cont)
RDS(on)
Ω
0.415
1
2
3
FEATURES
• HERMETICALLY SEALED ISOLATED
PACKAGE
• AVALANCHE ENERGY RATING
• SIMPLE DRIVE REQUIREMENTS
0.89 (0.035)
1.14 (0.045)
3.81 (0.150)
BSC
3.81 (0.150)
BSC
• ALSO AVAILABLE IN A SURFACE
MOUNT PACKAGE
TO–254AA – Metal Package
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
• EASE OF PARALLELING
ABSOLUTE MAXIMUM RATINGS (T
= 25°C unless otherwise stated)
case
V
Gate – Source Voltage
Continuous Drain Current
Continuous Drain Current
±20V
12A
GS
I
I
I
(V = 10V , T
= 25°C)
D
GS
case
(V = 10V , T
= 100°C)
8A
D
GS
case
1
Pulsed Drain Current
48A
DM
P
Power Dissipation @ T = 25°C
case
150W
D
Linear Derating Factor
1.2W/°C
750mJ
12A
2
E
Single Pulse Avalanche Energy
AS
AR
1
I
Avalanche Current
AR
1
E
Repetitive Avalanche Energy
15mJ
3
dv/dt
T , T
Peak Diode Recovery
3.5V/ns
–55 to 150°C
300°C
Operating and Storage Temperature Range
J
stg
1
T
Lead Temperature measured / ” (1.6mm) from case for 10 sec.
L
16
R
R
R
Thermal Resistance Junction to Case
Thermal Resistance Case to Sink (Typical)
Thermal Resistance Junction to Ambient
0.83°C/W
0.21°C/W
48°C/W
θJC
θCS
θJA
Notes
1) Repetitive Rating – Pulse width limited by Maximum Junction Temperature
2) @ V = 50V , L ≥ 9.4mH , R = 25Ω , Peak I = 12A , Starting T = 25°C
DD
G
L
J
3) @ I ≤ 12A , di/dt ≤ 130A/µs , V ≤ BV
, T ≤ 150°C , Suggested R = 2.35Ω
J G
SD
DD
DSS
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
4/99
2N7228
ELECTRICAL CHARACTERISTICS (T
= 25°C unless otherwise stated)
amb
Parameter
Test Conditions
Min.
Typ.
Max. Unit
STATIC ELECTRICAL RATINGS
Drain – Source Breakdown Voltage
Temperature Coefficient of
Breakdown Voltage
BV
V
= 0
I = 1mA
500
V
DSS
GS
D
∆BV
∆T
Reference to 25°C
I = 1mA
DSS
0.68
V/°C
J
D
Static Drain – Source On–State
V
V
V
V
V
= 10V
= 10V
I = 8A
0.415
Ω
GS
GS
DS
DS
GS
D
R
DS(on)
2
Resistance
I = 12A
0.515
D
V
Gate Threshold Voltage
= V
I = 250µA
2
4
V
GS(th)
GS
D
(Ω)
2
g
Forward Transconductance
≥ 15V
I
= 8A
6.5
S(Ω
fs
DS
= 0
V
= 0.8BV
25
250
100
–100
DS
DSS
I
Zero Gate Voltage Drain Current
µA
DSS
T = 125°C
J
I
I
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
V
V
= 20V
GSS
GSS
GS
GS
nA
= –20V
DYNAMIC CHARACTERISTICS
Input Capacitance
C
C
C
C
2700
600
240
12
iss
V
V
= 0
GS
DS
Output Capacitance
oss
rss
DC
= 25V
pF
nC
ns
Reverse Transfer Capacitance
Drain – Case Capacitance
Total Gate Charge
f = 1MHz
Q
Q
Q
V
= 10V
55
5
120
19
g
gs
GS
Gate – Source Charge
Gate – Drain (“Miller”) Charge
Turn– On Delay Time
Rise Time
I = 12A
D
V
= 0.5BV
27
70
gd
DS
DSS
t
t
t
t
35
d(on)
r
V
= 250V
DD
190
170
130
I = 12A
D
Turn–Off Delay Time
Fall Time
d(off)
f
R = 2.35Ω
G
SOURCE – DRAIN DIODE CHARACTERISTICS
I
I
Continuous Source Current
12
48
S
A
V
1
Pulse Source Current
SM
I = 12A
T = 25°C
J
S
2
V
Diode Forward Voltage
1.7
SD
V
= 0
GS
2
t
Reverse Recovery Time
I = 12A
T = 25°C
1600
14
ns
rr
F
J
2
Q
Reverse Recovery Charge
Forward Turn–On Time
d / d ≤ 100A/µs V ≤ 50V
µC
rr
i
t
DD
t
Negligible
on
PACKAGE CHARACTERISTICS
L
L
Internal Drain Inductance Measured from 6mm down drain lead to centre of die
Internal Source Inductance Measured from 6mm down source lead to source bond pad
8.7
8.7
D
nH
S
Notes
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
I Current limited by pin diameter.
*
S
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk
4/99
相关型号：
2N72281N6036
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
MICROSEMI
2N72281N6036A
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
MICROSEMI
2N72281N6036AE3
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
MICROSEMI
2N72281N6036E3
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
MICROSEMI
2N72281N6072
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
MICROSEMI
2N72281N6072A
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
MICROSEMI
2N72281N6072AE3
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
MICROSEMI
2N72281N6072E3
1500 WATT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/507
MICROSEMI
2N7228D
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
2N7228UPBF
Power Field-Effect Transistor, 12A I(D), 500V, 0.515ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
INFINEON
©2020 ICPDF网 联系我们和版权申明