2S322 [SEME-LAB]

Bipolar NPN Device in a Hermetically sealed TO5 Metal Package; 在密封TO5金属封装的双极NPN装置
2S322
型号: 2S322
厂家: SEME LAB    SEME LAB
描述:

Bipolar NPN Device in a Hermetically sealed TO5 Metal Package
在密封TO5金属封装的双极NPN装置

装置
文件: 总1页 (文件大小:14K)
下载:  下载PDF数据表文档文件

2S322A

2S322A

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0 TI

2S323

Bipolar NPN Device in a Hermetically sealed TO5 Metal Package

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17 SEME-LAB

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8 ETC

2S323

Bipolar NPN Device in a Hermetically sealed TO5 Metal Package

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3 SEME-LAB

2S323A

Bipolar NPN Device in a Hermetically sealed TO5

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6 SEME-LAB

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15 ETC

2S3M-AY

Silicon Controlled Rectifier, 4A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3

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0 NEC

2S3M-CY

Silicon Controlled Rectifier, 4A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, PLASTIC PACKAGE-3

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0 NEC

2S3M-YA

Silicon Controlled Rectifier, 4A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-2

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0 NEC

2S3M-YB

Silicon Controlled Rectifier, 4A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3

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0 NEC

2S3M-YC

Silicon Controlled Rectifier, 4A I(T)RMS, 300V V(DRM), 300V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3

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0 NEC

2S4M

THYRISTORS 2 A HIGH-SPEED SWITCHING SCR

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120 NEC

2S4M

THYRISTORS 2 A HIGH-SPEED SWITCHING SCR

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58 NEC

2S4M-AY

Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3

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0 NEC

2S4M-BY

Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, TO-202, PLASTIC PACKAGE-3

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0 NEC