BDS19 [SEME-LAB]

SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES; PNP硅外延基地的TO220金属和SMD1陶瓷表贴封装
BDS19
元器件型号: BDS19
生产厂家: SEME LAB    SEME LAB
描述和应用:

SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES
PNP硅外延基地的TO220金属和SMD1陶瓷表贴封装

晶体晶体管开关局域网
PDF文件: 总3页 (文件大小:73K)
下载文档:  下载PDF数据表文档文件
型号参数:BDS19参数
是否Rohs认证 符合
生命周期Obsolete
IHS 制造商TT ELECTRONICS PLC
包装说明CHIP CARRIER, R-CBCC-N3
Reach Compliance Codecompliant
ECCN代码EAR99
风险等级5.06
其他特性HIGH RELIABILITY
外壳连接COLLECTOR
最大集电极电流 (IC)8 A
集电极-发射极最大电压150 V
配置SINGLE
最小直流电流增益 (hFE)15
JESD-30 代码R-CBCC-N3
元件数量1
端子数量3
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子形式NO LEAD
端子位置BOTTOM
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)30 MHz
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
BDS18 BDS18SMD
BDS19 BDS19SMD
MECHANICAL DATA
Dimensions in mm
1 0.6
0.8
4.6
16.5
3.6
Dia.
1 3 .5
1 0 .6
SILICON PNP
EPITAXIAL BASE IN
TO220 METAL AND
SMD1 CERAMIC SURFACE
MOUNT PACKAGES
FEATURES
1 23
1 3 .7 0
• HERMETIC METAL OR CERAMIC
PACKAGES
1.0
2 .5 4
BSC
2. 70
BSC
• HIGH RELIABILITY
• MILITARY AND SPACE OPTIONS
• SCREENING TO CECC LEVELS
0 .8 9
(0 .0 3 5 )
m in .
3 .7 0 (0 .1 4 6 )
3 .7 0 (0 .1 4 6 )
3 .4 1 (0 .1 3 4 )
3 .4 1 (0 .1 3 4 )
4 .1 4 (0 .1 6 3 )
3 .8 4 (0 .1 5 1 )
3 .6 0 (0 .1 4 2 )
M a x .
• FULLY ISOLATED (METAL VERSION)
1
3
0 .7 6
(0 .0 3 0 )
m in .
1 6 .0 2 (0 .6 3 1 )
1 5 .7 3 (0 .6 1 9 )
APPLICATIONS
• POWER LINEAR AND SWITCHING
APPLICATIONS
• GENERAL PURPOSE POWER
1 0 .6 9 (0 .4 2 1 )
1 0 .3 9 (0 .4 0 9 )
2
9 .6
9 .3
1 1 .5
1 1 .2
7 (0
8 (0
8 (0
8 (0
.3 8
.3 6
.4 5
.4 4
1 )
9 )
6 )
4 )
0 .5 0 (0 .0 2 0 )
0 .2 6 (0 .0 1 0 )
TO220M
SMD1
Pin 1
– Base
- TO220 Metal Package - Isolated
- SMD1 Ceramic Surface Mount Package
Pin 2
– Collector
Pin 3
– Emitter
ABSOLUTE MAXIMUM RATINGS
(T
case
=25°C unless otherwise stated)
V
CBO
V
CEO
V
EBO
I
E
, I
C
I
B
P
tot
T
stg
T
j
Semelab plc.
Collector - Base voltage (I
E
= 0)
Collector - Emitter voltage (I
B
= 0)
Emitter - Base voltage (I
C
= 0)
Emitter , Collector current
Base current
Total power dissipation at T
case
£
75°C
Storage Temperature
Junction Temperature
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
BDS18
–120V
–120V
BDS19
–150V
–150V
–5V
–8A
–2A
50W
–65 TO 200°C
200°C
4/00
BDS18 BDS18SMD
BDS19 BDS19SMD
ELECTRICAL CHARACTERISTICS
(Tcase = 25°C unless otherwise stated)
Parameter
I
CBO
I
CEO
I
EBO
V
CEO(sus)*
V
CE(sat)*
V
BE(on)*
h
FE*
f
T
Collector cut-off current
(I
E
= 0)
Collector cut-off current
(I
B
= 0)
Emitter cut-off current
(I
C
= 0)
Collector - Emitter
sustaining voltage (I
B
= 0)
Collector - Emitter
saturation voltage
Base - Emitter voltage
DC Current gain
Transition frequency
Test Conditions
BDS18
BDS19
BDS18
BDS19
V
EB
= –5V
BDS18
BDS19
I
C
= –1A
I
C
= –1A
I
C
= –0.5A
I
C
= –4A
I
C
= –0.5A
I
C
= –100mA
I
B
= –0.1A
V
CE
= –2V
V
CE
= –2V
V
CE
= –2V
V
CE
= –10V
V
CB
= –120V
V
CB
= –150V
V
CE
= –60V
V
CE
= –75V
Min.
Typ.
Max.
–20
–20
–0.1
–0.1
–10
Unit
m
A
mA
m
A
V
–120
–150
–0.5
–1.0
250
150
V
V
V
40
15
30
MHz
*Pulsed : Pulse duration = 300
m
s , duty cycle = 1.5%
SWITCHING CHARACTERISTICS
Parameter
t
on
t
s
t
f
On Time
Storage Time
Fall Time
(t
d
+ t
r
)
Test Conditions
I
C
= 2A V
CC
= –80V
I
B1
= 0.2A
I
C
= 2A V
CC
= –80V
I
B1
= –I
B2
= 0.2A
Max.
0.5
1.5
0.3
Unit
m
s
m
s
m
s
THERMAL DATA
R
THj-case
R
THj-a
Thermal resistance junction - case
Thermal resistance junction - ambient
Max. 2.5°C/W
Max. 62.5°C/W
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
4/00
BDS18 BDS18SMD
BDS19 BDS19SMD
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
4/00
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