BDS19

更新时间:2025-07-04 02:05:35
品牌:SEME-LAB
描述:SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES

BDS19 概述

SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES PNP硅外延基地的TO220金属和SMD1陶瓷表贴封装 功率双极晶体管

BDS19 规格参数

是否无铅: 含铅是否Rohs认证: 不符合
生命周期:Active零件包装代码:TO-257AB
包装说明:FLANGE MOUNT, S-MSFM-P3针数:3
Reach Compliance Code:compliantECCN代码:EAR99
风险等级:5.04Is Samacsys:N
其他特性:HIGH RELIABILITY外壳连接:ISOLATED
最大集电极电流 (IC):8 A集电极-发射极最大电压:150 V
配置:SINGLE最小直流电流增益 (hFE):15
JEDEC-95代码:TO-257ABJESD-30 代码:S-MSFM-P3
元件数量:1端子数量:3
最高工作温度:200 °C封装主体材料:METAL
封装形状:SQUARE封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):NOT SPECIFIED极性/信道类型:PNP
认证状态:Not Qualified表面贴装:NO
端子形式:PIN/PEG端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIED晶体管应用:SWITCHING
晶体管元件材料:SILICON标称过渡频率 (fT):10 MHz
Base Number Matches:1

BDS19 数据手册

通过下载BDS19数据手册来全面了解它。这个PDF文档包含了所有必要的细节,如产品概述、功能特性、引脚定义、引脚排列图等信息。

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BDS18 BDS18SMD  
BDS19 BDS19SMD  
MECHANICAL DATA  
Dimensions in mm  
SILICON PNP  
EPITAXIAL BASE IN  
TO220 METAL AND  
4.6  
10.6  
0.8  
SMD1 CERAMIC SURFACE  
MOUNT PACKAGES  
3.6  
Dia.  
1 2 3  
FEATURES  
• HERMETIC METAL OR CERAMIC  
PACKAGES  
1.0  
• HIGH RELIABILITY  
2.54  
BSC  
2.70  
BSC  
• MILITARY AND SPACE OPTIONS  
• SCREENING TO CECC LEVELS  
0
.
8
9
(
0
.
0
3
5
)
m
i
n
.
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
.
6
0
(
0
.
1
4
2
)
• FULLY ISOLATED (METAL VERSION)  
M
a
x
.
1
3
APPLICATIONS  
• POWER LINEAR AND SWITCHING  
APPLICATIONS  
2
• GENERAL PURPOSE POWER  
9
9
.
.
6
3
7
8
(
(
0
0
.
.
3
3
8
6
1
9
)
)
0
0
.
.
5
2
0
6
(
(
0
0
.
.
0
0
2
1
0
0
)
)
1
1
1
1
.
.
5
2
8
8
(
(
0
0
.
.
4
4
5
4
6
4
)
)
TO220M  
SMD1  
- TO220 Metal Package - Isolated  
- SMD1 Ceramic Surface Mount Package  
Pin 1 Base  
Pin 2 Collector Pin 3 Emitter  
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)  
BDS18  
–120V  
–120V  
BDS19  
–150V  
–150V  
VCBO  
VCEO  
VEBO  
IE , IC  
IB  
Collector - Base voltage (IE = 0)  
Collector - Emitter voltage (IB = 0)  
Emitter - Base voltage (IC = 0)  
Emitter , Collector current  
Base current  
–5V  
–8A  
–2A  
50W  
Ptot  
Tstg  
Tj  
Total power dissipation at T  
Storage Temperature  
Junction Temperature  
75°C  
case  
–65 TO 200°C  
200°C  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
4/00  
BDS18 BDS18SMD  
BDS19 BDS19SMD  
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Collector cut-off current  
Test Conditions  
Min. Typ. Max. Unit  
BDS18  
BDS19  
BDS18  
BDS19  
VCB = 120V  
VCB = 150V  
VCE = 60V  
VCE = 75V  
20  
ICBO  
A
(IE = 0)  
20  
Collector cut-off current  
0.1  
mA  
ICEO  
(IB = 0)  
0.1  
Emitter cut-off current  
IEBO  
VEB = 5V  
10  
A
(IC = 0)  
Collector - Emitter  
VCEO(sus)*  
BDS18  
120  
150  
V
IC = 100mA  
sustaining voltage (IB = 0) BDS19  
Collector - Emitter  
saturation voltage  
Base - Emitter voltage  
V
V
V
VCE(sat)*  
VBE(on)*  
hFE*  
IC = 1A  
IB = 0.1A  
VCE = 2V  
0.5  
IC = 1A  
1.0  
250  
150  
IC = 0.5A VCE = 2V  
IC = 4A VCE = 2V  
IC = 0.5A VCE = 10V  
40  
15  
30  
DC Current gain  
fT  
Transition frequency  
MHz  
*Pulsed : Pulse duration = 300 s , duty cycle = 1.5%  
SWITCHING CHARACTERISTICS  
Parameter  
Test Conditions  
IC = 2A VCC = 80V  
Max.  
Unit  
ton  
On Time  
(td + tr)  
0.5  
s
IB1 = 0.2A  
ts  
tf  
Storage Time  
Fall Time  
IC = 2A VCC = 80V  
IB1 = IB2 = 0.2A  
1.5  
0.3  
s
s
THERMAL DATA  
RTHj-case  
Thermal resistance junction - case  
Thermal resistance junction - ambient  
Max. 2.5°C/W  
RTHj-a  
Max. 62.5°C/W  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
4/00  
BDS18 BDS18SMD  
BDS19 BDS19SMD  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
4/00  

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