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BDS19

更新时间：2025-07-16 02:05:35
品牌：SEME-LAB
描述：SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES

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中文翻译

免费 PCB/SMT

BDS19 概述

SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES PNP硅外延基地的TO220金属和SMD1陶瓷表贴封装 功率双极晶体管

BDS19 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-257AB
包装说明：FLANGE MOUNT, S-MSFM-P3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.04Is Samacsys：N
其他特性：HIGH RELIABILITY外壳连接：ISOLATED
最大集电极电流 (IC)：8 A集电极-发射极最大电压：150 V
配置：SINGLE最小直流电流增益 (hFE)：15
JEDEC-95代码：TO-257ABJESD-30 代码：S-MSFM-P3
元件数量：1端子数量：3
最高工作温度：200 °C封装主体材料：METAL
封装形状：SQUARE封装形式：FLANGE MOUNT
峰值回流温度（摄氏度）：NOT SPECIFIED极性/信道类型：PNP
认证状态：Not Qualified表面贴装：NO
端子形式：PIN/PEG端子位置：SINGLE
处于峰值回流温度下的最长时间：NOT SPECIFIED晶体管应用：SWITCHING
晶体管元件材料：SILICON标称过渡频率 (fT)：10 MHz
Base Number Matches：1

BDS19 数据手册

通过下载BDS19数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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BDS18 BDS18SMD  
BDS19 BDS19SMD  
MECHANICAL DATA  
Dimensions in mm  
SILICON PNP  
EPITAXIAL BASE IN  
TO220 METAL AND  
4.6  
10.6  
0.8  
SMD1 CERAMIC SURFACE  
MOUNT PACKAGES  
3.6  
Dia.  
1 2 3  
FEATURES  
• HERMETIC METAL OR CERAMIC  
PACKAGES  
1.0  
• HIGH RELIABILITY  
2.54  
BSC  
2.70  
BSC  
• MILITARY AND SPACE OPTIONS  
• SCREENING TO CECC LEVELS  
0
.
8
9
(
0
.
0
3
5
)
m
i
n
.
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
.
6
0
(
0
.
1
4
2
)
• FULLY ISOLATED (METAL VERSION)  
M
a
x
.
1
3
APPLICATIONS  
• POWER LINEAR AND SWITCHING  
APPLICATIONS  
2
• GENERAL PURPOSE POWER  
9
9
.
.
6
3
7
8
(
(
0
0
.
.
3
3
8
6
1
9
)
)
0
0
.
.
5
2
0
6
(
(
0
0
.
.
0
0
2
1
0
0
)
)
1
1
1
1
.
.
5
2
8
8
(
(
0
0
.
.
4
4
5
4
6
4
)
)
TO220M  
SMD1  
- TO220 Metal Package - Isolated  
- SMD1 Ceramic Surface Mount Package  
Pin 1 – Base  
Pin 2 – Collector Pin 3 – Emitter  
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)  
BDS18  
–120V  
–120V  
BDS19  
–150V  
–150V  
VCBO  
VCEO  
VEBO  
IE , IC  
IB  
Collector - Base voltage (IE = 0)  
Collector - Emitter voltage (IB = 0)  
Emitter - Base voltage (IC = 0)  
Emitter , Collector current  
Base current  
–5V  
–8A  
–2A  
50W  
Ptot  
Tstg  
Tj  
Total power dissipation at T  
Storage Temperature  
Junction Temperature  
75°C  
case  
–65 TO 200°C  
200°C  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
4/00  
BDS18 BDS18SMD  
BDS19 BDS19SMD  
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Collector cut-off current  
Test Conditions  
Min. Typ. Max. Unit  
BDS18  
BDS19  
BDS18  
BDS19  
VCB = –120V  
VCB = –150V  
VCE = –60V  
VCE = –75V  
–20  
ICBO  
A
(IE = 0)  
–20  
Collector cut-off current  
–0.1  
mA  
ICEO  
(IB = 0)  
–0.1  
Emitter cut-off current  
IEBO  
VEB = –5V  
–10  
A
(IC = 0)  
Collector - Emitter  
VCEO(sus)*  
BDS18  
–120  
–150  
V
IC = –100mA  
sustaining voltage (IB = 0) BDS19  
Collector - Emitter  
saturation voltage  
Base - Emitter voltage  
V
V
V
VCE(sat)*  
VBE(on)*  
hFE*  
IC = –1A  
IB = –0.1A  
VCE = –2V  
–0.5  
IC = –1A  
–1.0  
250  
150  
IC = –0.5A VCE = –2V  
IC = –4A VCE = –2V  
IC = –0.5A VCE = –10V  
40  
15  
30  
DC Current gain  
fT  
Transition frequency  
MHz  
*Pulsed : Pulse duration = 300 s , duty cycle = 1.5%  
SWITCHING CHARACTERISTICS  
Parameter  
Test Conditions  
IC = 2A VCC = –80V  
Max.  
Unit  
ton  
On Time  
(td + tr)  
0.5  
s
IB1 = 0.2A  
ts  
tf  
Storage Time  
Fall Time  
IC = 2A VCC = –80V  
IB1 = –IB2 = 0.2A  
1.5  
0.3  
s
s
THERMAL DATA  
RTHj-case  
Thermal resistance junction - case  
Thermal resistance junction - ambient  
Max. 2.5°C/W  
RTHj-a  
Max. 62.5°C/W  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
4/00  
BDS18 BDS18SMD  
BDS19 BDS19SMD  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
4/00  

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