BDS19SMD05 [SEME-LAB]

SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

BDS19SMD05

•

•

•

High Voltage

Hermetic Ceramic Surface Mount Package

Ideally suited for Power Linear, Switching

and general Purpose Applications

Screening Options Available

•

ABSOLUTE MAXIMUM RATINGS

(TC = 25°C unless otherwise stated)

VCBO

VCEO

VEBO

IC

IB

PD

TJ

Tstg

Collector – Base Voltage

Collector – Emitter Voltage

Emitter – Base Voltage

Continuous Collector Current

Base Current

TC

≤

75°C

Total Power Dissipation at

Derate Above 75°C

Junction Temperature Range

Storage Temperature Range

-150V

-150V

-5V

-8A

-2A

80W

0.64W/°C

-65 to +200°C

-65 to +200°C

THERMAL PROPERTIES

Symbols

R

θJC

Parameters

Thermal Resistance, Junction To Case

Max.

1.56

Units

°C/W

** This datasheet supersedes document 3346

Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.

Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However

Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to

verify that datasheets are current before placing orders.

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Document Number 8672

Issue 1

Page 1 of 3

Website:

http://www.semelab-tt.com

SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

BDS19SMD05

ELECTRICAL CHARACTERISTICS

(TC = 25°C unless otherwise stated)

Symbols

V(BR)CEO

ICEO

ICBO

IEBO

hFE

(1)

(1)

Parameters

Collector-Emitter

Breakdown Voltage

Collector Cut-Off Current

Collector Cut-Off Current

Emitter Cut-Off Current

Forward-current transfer

ratio

Test Conditions

IC = -10mA

VCE = -75V

VCB = -150V

VEB = -5V

IC = -0.5A

IC = -4A

IC = -0.5A

IC = -4A

IC = -1.0A

IB = 0

IB = 0

IE = 0

IC = 0

VCE = -2V

VCE = -2V

IB = -0.05A

IB = -0.4A

VCE = -2V

Min.

-150

Typ

Max.

Units

V

-0.1

-20

-10

40

15

250

150

-0.4

-1.5

-1.4

mA

µA

VCE(sat)

VBE(on)

(1)

Collector-Emitter Saturation

Voltage

Base-Emitter Voltage

V

(1)

DYNAMIC CHARACTERISTICS

fT

Transition Frequency

IC = -0.5A

f = 5MHz

Turn-On Time

Storage Time

Fall Time

IC = -2A

IB1 = -0.2A

IC = -2A

VCC = -80V

VCC = -80V

0.5

µs

1.5

0.3

VCE = -4V

10

MHz

ton

ts

tf

IB1 = - IB2 = -0.2A

Notes

(1) Pulse Width

≤

300us,

δ ≤

2%

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Website:

http://www.semelab-tt.com

Document Number 8672

Issue 1

Page 2 of 3

SILICON PLANAR EPITAXIAL

PNP TRANSISTOR

BDS19SMD05

MECHANICAL DATA

Dimensions in mm (inches)

7.54 (0.296)

0.76 (0.030)

min.

2.41 (0.095)

2.41 (0.095)

0.127 (0.005)

3.175 (0.125)

Max.

3.05 (0.120)

1

3

10.16 (0.400)

0.76

(0.030)

min.

5.72 (.225)

2

0.127 (0.005)

16 PLCS

0.50(0.020)

7.26 (0.286)

0.127 (0.005)

0.50 (0.020)

max.

SMD05 (TO-276AA)

Underside View

Pad 1 – Base

Pad 2 – Collector

Pad 3 - Emitter

Semelab Limited

Coventry Road, Lutterworth, Leicestershire, LE17 4JB

Telephone +44 (0) 1455 556565

Fax +44 (0) 1455 552612

Email:

sales@semelab-tt.com

Website:

http://www.semelab-tt.com

Document Number 8672

Issue 1

Page 3 of 3