BDS19SMD05 [SEME-LAB]

SILICON PLANAR EPITAXIAL PNP TRANSISTOR; 硅平面外延PNP晶体管
BDS19SMD05
元器件型号: BDS19SMD05
生产厂家: SEME LAB    SEME LAB
描述和应用:

SILICON PLANAR EPITAXIAL PNP TRANSISTOR
硅平面外延PNP晶体管

晶体晶体管开关局域网
PDF文件: 总3页 (文件大小:348K)
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型号参数:BDS19SMD05参数
是否Rohs认证 不符合
生命周期Active
包装说明HERMETIC SEALED, CERAMIC, SMD05, 3 PIN
Reach Compliance Codecompliant
ECCN代码EAR99
风险等级5.69
其他特性HIGH RELIABILITY
外壳连接COLLECTOR
最大集电极电流 (IC)8 A
集电极-发射极最大电压150 V
配置SINGLE
最小直流电流增益 (hFE)15
JEDEC-95代码TO-276AA
JESD-30 代码R-CBCC-N3
元件数量1
端子数量3
最高工作温度200 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型PNP
认证状态Not Qualified
表面贴装YES
端子形式NO LEAD
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)10 MHz
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS19SMD05
High Voltage
Hermetic Ceramic Surface Mount Package
Ideally suited for Power Linear, Switching
and general Purpose Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC
75°C
Total Power Dissipation at
Derate Above 75°C
Junction Temperature Range
Storage Temperature Range
-150V
-150V
-5V
-8A
-2A
80W
0.64W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Max.
1.56
Units
°C/W
** This datasheet supersedes document 3346
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8672
Issue 1
Page 1 of 3
Website:
http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS19SMD05
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
V(BR)CEO
ICEO
ICBO
IEBO
hFE
(1)
(1)
Parameters
Collector-Emitter
Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
Forward-current transfer
ratio
Test Conditions
IC = -10mA
VCE = -75V
VCB = -150V
VEB = -5V
IC = -0.5A
IC = -4A
IC = -0.5A
IC = -4A
IC = -1.0A
IB = 0
IB = 0
IE = 0
IC = 0
VCE = -2V
VCE = -2V
IB = -0.05A
IB = -0.4A
VCE = -2V
Min.
-150
Typ
Max.
Units
V
-0.1
-20
-10
40
15
250
150
-0.4
-1.5
-1.4
mA
µA
VCE(sat)
VBE(on)
(1)
Collector-Emitter Saturation
Voltage
Base-Emitter Voltage
V
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = -0.5A
f = 5MHz
Turn-On Time
Storage Time
Fall Time
IC = -2A
IB1 = -0.2A
IC = -2A
VCC = -80V
VCC = -80V
0.5
µs
1.5
0.3
VCE = -4V
10
MHz
ton
ts
tf
IB1 = - IB2 = -0.2A
Notes
(1) Pulse Width
300us,
δ ≤
2%
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8672
Issue 1
Page 2 of 3
SILICON PLANAR EPITAXIAL
PNP TRANSISTOR
BDS19SMD05
MECHANICAL DATA
Dimensions in mm (inches)
7.54 (0.296)
0.76 (0.030)
min.
2.41 (0.095)
2.41 (0.095)
0.127 (0.005)
3.175 (0.125)
Max.
3.05 (0.120)
1
3
10.16 (0.400)
0.76
(0.030)
min.
5.72 (.225)
2
0.127 (0.005)
16 PLCS
0.50(0.020)
7.26 (0.286)
0.127 (0.005)
0.50 (0.020)
max.
SMD05 (TO-276AA)
Underside View
Pad 1 – Base
Pad 2 – Collector
Pad 3 - Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8672
Issue 1
Page 3 of 3
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