BDS20SMD [SEME-LAB]

SILICON EPIBASE NPN DARLINGTON TRANSISTOR; 硅NPN EPIBASE达林顿晶体管
BDS20SMD
元器件型号: BDS20SMD
生产厂家: SEME LAB    SEME LAB
描述和应用:

SILICON EPIBASE NPN DARLINGTON TRANSISTOR
硅NPN EPIBASE达林顿晶体管

晶体晶体管达林顿晶体管开关
PDF文件: 总2页 (文件大小:453K)
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型号参数:BDS20SMD参数
是否无铅含铅
是否Rohs认证符合
生命周期Active
IHS 制造商SEMELAB LTD
零件包装代码TO-276AB
包装说明CHIP CARRIER, R-CBCC-N3
针数3
Reach Compliance Codecompliant
ECCN代码EAR99
风险等级5.63
Is SamacsysN
其他特性HIGH RELIABILITY
外壳连接COLLECTOR
最大集电极电流 (IC)5 A
集电极-发射极最大电压80 V
配置DARLINGTON
最小直流电流增益 (hFE)1000
JEDEC-95代码TO-276AB
JESD-30 代码R-CBCC-N3
元件数量1
端子数量3
最高工作温度200 °C
封装主体材料CERAMIC, METAL-SEALED COFIRED
封装形状RECTANGULAR
封装形式CHIP CARRIER
峰值回流温度(摄氏度)NOT SPECIFIED
极性/信道类型NPN
认证状态Not Qualified
表面贴装YES
端子形式NO LEAD
端子位置BOTTOM
处于峰值回流温度下的最长时间NOT SPECIFIED
晶体管应用SWITCHING
晶体管元件材料SILICON
标称过渡频率 (fT)8 MHz
Base Number Matches1
MAX34334CSE前5页PDF页面详情预览
SILICON EPIBASE NPN
DARLINGTON TRANSISTOR
BDS20SMD
High DC Current Gain
Hermetic Ceramic Surface Mount Package
Designed For General Purpose Amplifiers and
Low Speed Switching Applications
Screening Options Available
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
80V
80V
5V
5A
0.1A
35W
0.2W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
5
Units
°C/W
** This datasheet supersedes document 7603
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8217
Issue 1
Page 1 of 2
Website:
http://www.semelab-tt.com
SILICON EPIBASE NPN
DARLINGTON TRANSISTOR
BDS20SMD
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICBO
Parameters
Collector-Cut-Off Current
Test Conditions
VCB = 80V
VCB = 60V
IE = 0
IE = 0
TC = 150°C
Min.
Typ
Max.
0.2
1.0
0.5
2
Units
mA
ICEO
IEBO
hFE
(1)
Collector-Cut-Off Current
Emitter-Cut-Off Current
Forward-current transfer
ratio
(1)
VCE = 40V
VEB = 5V
IC = 0.5A
IC = 3A
IC = 3A
IC = 5A
IC = 5A
IC = 3A
IB = 0
IC = 0
VCE = 3V
VCE = 3V
IB = 12mA
IB = 20mA
IB = 20mA
VCE = 3V
1000
1000
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter On Voltage
2
4
V
2.8
3.5
(1)
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 0.5A
f = 2MHz
VCE = 4V
8
MHz
Notes
(1) Pulse Width
300us,
δ ≤
2%
MECHANICAL DATA
Dimensions in mm (inches)
4.14 (0.163)
3.84 (0.151)
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
3.60 (0.142)
Max.
1
3
0.76
(0.030)
min.
10.69 (0.421)
10.39 (0.409)
2
SMD1 (TO-276AB)
Underside View
Pad 1 – Base
Pad 2 – Collector
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
Pad 3 - Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8217
Issue 1
Page 2 of 2
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