BDS20SMD [SEME-LAB]
SILICON EPIBASE NPN DARLINGTON TRANSISTOR; 硅NPN EPIBASE达林顿晶体管
| 元器件型号： | BDS20SMD |
| 生产厂家： | 
SEME LAB
|
| 描述和应用： | SILICON EPIBASE NPN DARLINGTON TRANSISTOR |
| PDF文件： | 总2页 (文件大小：453K) |
| 下载文档： | 下载PDF数据表文档文件 |
| 型号参数：BDS20SMD参数 | |
| 是否无铅 | 含铅 |
| 是否Rohs认证 | 符合 |
| 生命周期 | Active |
| IHS 制造商 | SEMELAB LTD |
| 零件包装代码 | TO-276AB |
| 包装说明 | CHIP CARRIER, R-CBCC-N3 |
| 针数 | 3 |
| Reach Compliance Code | compliant |
| ECCN代码 | EAR99 |
| 风险等级 | 5.63 |
| Is Samacsys | N |
| 其他特性 | HIGH RELIABILITY |
| 外壳连接 | COLLECTOR |
| 最大集电极电流 (IC) | 5 A |
| 集电极-发射极最大电压 | 80 V |
| 配置 | DARLINGTON |
| 最小直流电流增益 (hFE) | 1000 |
| JEDEC-95代码 | TO-276AB |
| JESD-30 代码 | R-CBCC-N3 |
| 元件数量 | 1 |
| 端子数量 | 3 |
| 最高工作温度 | 200 °C |
| 封装主体材料 | CERAMIC, METAL-SEALED COFIRED |
| 封装形状 | RECTANGULAR |
| 封装形式 | CHIP CARRIER |
| 峰值回流温度（摄氏度） | NOT SPECIFIED |
| 极性/信道类型 | NPN |
| 认证状态 | Not Qualified |
| 表面贴装 | YES |
| 端子形式 | NO LEAD |
| 端子位置 | BOTTOM |
| 处于峰值回流温度下的最长时间 | NOT SPECIFIED |
| 晶体管应用 | SWITCHING |
| 晶体管元件材料 | SILICON |
| 标称过渡频率 (fT) | 8 MHz |
| Base Number Matches | 1 |
MAX34334CSE前5页PDF页面详情预览
SILICON EPIBASE NPN
DARLINGTON TRANSISTOR
BDS20SMD
•
•
•
High DC Current Gain
Hermetic Ceramic Surface Mount Package
Designed For General Purpose Amplifiers and
Low Speed Switching Applications
Screening Options Available
•
ABSOLUTE MAXIMUM RATINGS
(TC = 25°C unless otherwise stated)
VCBO
VCEO
VEBO
IC
IB
PD
TJ
Tstg
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
Continuous Collector Current
Base Current
TC = 25°C
Total Power Dissipation at
Derate Above 25°C
Junction Temperature Range
Storage Temperature Range
80V
80V
5V
5A
0.1A
35W
0.2W/°C
-65 to +200°C
-65 to +200°C
THERMAL PROPERTIES
Symbols
R
θJC
Parameters
Thermal Resistance, Junction To Case
Min.
Typ.
Max.
5
Units
°C/W
** This datasheet supersedes document 7603
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Document Number 8217
Issue 1
Page 1 of 2
Website:
http://www.semelab-tt.com
SILICON EPIBASE NPN
DARLINGTON TRANSISTOR
BDS20SMD
ELECTRICAL CHARACTERISTICS
(TC = 25°C unless otherwise stated)
Symbols
ICBO
Parameters
Collector-Cut-Off Current
Test Conditions
VCB = 80V
VCB = 60V
IE = 0
IE = 0
TC = 150°C
Min.
Typ
Max.
0.2
1.0
0.5
2
Units
mA
ICEO
IEBO
hFE
(1)
Collector-Cut-Off Current
Emitter-Cut-Off Current
Forward-current transfer
ratio
(1)
VCE = 40V
VEB = 5V
IC = 0.5A
IC = 3A
IC = 3A
IC = 5A
IC = 5A
IC = 3A
IB = 0
IC = 0
VCE = 3V
VCE = 3V
IB = 12mA
IB = 20mA
IB = 20mA
VCE = 3V
1000
1000
VCE(sat)
VBE(sat)
VBE(on)
Collector-Emitter Saturation
Voltage
Base-Emitter Saturation
Voltage
Base-Emitter On Voltage
2
4
V
2.8
3.5
(1)
(1)
DYNAMIC CHARACTERISTICS
fT
Transition Frequency
IC = 0.5A
f = 2MHz
VCE = 4V
8
MHz
Notes
(1) Pulse Width
≤
300us,
δ ≤
2%
MECHANICAL DATA
Dimensions in mm (inches)
4.14 (0.163)
3.84 (0.151)
0.89
(0.035)
min.
3.70 (0.146)
3.41 (0.134)
3.70 (0.146)
3.41 (0.134)
3.60 (0.142)
Max.
1
3
0.76
(0.030)
min.
10.69 (0.421)
10.39 (0.409)
2
SMD1 (TO-276AB)
Underside View
Pad 1 – Base
Pad 2 – Collector
9.67 (0.381)
9.38 (0.369)
11.58 (0.456)
11.28 (0.444)
16.02 (0.631)
15.73 (0.619)
0.50 (0.020)
0.26 (0.010)
Pad 3 - Emitter
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565
Fax +44 (0) 1455 552612
Email:
sales@semelab-tt.com
Website:
http://www.semelab-tt.com
Document Number 8217
Issue 1
Page 2 of 2
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