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BDS21

更新时间：2025-07-03 02:05:35
品牌：SEME-LAB
描述：SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES

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中文翻译

免费 PCB/SMT

BDS21 概述

SILICON PNP EPITAXIAL BASE IN TO220 METAL AND SMD1 CERAMIC SURFACE MOUNT PACKAGES PNP硅外延基地的TO220金属和SMD1陶瓷表贴封装 功率双极晶体管

BDS21 规格参数

是否无铅： 含铅是否Rohs认证： 不符合
生命周期：Active零件包装代码：TO-257AB
包装说明：FLANGE MOUNT, S-MSFM-P3针数：3
Reach Compliance Code：compliantECCN代码：EAR99
风险等级：5.14其他特性：HIGH RELIABILITY
外壳连接：ISOLATED最大集电极电流 (IC)：5 A
集电极-发射极最大电压：80 V配置：DARLINGTON
最小直流电流增益 (hFE)：1000JEDEC-95代码：TO-257AB
JESD-30 代码：S-MSFM-P3元件数量：1
端子数量：3最高工作温度：200 °C
封装主体材料：METAL封装形状：SQUARE
封装形式：FLANGE MOUNT峰值回流温度（摄氏度）：NOT SPECIFIED
极性/信道类型：PNP认证状态：Not Qualified
表面贴装：NO端子形式：PIN/PEG
端子位置：SINGLE处于峰值回流温度下的最长时间：NOT SPECIFIED
晶体管应用：SWITCHING晶体管元件材料：SILICON
标称过渡频率 (fT)：8 MHzBase Number Matches：1

BDS21 数据手册

通过下载BDS21数据手册来全面了解它。这个PDF文档包含了所有必要的细节，如产品概述、功能特性、引脚定义、引脚排列图等信息。

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BDS20 BDS20SMD  
BDS21 BDS21SMD  
MECHANICAL DATA  
Dimensions in mm  
SILICON PNP  
EPITAXIAL BASE IN  
TO220 METAL AND  
4.6  
10.6  
0.8  
SMD1 CERAMIC SURFACE  
MOUNT PACKAGES  
3.6  
Dia.  
1 2 3  
FEATURES  
• HERMETIC METAL OR CERAMIC PACKAGES  
• HIGH RELIABILITY  
1.0  
• MILITARY AND SPACE OPTIONS  
• SCREENING TO CECC LEVELS  
• FULLY ISOLATED (METAL VERSION)  
2.54  
BSC  
2.70  
BSC  
0
.
8
9
(
0
.
0
3
5
)
m
i
n
.
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
3
.
.
7
4
0
1
(
(
0
0
.
.
1
1
4
3
6
4
)
)
3
.
6
0
(
0
.
1
4
2
)
M
a
x
.
1
3
APPLICATIONS  
• POWER LINEAR AND SWITCHING  
APPLICATIONS  
2
• GENERAL PURPOSE POWER  
9
9
.
.
6
3
7
8
(
(
0
0
.
.
3
3
8
6
1
9
)
)
0
0
.
.
5
2
0
6
(
(
0
0
.
.
0
0
2
1
0
0
)
)
1
1
1
1
.
.
5
2
8
8
(
(
0
0
.
.
4
4
5
4
6
4
)
)
TO220M  
SMD1  
- TO220 Metal Package - Isolated  
- Ceramic Surface Mount Package  
Pin 1 – Base  
Pin 2 – Collector  
Pin 3 – Emitter  
BDS20  
NPN  
80V  
80V  
5V  
BDS21  
PNP  
–80V  
–80V  
–5V  
ABSOLUTE MAXIMUM RATINGS (Tcase=25°C unless otherwise stated)  
VCBO  
VCEO  
VEBO  
IC(PK)  
IB  
Collector - Base voltage (IE = 0)  
Collector - Emitter voltage (IB = 0)  
Emitter - Base voltage (IC = 0)  
Peak collector current  
5A  
0.1A  
–5A  
–0.1A  
Base current  
Ptot  
Tstg  
Tj  
Total power dissipation at T  
Storage Temperature  
Junction Temperature  
75°C  
50W  
–65 to 200°C  
200°C  
case  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 7/00  
BDS20 BDS20SMD  
BDS21 BDS21SMD  
ELECTRICAL CHARACTERISTICS (T  
= 25°C unless otherwise stated)  
case  
Parameter  
Test Conditions  
Min. Typ. Max. Unit  
Collector cut-off current  
ICBO  
VCB = 80V  
VCE = 40V  
VEB = 5V  
0.2  
0.5  
2
mA  
mA  
mA  
V
(IE = 0)  
Collector cut-off current  
ICEO  
(IB = 0)  
Emitter cut-off current  
IEBO  
(IC = 0)  
Collector - Emitter  
VCEO(sus)*  
IC = 30mA  
120  
sustaining voltage (IB = 0)  
Collector - Emitter  
VCE(sat)*  
IC = 3A  
IC = 5A  
IC = 3A  
IB = 12mA  
IB = 20mA  
VCE = 3V  
2
4
V
V
saturation voltage  
VBE(on)*  
hFE*  
Base - Emitter voltage  
2.5  
IC = 0.5A VCE = 3V  
IC = 3A VCE = 3V  
1000  
1000  
DC Current gain  
*Pulsed : Pulse duration = 300 s , duty cycle = 1.5%  
THERMAL DATA  
RTHj-case  
RTHj-a  
Thermal resistance junction - case  
Thermal resistance junction - ambient  
Max. 2.5°C/W  
Max. 62.5°C/W  
Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612.  
E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk  
Prelim. 7/00  

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