BSS71 [SEME-LAB]
SILICON PLANAR EPITAXIAL NPN TRANSISTOR; 硅平面外延NPN晶体管
| 型号： | BSS71 |
| 厂家： | 
SEME LAB |
| 描述： | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |
| 文件： | 总3页 (文件大小：234K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
•
•
•
High Voltage
Hermetic TO-18 Metal package.
Ideally suited for High Voltage Amplifier
and Switching Applications
•
Screening Options Available
ABSOLUTE MAXIMUM RATINGS (T = 25°C unless otherwise stated)
A
V
V
V
I
Collector – Base Voltage
Collector – Emitter Voltage
Emitter – Base Voltage
200V
CBO
CEO
EBO
200V
6V
Continuous Collector Current
Total Power Dissipation at
500mA
C
P
T = 25°C
A
500mW
D
Derate Above 25°C
2.86mW/°C
-65 to +200°C
-65 to +200°C
T
T
Junction Temperature Range
Storage Temperature Range
J
stg
THERMAL PROPERTIES
Symbols
Parameters
Min.
Typ. Max. Units
R
Thermal Resistance, Junction To Ambient
350
°C/W
θJA
Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice.
Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However
Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to
verify that datasheets are current before placing orders.
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8576
Issue 1
Page 1 of 3
Website: http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
ELECTRICAL CHARACTERISTICS (T = 25°C unless otherwise stated)
A
Symbols
Parameters
Test Conditions
Min. Typ
Max. Units
(1)
Collector-Emitter
Breakdown Voltage
Collector-Base
V
I
I
= 10mA
= 100µA
I = 0
B
200
(BR)CEO
C
C
V
I = 0
E
V
200
6
(BR)CBO
Breakdown Voltage
Emitter-Base Breakdown
Voltage
V
I = 100µA
I = 0
C
(BR)EBO
E
I
V
V
V
I
= 150V
= 150V
= 5V
I = 0
E
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
CBO
CB
CE
EB
I
I = 0
B
nA
500
50
CEO
I
I = 0
C
EBO
= 0.1mA
= 1.0mA
= 10mA
= 30mA
= 10mA
= 30mA
= 50mA
= 10mA
= 30mA
= 50mA
V
V
V
V
= 1.0V
20
30
50
40
C
CE
CE
CE
CE
I
I
I
I
I
I
I
I
I
= 10V
= 10V
= 10V
C
C
C
C
C
C
C
C
C
(1)
Forward-current transfer
ratio
h
FE
250
0.3
0.4
0.5
0.8
0.9
1.0
I = 1.0mA
B
(1)
Collector-Emitter Saturation
Voltage
V
I = 3mA
B
CE(sat)
I = 5mA
B
V
I = 1.0mA
B
(1)
Base-Emitter Saturation
Voltage
V
I = 3mA
B
BE(sat)
I = 5mA
B
DYNAMIC CHARACTERISTICS
I
= 20mA
V
= 20V
C
CE
f
Transition Frequency
Output Capacitance
Input Capacitance
Turn-On Time
50
200
MHz
pF
T
f = 20MHz
= 20V
V
I = 0
E
CB
f = 1.0MHz
= 0.5V
C
C
t
3.5
45
obo
ibo
V
I = 0
C
EB
f = 1.0MHz
I
I
I
I
= 50mA
= 10mA
V
= 100V
C
CC
CC
100
400
on
B1
ns
= 50mA
V
= 100V
C
t
Turn-Off Time
off
= - I = 10mA
B2
B1
Notes
(1) Pulse Width ≤ 300us, δ ≤ 2%
Semelab Limited
Telephone +44 (0) 1455 556565
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Fax +44 (0) 1455 552612
Document Number 8576
Issue 1
Page 2 of 3
Email: sales@semelab-tt.com
Website: http://www.semelab-tt.com
SILICON PLANAR EPITAXIAL
NPN TRANSISTOR
BSS71
MECHANICAL DATA
Dimensions in mm (inches)
5.84 (0.230)
5.31 (0.209)
4.95 (0.195)
4.52 (0.178)
0.48 (0.019)
0.41 (0.016)
dia.
2.54 (0.100)
Nom.
3
1
2
TO-18 (TO-206AA) METAL PACKAGE
Underside View
Pin 1 - Emitter
Pin 2 - Base
Pin 3 - Collector
Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8576
Issue 1
Page 3 of 3
Website: http://www.semelab-tt.com
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